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With HfO2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one hand, HfO2 contributes to the light emission with the transitions of the defect levels for oxygen vacancy. On the other hand, the special filling-into-microcavities structure of HfO2 leads to the presence of ferroelectricity, which greatly enhances the blue emission from porous silicon. Since both HfO2 and Si are highly compatible with Si-based electronic industry, combined the low-cost and convenient process, the HfO2-filled porous Si shows a promising application prospect.

With HfO2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one hand, HfO2 contributes to the light emission with the transitions of the defect levels for oxygen vacancy. On the other hand, the special filling-into-microcavities structure of HfO2 leads to the presence of ferroelectricity, which greatly enhances the blue emission from porous silicon. Since both HfO2 and Si are highly compatible with Si-based electronic industry, combined the low-cost and convenient process, the HfO2-filled porous Si shows a promising application prospect.

Greatly improved resistance performance, including high resistance ratio between the high resistance state and the low resistance state, long-time retention, and reliable endurance, was observed in TiN/Si:HfO2/oxygen-deficient HfO2/TiN memory cells. The enhanced resistance ratio is ascribed to the creation/elimination of an extra barrier in oxygen-deficient HfO2 layer in response to the polarization reversal in the ferroelectric Si:HfO2 layer. Along with the enhanced resistance ratio, the long retention and good endurance make the proposed device a promising candidate for non-volatile resistive memories.

Greatly enhanced blue emission was observed at room temperature in the single-crystal silicon with HfO2 filled into its microcavities. The broad blue band light was emitted from both the HfO2 dielectric and the porous Si. The ferroelectricity of HfO2 enhances the blue emission from Si by its filling into the microcaivities. At the same time, HfO2 contributes to the light emission for the transitions of the defect levels for oxygen vacancy. The observation of greatly enhanced blue light emission of the porous Si filled with HfO2 dielectric is remarkable as both HfO2 and Si are highly compatible with Si-based electronic industry.