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Hydrogel nanophotonic devices exhibit attractive tunable capabilities in structural coloration and optical display. However, current hydrogel‐based tunable strategies are mostly based on a single physical mechanism, and it remains a challenge to merge multiple mechanisms for active devices with integrated functionalities. Here, a hydrogel metagrating combining Fabry‐Pérot (FP) resonance and diffraction effects is proposed for achieving tunable absorption and dynamic wavelength‐selective beam steering. Through exploiting hydrogel shrinkage under electron‐beam exposure, a hydrogel nanocavity composed of Ag/Hydrogel/Ag three‐layer films can be directly printed with arbitrary patterns, enabling the direct‐pattering technique of metagrating. The hydrogel nanocavity performs as an FP‐type absorber, and its absorption peak rapidly shifts with humidity variation due to the hydrogel layer scaling. The response speed is <320 ms, and the absorption peak shift range is >150 nm. It is further demonstrated that the hydrogel metagrating exclusively deflects light at the resonance wavelength, and its operating wavelength can be actively switched by regulating ambient humidity. The proposed tunable hydrogel metagrating can promote new technologies of tunable metasurfaces for optical filtering, gas sensing, and optical imaging. [ABSTRACT FROM AUTHOR]

Tin sulfide semiconductor nanowires (NWs) have been widely investigated for photodetection applications because of their good optical and electrical properties. Herein, we synthesized n-type SnS2 NWs and then fabricated SnS2 NW photodetectors with a ferroelectric polymer side-gate. The strong electric field induced by ferroelectric polymer can effectively suppress the dark current and improve the detectivity in SnS2 NW photodetectors. The photodetectors after polarization depletion exhibit a high photoconductive gain of 4.0 × 105 and a high responsivity of 2.1 × 105 A W−1. Compared with devices without polarization depletion, the detectivity of polarization-depleted photodetectors is improved by at least two orders of magnitude, and the highest detectivity is 1.3 × 1016 Jones. Further, the rise and fall time are 56 and 91 ms respectively, which are about tens of times faster than those without polarization depletion. The device also shows a good spectral response from ultraviolet to near-infrared. This study demonstrates that ferroelectric materials can enhance optoelectronic properties of low-dimensional semiconductors for high-performance photodetectors.

For low temperature (≤180 °C) processed perovskite solar cells (PSCs), SnO2 has been proven to be one of the most effective electron transporting layer. However, problems, such as poor electric conductivity and high defect density, inevitably exist in the SnO2 films which are fabricated using low temperature solution methods. Element doping of SnO2 film is a feasible strategy to alleviate the above problems. Herein, W doping of the SnO2 is realized through addition of ammonium tungstate hydrate into the molecular precursor of SnO2. The W doped SnO2 film exhibits higher conductivity, and can better extract and transport the electrons from the perovskite films. Hence, power conversion efficiency is boosted from 20.60 % for the reference PSCs to 21.83 % for PSCs fabricated on 2.5 mg mL−1 ammonium tungstate hydrate doped SnO2 films. [ABSTRACT FROM AUTHOR]

In recent years, 2D layered materials have been considered as promising photon absorption channel media for next-generation phototransistors due to their atomic thickness, easily tailored single-crystal van der Waals heterostructures, ultrafast optoelectronic characteristics, and broadband photon absorption. However, the photosensitivity obtained from such devices, even under a large bias voltage, is still unsatisfactory until now. In this paper, high-sensitivity phototransistors based on WS2 and MoS2 are proposed, designed, and fabricated with gold nanoparticles (AuNPs) embedded in the gate dielectric. These AuNPs, located between the tunneling and blocking dielectric, are found to enable efficient electron trapping in order to strongly suppress dark current. Ultralow dark current (10−11 A), high photoresponsivity (1090 A W−1), and high detectivity (3.5 × 1011 Jones) are obtained for the WS2 devices under a low source/drain and a zero gate voltage at a wavelength of 520 nm. These results demonstrate that the floating-gate memory structure is an effective configuration to achieve high-performance 2D electronic/optoelectronic devices. [ABSTRACT FROM AUTHOR]

In recent years, 2D layered materials have been considered as promising photon absorption channel media for next-generation phototransistors due to their atomic thickness, easily tailored single-crystal van der Waals heterostructures, ultrafast optoelectronic characteristics, and broadband photon absorption. However, the photosensitivity obtained from such devices, even under a large bias voltage, is still unsatisfactory until now. In this paper, high-sensitivity phototransistors based on WS2 and MoS2 are proposed, designed, and fabricated with gold nanoparticles (AuNPs) embedded in the gate dielectric. These AuNPs, located between the tunneling and blocking dielectric, are found to enable efficient electron trapping in order to strongly suppress dark current. Ultralow dark current (10−11 A), high photoresponsivity (1090 A W−1), and high detectivity (3.5 × 1011 Jones) are obtained for the WS2 devices under a low source/drain and a zero gate voltage at a wavelength of 520 nm. These results demonstrate that the floating-gate memory structure is an effective configuration to achieve high-performance 2D electronic/optoelectronic devices. [ABSTRACT FROM AUTHOR]

A semiconductor oxide composite consisting of ZnO nanorods (NRs) and ZnO inverse opal (IO) was fabricated and used in the photoanode of quantum dot-sensitized solar cells (QDSSCs). Using polystyrene spheres 500, 800, 1000, and 1500 nm in diameter as the IO template, ZnO composites and corresponding QDSSCs with ZnO IOs of different pore sizes were fabricated. The oxide composite prepared with ZnO IOs of different pore sizes showed similar micro-morphologies; however, the photovoltaic performance of the QDSSCs based on these composites varied greatly. The QDSSCs based on the ZnO composite achieved high power conversion efficiencies (PCEs) of more than 6%, and the maximum PCE was 7.26% when the ZnO IO pore diameter in the composite was 800 nm. This resulted in very high PCE values for the QDSSCs using CdS/CdSe quantum dot sensitizers. With further interface modifications of NH 4 F and ZnS, the QDSSC achieved an even higher PCE value of 11.38%. Subsequently, the effects of ZnO IO pore size in the composite on QDSSC performance were investigated.