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Wound healing is a multifaceted process that involves hemostasis, inflammation, proliferation, and remodeling stages. Diabetic wounds affect the transition of the organized phases and result in delayed healing due to impaired angiogenesis, chronic inflammation, bacterial infection, and insufficient growth factors. Multifunctional heterostructural nanoparticles enriched minimally invasive hydrogels for on-demand procedural distribution to aid wound healing at various stages has become a promising strategy. Herein, silk fibroin-hyaluronic acid based injectable hydrogels incorporated with mace-like Au–CuS heterostructural nanoparticles (gAu–CuS HSs) were used to cure diabetic wounds. SF–HA and the rough surface of gAu–CuS HSs confer a synergistic hemostatic phase with a nano-bridge effect and rapidly close the wounds. During the inflammation stage, gAu–CuS HSs perform in-space resonance energy transfer under 808 nm laser irradiation which in return produces reactive oxygen species for bacterial destruction. The unusual mace-like rough structure of nanoparticles causes macrophage transfer to the M2 phenotype, regulates cytokine expression (interleukin 6, transforming factor-β1, interferon γ, and interleukin-10), promotes angiogenesis, and promotes cell multiplication and fibroblast emigration to the wound area during the proliferation and remodeling phase. Overall, the gAu–CuS HSs reinforced injectable hydrogel programmatically accelerates wound healing and could represent a versatile strategy for advanced diabetic wound healing. [ABSTRACT FROM AUTHOR]

A 23 to 31 GHz low‐noise amplifier (LNA) based on 0.1‐μm gallium nitride (GaN) on silicon (Si) microwave monolithic integrated circuit process is presented in this work. Three‐stage cascade topology was used in the LNA design with chip area of 1.9 × 0.8 mm2. The measured linear gain is 22 to 27 dB with low input and output return loss. The noise figure (NF) was measured with cold source methodology, which is 0.93 to 1.36 dB across the working frequency band. The power characteristics were measured, which indicate that this LNA has 1‐dB compression point output power (P1dB) of 23 dBm and saturated output power (Psat) of 28 dBm. The measured output‐referred third‐order intercept point (OIP3) was at 34 dBm level, which indicates the high linearity of this LNA. To inspect the robustness, 30 dBm continuous wave input power was injected into the working LNA for 5 minutes, no obvious degradation was found after stress. Compared with the traditional gallium arsenide (GaAs) and indium phosphide (InP) LNA, GaN LNA reported in this work has comparable NF but much higher robustness. Moreover, this LNA has very high linearity, which increases the immunity to jamming signal, enables more complicated modulation mode and improves data throughput. As we know, there is no GaN LNA achieving such high P1dB and Psat with NF below 1.4 dB at this frequency band. This GaN LNA has a great potential in the applications of electronic war, anti‐electromagnetic interference and signal detection. [ABSTRACT FROM AUTHOR]

The origin of the threshold voltage (Vth) shift that occurs in ON-state biased AlGaN/GaN high-electron mobility transistors (HEMTs) is proposed in terms of experimental researches and first-principles calculations. Experimentally, ∼20% negative shift of the Vth is found for the 0.2 μm gate length T-gate AlGaN/GaN HEMT under the ON-state stress. 1/f noise measurements are carried out to investigate the evolution of defect distribution in the GaN channel, which indicates that the Vth shift is accompanied by the diminishing of the defect level of Ev + 0.8 eV. Combined with first-principles studies based on hybrid functionals defect calculations, we find that the defect evolution of O from negatively charged VGa-ON to neutral ON-H gives rise to the decrease in acceptors in the GaN channel and thus the negative shift of Vth. Our work indicates that the strengthening of oxygen-related defects in GaN during material growth and device fabrication would improve the reliability of AlGaN/GaN HEMTs. [ABSTRACT FROM AUTHOR]

Head and neck squamous cell carcinoma (HNSCC) has been characterized by a low therapeutic response and poor prognosis. Currently, there are no reliable predictive models for HNSCC progression and therapeutic efficacy. This study explores the role of diverse patterns of cell death in tumor development, positing them as predictive factors of HNSCC prognosis. We utilized bulk transcriptome and single-cell transcriptome, align with clinical information from TCGA and GEO database, to analyze genes associated with 15 types of cell death and construct a cell death index (CDI) signature. The associations of CDI with tumor-infiltrating immune cells and immunotherapy-related biomarkers were also evaluated using various algorithms. The CDI signature emerged as a robust prognosis biomarker that could identify patients who can benefit potentially from immunotherapy, thus improving diagnostic accuracy and optimizing clinical decisions in HNSCC management. Notably, we discovered that CAAP1 deficiency not only induced apoptosis but also enhanced anti-tumor immunity, suggesting its potential as a target for clinical drug development., Competing Interests: None., (AJCR Copyright © 2024.)