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Abstract Cryo-electron microscopy (cryo-EM) has been widely used to reveal the structures of proteins at atomic resolution. One key challenge is that almost all proteins are predominantly adsorbed to the air-water interface during standard cryo-EM specimen preparation. The interaction of proteins with air-water interface will significantly impede the success of reconstruction and achievable resolution. Here, we highlight the critical role of impenetrable surfactant monolayers in passivating the air-water interface problems, and develop a robust effective method for high-resolution cryo-EM analysis, by using the superstructure GSAMs which comprises surfactant self-assembled monolayers (SAMs) and graphene membrane. The GSAMs works well in enriching the orientations and improving particle utilization ratio of multiple proteins, facilitating the 3.3-Å resolution reconstruction of a 100-kDa protein complex (ACE2-RBD), which shows strong preferential orientation using traditional specimen preparation protocol. Additionally, we demonstrate that GSAMs enables the successful determinations of small proteins (

Abstract The high-intactness and ultraclean fabrication of suspended 2D materials has always been a challenge due to their atomically thin nature. Here, we present a universal polymer-free transfer approach for fabricating suspended 2D materials by using volatile micro-molecule cyclododecane as the transfer medium, thus ensuring the ultraclean and intact surface of suspended 2D materials. For the fabricated monolayer suspended graphene, the intactness reaches 99% for size below 10 µm and suspended size reaches 36 µm. Owing to the advantages of ultra-cleanness and large size, the thermal conductivity reaches 4914 $${\rm{W}}\,{{\rm{m}}}^{-1}{{\rm{K}}}^{-1}$$ W m − 1 K − 1 at 338 K. Moreover, this strategy can also realize efficient batch transfer of suspended graphene and is applicable for fabricating other 2D suspended materials such as MoS2. Our research not only establishes foundation for potential applications and investigations of intrinsic properties of large-area suspended 2D materials, but also accelerates the wide applications of suspended graphene grid in ultrahigh-resolution TEM characterization.

Abstract Graphene growth on widely used dielectrics/insulators via chemical vapor deposition (CVD) is a strategy toward transfer-free applications of CVD graphene for the realization of advanced composite materials. Here, we develop graphene-skinned alumina fibers/fabrics (GAFs/GAFFs) through graphene CVD growth on commercial alumina fibers/fabrics (AFs/AFFs). We reveal a vapor-surface-solid growth model on a non-metallic substrate, which is distinct from the well-established vapor-solid model on conventional non-catalytic non-metallic substrates, but bears a closer resemblance to that observed on catalytic metallic substrates. The metalloid-catalytic growth of graphene on AFs/AFFs resulted in reduced growth temperature (~200 °C lower) and accelerated growth rate (~3.4 times faster) compared to that obtained on a representative non-metallic counterpart, quartz fiber. The fabricated GAFF features a wide-range tunable electrical conductivity (1-15000 Ω sq−1), high tensile strength (>1.5 GPa), lightweight, flexibility, and a hierarchical macrostructure. These attributes are inherited from both graphene and AFF, making GAFF promising for various applications including electrical heating and electromagnetic interference shielding. Beyond laboratory level preparation, the stable mass production of large-scale GAFF has been achieved through a home-made roll-to-roll system with capacity of 468-93600 m2/year depending on product specifications, providing foundations for the subsequent industrialization of this material, enabling its widespread adoption in various industries.

Abstract Direct chemical vapor deposition (CVD) growth of graphene on dielectric/insulating materials is a promising strategy for subsequent transfer-free applications of graphene. However, graphene growth on noncatalytic substrates is faced with thorny issues, especially the limited growth rate, which severely hinders mass production and practical applications. Herein, graphene glass fiber fabric (GGFF) is developed by graphene CVD growth on glass fiber fabric. Dichloromethane is applied as a carbon precursor to accelerate graphene growth, which has a low decomposition energy barrier, and more importantly, the produced high-electronegativity Cl radical can enhance adsorption of active carbon species by Cl–CH2 coadsorption and facilitate H detachment from graphene edges. Consequently, the growth rate is increased by ~3 orders of magnitude and carbon utilization by ~960-fold, compared with conventional methane precursor. The advantageous hierarchical conductive configuration of lightweight, flexible GGFF makes it an ultrasensitive pressure sensor for human motion and physiological monitoring, such as pulse and vocal signals.

Abstract Assembling graphene sheets into macroscopic fibers with graphitic layers uniaxially aligned along the fiber axis is of both fundamental and technological importance. However, the optimal performance of graphene-based fibers has been far lower than what is expected based on the properties of individual graphene. Here we show that both mechanical properties and electrical conductivity of graphene-based fibers can be significantly improved if bridges are created between graphene edges through covalent conjugating aromatic amide bonds. The improved electrical conductivity is likely due to extended electron conjugation over the aromatic amide bridged graphene sheets. The larger sheets also result in improved π-π stacking, which, along with the robust aromatic amide linkage, provides high mechanical strength. In our experiments, graphene edges were bridged using the established wet-spinning technique in the presence of an aromatic amine linker, which selectively reacts to carboxyl groups at the graphene edge sites. This technique is already industrial and can be easily upscaled. Our methodology thus paves the way to the fabrication of high-performance macroscopic graphene fibers under optimal techno-economic and ecological conditions.

Abstract Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W–1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s–1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.

Abstract The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si‐based integrated circuits and GaN‐enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct crystal symmetries typically bring about uncontrollable polycrystalline GaN formation with considerable surface roughness on standard Si(100). Here a breakthrough of high‐quality single‐crystalline GaN film on polycrystalline SiO2/Si(100) is presented by quasi van der Waals epitaxy and fabricate the monolithically integrated photonic chips. The in‐plane orientation of epilayer is aligned throughout a slip and rotation of high density AlN nuclei due to weak interfacial forces, while the out‐of‐plane orientation of GaN can be guided by multi‐step growth on transfer‐free graphene. For the first time, the monolithic integration of light‐emitting diode (LED) and photodetector (PD) devices are accomplished on CMOS‐compatible SiO2/Si(100). Remarkably, the self‐powered PD affords a rapid response below 250 µs under adjacent LED radiation, demonstrating the responsivity and detectivity of 2.01 × 105 A/W and 4.64 × 1013 Jones, respectively. This work breaks a bottleneck of synthesizing large area single‐crystal GaN on Si(100), which is anticipated to motivate the disruptive developments in Si‐integrated optoelectronic devices.

Abstract Bilayer graphene (BLG) is intriguing for its unique properties and potential applications in electronics, photonics, and mechanics. However, the chemical vapor deposition synthesis of large-area high-quality bilayer graphene on Cu is suffering from a low growth rate and limited bilayer coverage. Herein, we demonstrate the fast synthesis of meter-sized bilayer graphene film on commercial polycrystalline Cu foils by introducing trace CO2 during high-temperature growth. Continuous bilayer graphene with a high ratio of AB-stacking structure can be obtained within 20 min, which exhibits enhanced mechanical strength, uniform transmittance, and low sheet resistance in large area. Moreover, 96 and 100% AB-stacking structures were achieved in bilayer graphene grown on single-crystal Cu(111) foil and ultraflat single-crystal Cu(111)/sapphire substrates, respectively. The AB-stacking bilayer graphene exhibits tunable bandgap and performs well in photodetection. This work provides important insights into the growth mechanism and the mass production of large-area high-quality BLG on Cu.

Defect-free integration of 2D materials onto semiconductor wafers is desired to implement heterogeneous electronic devices. Here, the authors report a method to transfer high-quality graphene on target wafers via gradient surface energy modulation, leading to improved structural and electronic properties.

Reliable transfer techniques are critical for the integration of 2D materials with arbitrary substrates. Here, the authors describe a method to transfer 4-inch and A4-sized defect-free graphene films onto rigid and flexible substrates with controllable conformal contact, leading to improved electrical properties and uniformity.

This work successfully achieves a strain-free AlN film with low dislocation density for DUV-LED through graphene-driving strain-pre-store engineering and present the unique mechanism of strain-relaxation in QvdW epitaxy.

Experimental testing of the expected linear optical anisotropy of 2D crystals, arising from their finite thickness, have so far been complicated by substrate contributions. Here, immersion of monolayer samples in a low-refractive-index polymer allows more accurate determination of their optical constants.

Abstract Background The tumor necrosis factor-stimulated gene-6 (TSG-6) has been confirmed to inhibit inflammation. It is now generally accepted that local inflammatory stimulation around shoulder capsule causes proliferative fibrosis. This study aims to investigate the mechanism of recombinant TSG-6 protein inhibiting the growth of capsule fibroblasts in frozen shoulder via the TGF-β/Smad2 signal pathway. Methods Human frozen shoulder capsule tissue was taken for primary and passage culture, and the 3rd generation fibroblasts from pathological frozen shoulder capsule were treated with different concentrations of recombinant TSG-6 protein, or with TGF-β1 agonist SRI-011381. Immunoconfocal analysis was used to identify the isolated fibroblasts, and MTT assay, colony formation assay, and flow cytometry were used to detect the viability, proliferation, and apoptosis rate of fibroblast. The contents of fibrosis and inflammation indexes COL1A1, TNF-α, IL-6, and IL-1β in the cell supernatant were detected using ELISA and then further examined by qRT-PCR. The expression of Bax, Bcl-2, and proteins related to TGF-β/Smad2 pathway were detected by Western Blot. Results Compared with the blank control group, fibroblasts intervened with TSG-6 (2 μg and 5 μg) showed significantly decreased viability and proliferation ability and enhanced cell apoptosis, concurrent with the reductions in Bcl-2 expression; COL1A1, TNF-α, IL-6, and IL-1β levels; and the expression of TGF-β1 and phosphorylated Smad22, and an increase in Bax expression, while SRI-011381 treatment would reverse the effect of recombinant TSG-6 protein. Conclusion Recombinant TSG-6 protein inhibited the growth of primary fibroblasts from human frozen shoulder capsule by suppressing the TGF-β/Smad2 signaling pathway.

Abstract Nitrogen doping has readily emerged as an efficient solution to boost potassium‐ion storage of carbonaceous materials. Nevertheless, the capacity and lifespan enhancement of derived electrodes is still plagued by the incompetent in coordinating the dopant configurations. In the realm of emerging potassium‐ion hybrid capacitor (PIHC) device, dictating nitrogen doping to enhance pseudocapacitive behavior and improve K+ diffusion kinetics of carbonaceous anodes is scarcely demonstrated. Herein, we report the design of hierarchical N‐doped carbon nanopolyhedron@nanosheet composite via a salt‐confined synthetic strategy with tunable doping configurations toward advanced PIHC anode. A harmonized edge‐ to graphitic‐nitrogen ratio in such dual‐carbon materials enables outstanding rate capability (130 mAh g−1 at 10.0 A g−1) and cyclic performance (with a capacity retention of 80% after 2000 cycles at 5.0 A g−1) in half‐cell tests. As expected, the thus‐assembled PIHC full device with a working voltage of 4.2 V presents a high energy/power density (146 Wh kg−1/8000 W kg−1) and favorable cyclicability. This work is anticipated to offer an innovative insight into the coordination of nitrogen doping configurations in heteroatom‐doped carbon anode targeting high‐performance PIHC applications.

The synthesis of twisted bilayer graphene with controllable angles is challenging. Here, the authors devise a chemical vapor deposition approach using a hetero-site nucleation strategy that affords twist angles ranging from 0° to 30°.

Abstract Graphene films, fabricated by chemical vapor deposition (CVD) method, have exhibited superiorities in high crystallinity, thickness controllability, and large‐scale uniformity. However, most synthesized graphene films are substrate‐dependent, and usually fragile for practical application. Herein, a freestanding graphene film is prepared based on the CVD route. By using the etchable fabric substrate, a large‐scale papyraceous freestanding graphene fabric film (FS‐GFF) is obtained. The electrical conductivity of FS‐GFF can be modulated from 50 to 2800 Ω sq−1 by tailoring the graphene layer thickness. Moreover, the FS‐GFF can be further attached to various shaped objects by a simple rewetting manipulation with negligible changes of electric conductivity. Based on the advanced fabric structure, excellent electrical property, and high infrared emissivity, the FS‐GFF is thus assembled into a flexible device with tunable infrared emissivity, which can achieve the adaptive camouflage ability in complicated backgrounds. This work provides an infusive insight into the fabrication of large‐scale freestanding graphene fabric films, while promoting the exploration on the flexible infrared camouflage textiles.

Abstract One of the key challenges in achieving practical lithium–air battery is the poor moisture tolerance of the lithium metal anode. Herein, guided by theoretical modeling, an effective tactic for realizing water‐resistant Li anode by implementing a wax‐assisted transfer protocol is reported to passivate the Li surface with an inert high‐quality chemical vapor deposition (CVD) graphene layer. This electrically conductive and mechanically robust graphene coating enables serving as an artificial solid/electrolyte interphase (SEI), guiding homogeneous Li plating/stripping, suppressing dendrite and “dead” Li formation, as well as passivating the Li surface from moisture erosion and side reactions. Consequently, lithium–air batteries fabricated with the passivated Li anodes demonstrate a superb cycling performance up to 2300 h (230 cycles at 1000 mAh g−1, 200 mA g−1). More strikingly, the anode recycled thereafter can be recoupled with a fresh cathode to continuously run for 400 extended hours. Comprehensive time‐lapse and ex situ microscopic and spectroscopic investigations are further carried out for elucidating the fundamentals behind the extraordinary air and electrochemical stability.

Understanding the atomic arrangement and binding nature of 2D materials with substrates is crucial to understand their properties and utilize their functions. Here, authors report that at high temperature graphene and α-Al2O3 substrate form a C-O-Al bond, having strong interactions, while interfacial structural relaxations of sapphire remain suppressed.

Wearable self-powered electronics receive considerable attention, but development is hindered by bulky designs, energy storage systems, and safety issues. Here the authors demonstrate a flexible solar-charging integrated unit based on printed magnesium ion aqueous asymmetric supercapacitors.

The intrinsic properties of graphene and the resulting device performance are hindered by the impurities produced during the synthesis process. Here, the authors elucidate the origin of contaminations in CVD-grown graphene and devise a strategy towards the scalable production of ultra-clean graphene with >99% clean regions and low contact resistance.

Abstract Efficient and low‐cost production of high‐quality aluminum nitride (AlN) films during heteroepitaxy is the key for the development of deep ultraviolet light‐emitting diodes (DUV‐LEDs). Here, the quasi‐2D growth of high‐quality AlN film with low strain and low dislocation density on graphene (Gr) is presented and a high‐performance 272 nm DUV‐LED is demonstrated. Guided by first‐principles calculations, it is found that AlN grown on Gr prefers lateral growth both energetically and kinetically, thereby resulting in a Gr‐driven quasi‐2D growth mode. The strong lateral growth mode enables most of dislocations to annihilate each other at the AlN/Gr interface, and therefore the AlN epilayer can quickly coalesce and flatten the nanopatterned sapphire substrate. Based on the high quality and low strain of AlN film grown on Gr, the as‐fabricated 272 nm DUV‐LED shows a 22% enhancement of output power than that with low‐temperature AlN buffer, following a negligible wavelength shift under high current. This facile strategy opens a pathway to drastically improve the performance of DUV‐LEDs.

Vertically oriented graphene (VG), owing to its sharp edges, non-stacking morphology, and high surface-to-volume ratio structure, is promising as a consummate material for the application of photoelectric detection. However, owing to high defect and fast photocarrier recombination, VG-absorption-based detectors inherently suffer from poor responsivity, severely limiting their viability for light detection. Herein, we report a high-performance photodetector based on a VG/indium tin oxide (ITO) composite structure, where the VG layer serves as the light absorption layer while ITO works as the carrier conduction channel, thus achieving the broadband and high response nature of a photodetector. Under the illumination of infrared light, photoinduced carriers generated in VG could transfer to the floating ITO layer, which makes them separate and diffuse to electrodes quickly, finally realizing large photocurrent detectivity. This kind of composite structure photodetector possesses a room temperature photoresponsivity as high as ~0.7 A/W at a wavelength of 980 nm, and it still maintains an acceptable performance at temperatures as low as 87 K. In addition, a response time of 5.8 s is observed, ~10 s faster than VG photodetectors. Owing to the unique three-dimensional morphology structure of the as-prepared VG, the photoresponsivity of the VG/ITO composite photodetector also presented selectivity of incidence angles. These findings demonstrate that our novel composite structure VG device is attractive and promising in highly sensitive, fast, and broadband photodetection technology.

Two-dimensional (2D) bismuth oxyselenide crystals with suitable electronic band-gap and ultrahigh carrier mobility enable near-infrared photodetection. Here, the authors report an infrared photodetector based on 2D-bismuth oxyselenide with high responsivity, ultrafast photoresponse of ~ 1 ps at room temperature and a detectable frequency limit of up to 500 GHz.

The electrical response of the eye to optical stimulus is important in disease diagnosis but current electrodes used have limitations. Here, the authors report on the development of soft transparent graphene-based contact lens electrodes for electroretinogram recording and test the device in vivo.

Growth of large-area monolayer transition metal dichalcogenides is critical for their application but remains challenging. Here Yang et al. report rapid chemical vapor deposition of 6-inch monolayer molybdenum disulfide by sufficiently uniformly supplying the precursors and catalysts.

Metallic transition metal dichalcogenides are important materials for catalysis, but scalable and controllable preparation methods are scarce. Here, the authors synthesize 2H-TaS2 as centimetre-scale films of tunable thickness and show they are an efficient catalyst for hydrogen evolution.

High-volume, low-cost production of graphene is pivotal for the industrial advance of this 2D material. Here, the authors make use of naturally occurring diatomite as a 3D substrate for graphene growth, obtaining non-planar porous graphene structures after removal of the silica templates.

Graphene has the high carrier mobility and short photoresponse time required for efficient photodetection, but broad and weak optical absorption are severe drawbacks. Here, the authors show that twisted bilayer graphene with van Hove singularities exhibits a strong light-matter interaction and selectively enhanced photocurrent generation.

An amendment to this paper has been published and can be accessed via a link at the top of the paper

Transparent heating devices are widely used in daily life-related applications that can be achieved by various heating materials with suitable resistances. Herein, high-performance vertically-oriented graphene (VG) films are directly grown on soda-lime glass by a radio-frequency (rf) plasma-enhanced chemical vapor deposition (PECVD) method, giving reasonable resistances for electrothermal heating. The optical and electrical properties of VG films are found to be tunable by optimizing the growth parameters such as growth time, carrier gas flow, etc. The electrothermal performances of the derived materials with different resistances are thus studied systematically. Specifically, the VG film on glass with a transmittance of ~73% at 550 nm and a sheet resistance of ~3.9 KΩ/□ is fabricated into a heating device, presenting a saturated temperature up to 55 °C by applying 80 V for 3 min. The VG film on the glass at a transmittance of ~43% and a sheet resistance of 0.76 KΩ/□ exhibits a highly steady temperature increase up to ~108 °C with a maximum heating rate of ~2.6 °C/s under a voltage of 60 V. Briefly, the tunable sheet resistance, good adhesion of VG to the growth substrate, relative high heating efficiency, and large heating temperature range make VG films on glass decent candidates for electrothermal related applications in defrosting and defogging devices.

The various forms of carbon nanostructures are providing extraordinary new opportunities that can revolutionize the way gas sensors, electrochemical sensors and biosensors are engineered. The great potential of carbon nanostructures as a sensing platform is exciting due to their unique electrical and chemical properties, highly scalable, biocompatible and particularly interesting due to the almost infinite possibility of functionalization with a wide variety of inorganic nanostructured materials and biomolecules. This opens a whole new pallet of specificity into sensors that can be extremely sensitive, durable and that can be incorporated into the ongoing new generation of wearable technology. Within this context, carbon-based nanostructures are amongst the most promising structures to be incorporated in a multi-functional platform for sensing. The present review discusses the various 1D, 2D and 3D carbon nanostructure forms incorporated into different sensor types as well as the novel functionalization approaches that allow such multi-functionality.

We demonstrate trifluoromethylation of graphene by copper-catalyzed free radical reaction. The covalent addition of CF3 to graphene, which changes the carbon atom hybridization from sp2 to sp3, and modifies graphene in a homogeneous and nondestructive manner, was verified with Raman spectroscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. X-ray photoelectron spectroscopy reveals that CF3 groups are grafted to the basal plane of graphene, with about 4 at. % CF3 coverage. After trifluoromethylation, the average resistance increases by nearly one order of magnitude, and an energy gap of about 98 meV appears. The noninvasive and mild reaction to synthesize trifluoromethylated graphene paves the way for graphene's applications in electronics and biomedical areas.

The isolation of a single layer of graphite, known today as graphene, not only demonstrated amazing new properties but also paved the way for a new class of materials often referred to as two-dimensional (2D) materials. Beyond graphene, other 2D materials include h-BN, transition metal dichalcogenides (TMDs), silicene, and germanene, to name a few. All tend to have exciting physical and chemical properties which appear due to dimensionality effects and modulation of their band structure. A more recent member of the 2D family is graphene-like zinc oxide (g-ZnO) which also holds great promise as a future functional material. This review examines current progress in the synthesis and characterization of g-ZnO. In addition, an overview of works dealing with the properties of g-ZnO both in its pristine form and modified forms (e.g., nano-ribbon, doped material, etc.) is presented. Finally, discussions/studies on the potential applications of g-ZnO are reviewed and discussed.

Nature Communications 7: Article numbber:10699 (2015); Published: 7 March 2016; Updated: 19 July 2016. Technical support for this Article was not fully acknowledged. The Acknowledgements should have included the following: We are also grateful to Dr Alexei Barinov for his kind help during our beamtime at the spectramicroscopy beamline of the Elettra synchrotron.

The charge transport properties of zigzag graphene nanoribbons (ZGNRs) under uniaxial and shear strains are theoretically studied. Although all strained ZGNRs have similar metallic band structures, they show four types of transport behavior under bias voltages that depend on the type of strain and the mirror symmetry of the ZGNR. Under an applied uniaxial strain, the current of symmetric ZGNRs is consistently small, while for asymmetric ZGNRs it is large. In contrast, the current increases with increasing shear strain for symmetric ZGNRs while it decreases for asymmetric ZGNRs. The current properties merge when the shear strain exceeds a critical value, and the two systems then show similar behavior. Our results suggest that strained ZGNRs with an appropriate applied shear are ideal conducting wires.