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The present study evaluated the students' psychological well-being, experiences, performance, and perception of learning regional anatomy remotely. A regional anatomy remote learning curriculum was designed and learning materials were delivered virtually to 120 undergraduate medical students at Jinan University, China. All the students consented and voluntarily participated in this study by completing self-administered online questionnaires including the Zung's Self-Rating Anxiety and Depression Scales at the beginning and end of the learning session. A subset participated in focus group discussions. Most of the students (90.0%) positively evaluated the current distance learning model. More than 80% were satisfied with the content arrangement and coverage. Many students preferred virtual lectures (68.2%) and videos showing dissections (70.6%) during the distance learning sessions. However, writing laboratory reports and case-based learning were the least preferred modes of learning as they were only preferred by 23.2% and 14.1% of the students, respectively. There was no significant lockdown-related anxiety or depression reported by students using depression and anxiety scales as well as feedback from focus group discussions. The surveyed students' confidence scores in distance learning were significantly higher after 5 weeks than at the beginning of the session (3.05 ± 0.83 vs. 3.70 ± 0.71, P < 0.05). Furthermore, the present results showed no significant differences between the current group's academic performance in the unit tests as well as the final overall evaluation for different parts of the course compared to that of the previous year's cohort. The findings above were congruent with focus group discussion data that the use of the online teaching platform for regional anatomy significantly improved the students' confidence in virtual and self-directed learning and did not negatively affect their academic performance.

In this Letter, an enhancement mode (E-mode) β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) with quasi-two-dimensional channel was reported, and the channel mobility of 147.5 cm2/(V·s) is achieved. Low damage etching technology and low Ohmic contact resistance technology are introduced. As a result, the E-mode transistor demonstrates a maximum drain to source current (ID) of 230.5 mA/mm, a peak transconductance (Gm) of 54.2 mS/mm, a current gain cut-off frequency (fT) of 18 GHz, and a power gain cut-off frequency (fMAX) of 42 GHz. Additionally, a positive threshold voltage (VT) of 1.65 V, a breakdown voltage (VBK) of 420 V, and a specific on-resistance (RON,SP) of 1.24 mΩ·cm2 are achieved. Moreover, a fMAX × VBK of 17.64 THz·V and a fT × VBK of 7.56 THz·V are found to be a close value so far to the theoretical limit of β-Ga2O3. This device leads to excellent radio frequency (RF) characteristics, which paved the way for future millimeter-wave RF power electronics applications with β-Ga2O3 MOSFET. [ABSTRACT FROM AUTHOR]

In this work, the effects of proton-induced trap evolution on the electrical performances of AlGaN/GaN metal–insulator–semiconductor (MIS) high-electron-mobility-transistors (HEMTs) have been investigated in detail. Contrary to observed proton-induced degradation in sheet electron density (ns), carrier mobility (μn), and sheet resistance (RSH), a significant improvement in gate leakage current (IG) and off-state drain–source breakdown voltage (BVDS) is found in irradiated devices. The low-frequency noise (LFN) results show that the density of traps in the AlGaN layer and AlGaN/GaN interface increases after irradiation, which leads to a degradation in ns, μn, and RSH and an improvement in BVDS due to enhanced electron trapping and depletion. Furthermore, the measurement results obtained from the frequency-dependent conductance technique show that irradiated devices exhibit decreased trap density (DT) at the insulator/semiconductor interface with hardly changed trap energy level (ET), which confirms the observed proton-induced decrease in IG. An increase in DT at the AlGaN/GaN interface is also found after irradiation, which is consistent with LFN results. These traps with deeper ET induce a serious Coulomb scattering effect. This work provides valuable information for the systematic understanding of the proton irradiation effect of AlGaN/GaN MIS-HEMTs. [ABSTRACT FROM AUTHOR]

This Letter reports two kinds of oxygen-containing plasma treated β-Ga2O3 Schottky barrier diodes (SBDs), including N2O plasma treatment and O2 plasma treatment, and the SBD without plasma is prepared for comparison. I–V characteristics, breakdown characteristics, and trap state characteristics of three devices have been studied. It is found that the turn-on voltage of SBDs with N2O plasma can reduce to 0.6 V, and the better current density of 750 A/cm2 and an on-resistance of 3.5 mΩ cm2 are obtained after the N2O plasma treatment. Moreover, the breakdown voltage of SBDs with N2O plasma is 50.2% higher than the conventional one, whose value reaches 323 V. In addition, the trap states' characteristics of the devices are studied, which show that the oxygen-containing plasma can reduce the deep level trap states density partly in the anode region, which can improve the surface quality effectively. [ABSTRACT FROM AUTHOR]

A β-Ga2O3 Schottky barrier diode (SBD) with a p-type NiOx guard ring was fabricated, and the reverse leakage and subthreshold leakage current reduction was found at high temperatures from temperature-dependent I–V characteristics. The functional mechanisms of NiOx as edge termination on leakage reduction were studied. NiOx can increase the barrier height and passivate the defects at the interface, resulting in the suppression of subthreshold leakage and elimination of current crowding effect confirmed by a thermal emission microscope. From the temperature-dependent x-ray photoelectron spectroscopy characteristics, more holes generated to deplete Ga2O3 at higher temperatures were found. It leads to reduce the reverse leakage current. The small-polaron transportation in NiOx is proposed to argue the implausibility of the leakage conduction in NiOx. This work will offer critical physical insight and a valuable route for developing low-leakage Ga2O3 SBDs. [ABSTRACT FROM AUTHOR]

A low temperature controlled annealing technique was utilized to improve the performance of vertical β-gallium oxide (β-Ga2O3) Schottky barrier diodes (SBDs) in this work. The nickel is diffused into Ga2O3, and NiO was formed at the interface between the anode and semiconductor generating p–n junction after low temperature annealing. Simultaneously, the trap state density of interface Ni/Ga2O3 as well as the carbon bonded with oxygen on the surface was reduced, which was proved by the capacitance and conductance measurements and x-ray photoelectron spectroscopic analysis, respectively. Combined the decreased saturation current density by three orders of magnitude from 1.21 × 10−6 to 9.27 × 10−8 and 5.12 × 10−9 A/cm2 and larger breakdown voltage from 220 to 270 V owing to the optimized interface and the formation of NiO, a low temperature annealing technique makes certain effective improvement for vertical β-Ga2O3 SBDs via interface engineering. [ABSTRACT FROM AUTHOR]

PbZr0.2Ti0.8O3 (PZT) gate insulator with the thickness of 30 nm is grown by pulsed laser deposition (PLD) in AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs). The ferroelectric effect of PZT AlGaN/GaN MIS-HEMT is demonstrated. The polarization charge in PZT varies with different gate voltages. The equivalent polarization charge model (EPCM) is proposed for calculating the polarization charge and the concentration of two-dimensional electron gas (2DEG). The threshold voltage (Vth) and output current density (IDS) can also be obtained by the EPCM. The theoretical values are in good agreement with the experimental results and the model can provide a guide for the design of the PZT MIS-HEMT. The polarization charges of PZT can be modulated by different gate-voltage stresses and the Vth has a regulation range of 4.0 V. The polarization charge changes after the stress of gate voltage for several seconds. When the gate voltage is stable or changes at high frequency, the output characteristics and the current collapse of the device remain stable. [ABSTRACT FROM AUTHOR]

Two types of enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with different gate insulators are fabricated on Si substrates. The HfO2 gate insulator and the Al2O3 gate insulator each with a thickness of 30 nm are grown by the plasma-enhanced atomic layer deposition (PEALD). The energy band diagrams of two types of dielectric MIS-HEMTs are compared. The breakdown voltage (VBR) of HfO2 dielectric layer and Al2O3 dielectric layer are 9.4 V and 15.9 V, respectively. With the same barrier thickness, the transconductance of MIS-HEMT with HfO2 is larger. The threshold voltage (Vth) of the HfO2 and Al2O3 MIS-HEMT are 2.0 V and 2.4 V, respectively, when the barrier layer thickness is 0 nm. The C–V characteristics are in good agreement with the Vth's transfer characteristics. As the barrier layer becomes thinner, the drain current density decreases sharply. Due to the dielectric/AlGaN interface is very close to the channel, the scattering of interface states will lead the electron mobility to decrease. The current collapse and the Ron of Al2O3 MIS-HEMT are smaller at the maximum gate voltage. As Al2O3 has excellent thermal stability and chemical stability, the interface state density of Al2O3/AlGaN is less than that of HfO2/AlGaN. [ABSTRACT FROM AUTHOR]

Introduction: This study evaluated the accuracy of endoscopic ultrasound (EUS) for preoperative staging of rectal cancer and guiding the treatment of transanal endoscopic microsurgery (TEM) in early rectal cancer. Material and methods: One-hundred-twenty-six patients with rectal cancer were staged preoperatively using EUS and the results were compared with postoperative histopathology results. Radical surgeries, including low anterior resection (LAR), abdominal-perineal resection (APR) and Hartmann surgeries, were performed on patients with advanced rectal cancers, and TEM was performed on patients with stage T1. The Kappa statistic was used to determine agreement between EUS-based staging and pathology staging. Results: The overall accuracies of EUS for T and N stage were 90.8% (Kappa = 0.709) and 76.7% (Kappa = 0.419), respectively. The accuracies of EUS for uT1, uT2, uT3, and uT4 stages were 96.8%, 92.1%, 84.1%, and 88.9%, respectively, and for uN0, uN1, and uN2 stages, they were 71.9%, 64.9%, and 93.0%, respectively. Twelve patients underwent TEM and received confirmed pathology results of early rectal cancer. After postoperative follow-up, there were no local recurrences or distant metastases. Conclusion: EUS is a good and comparable technique for postoperative staging of rectal cancer. Moreover, EUS is used as indicator for preoperative staging and tumor assessment strategy when considering TEM. [ABSTRACT FROM AUTHOR]