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Falling within the safe bands for human eyes, 1550 nm semiconductor lasers have a wide range of applications in the fields of LIDAR, fast-ranging long-distance optical communication, and gas sensing. The 1550 nm human eye-safe high-power tunnel junction quantum well laser developed in this paper uses three quantum well structures connected by two tunnel junctions as the active region; photolithography and etching were performed to form two trenches perpendicular to the direction of the epitaxial layer growth with a depth exceeding the tunnel junction, and the trenches were finally filled with oxides to reduce the extension current. Finally, a 1550 nm InGaAlAs quantum well laser with a pulsed peak power of 31 W at 30 A (10 KHz, 100 ns) was realized for a single-emitter laser device with an injection strip width of 190 μm, a ridge width of 300 μm, and a cavity length of 2 mm, with a final slope efficiency of 1.03 W/A, and with a horizontal divergence angle of about 13° and a vertical divergence angle of no more than 30°. The device has good slope efficiency, and this 100 ns pulse width can be effectively applied in the fields of fog-transparent imaging sensors and fast headroom ranging radar areas.

Antimonene has attracted much attention due to its excellent characteristics of high carrier mobility, thermoelectric properties and high stability. It has great application prospects in Q-switched lasers, laser protection and spintronics. At present, the epitaxy growth of antimonene mainly depends on molecular beam epitaxy. We have successfully prepared antimonene films on silicon, germanium/silicon substrates for the first time using electron beam evaporation coating and studied the effects of the deposition rate and substrate on the preparation of antimonene; film characterization was performed via confocal microprobe Raman spectroscopy, via X-ray diffraction and using a scanning electron microscope. Raman spectroscopy showed that different deposition rates can lead to the formation of different structures of antimonene, such as α phase and β phase. At the same time, it was found that the growth of antimonene is also affected by different substrates and ion beams.

In this paper, an intelligent blind guide system based on 2D LiDAR and RGB-D camera sensing is proposed, and the system is mounted on a smart cane. The intelligent guide system relies on 2D LiDAR, an RGB-D camera, IMU, GPS, Jetson nano B01, STM32, and other hardware. The main advantage of the intelligent guide system proposed by us is that the distance between the smart cane and obstacles can be measured by 2D LiDAR based on the cartographer algorithm, thus achieving simultaneous localization and mapping (SLAM). At the same time, through the improved YOLOv5 algorithm, pedestrians, vehicles, pedestrian crosswalks, traffic lights, warning posts, stone piers, tactile paving, and other objects in front of the visually impaired can be quickly and effectively identified. Laser SLAM and improved YOLOv5 obstacle identification tests were carried out inside a teaching building on the campus of Hainan Normal University and on a pedestrian crossing on Longkun South Road in Haikou City, Hainan Province. The results show that the intelligent guide system developed by us can drive the omnidirectional wheels at the bottom of the smart cane and provide the smart cane with a self-leading blind guide function, like a “guide dog”, which can effectively guide the visually impaired to avoid obstacles and reach their predetermined destination, and can quickly and effectively identify the obstacles on the way out. The mapping and positioning accuracy of the system’s laser SLAM is 1 m ± 7 cm, and the laser SLAM speed of this system is 25~31 FPS, which can realize the short-distance obstacle avoidance and navigation function both in indoor and outdoor environments. The improved YOLOv5 helps to identify 86 types of objects. The recognition rates for pedestrian crosswalks and for vehicles are 84.6% and 71.8%, respectively; the overall recognition rate for 86 types of objects is 61.2%, and the obstacle recognition rate of the intelligent guide system is 25–26 FPS.

The 1.55 μm waveband integrated external cavity tunable diode lasers have excellent merits such as their small volume, low cost, low power consumption, wide tuning range, narrow linewidth, large side mode suppression ratio, and high output power. These merits have attracted many applications for the lasers, such as in wavelength division multiplexing, passive optical networks, mobile backhaul, and spectral sensing technology. In this paper, firstly, the basic structure and principle of integrated external cavity tunable diode lasers are introduced, and then two main integrated structures of 1.55 μm waveband external cavity tunable diode lasers are reviewed and compared in detail, namely the hybrid integrated structure and monolithic integrated structure of 1.55 μm waveband integrated external cavity tunable diode lasers. Finally, the research progress in 1.55 μm waveband integrated external cavity tunable diode lasers in the last decade are summarised, and the advantages and disadvantages of 1.55 μm waveband integrated external cavity tunable diode lasers are analysed. The results show that, with the transformation of optical communication into more complex modulation formats, it is necessary to integrate miniature 1.55 μm waveband external cavity tunable diode lasers. Low-cost integrated 1.55 μm waveband external cavity tunable diode lasers are expected to be used in the next generation of optical transceivers in small-factor modules.

Abstract Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ~ 1.06 μm, with a fundamental repetition rate at ~ 19.56 GHz have been demonstrated. Modal gain characteristics, such as a gain bandwidth and a gain peak wavelength of the MLL, as a function of the saturable absorber (SA) bias voltage (V a ) as well as the injection current of gain section (I g), were investigated by the Hakki-Paoli method. With the increase of V a , the lasing wavelength and net modal gain peak of the MLL both exhibited red-shifts to longer wavelength significantly, while the modal gain bandwidth was narrowed. Both the net modal gain bandwidth and gain peak of the MLL followed a polynomial distribution versus the reverse bias at the absorber section. In addition, for the first time, it was found that V a had an obvious effect on the modal gain characteristics of the MLL.

The key advantage of silicon photonics comes from its potential for large scale integration, in a low-cost and scalable fashion. This has sustained the growth in the area despite disadvantages such as the lack of a monolithic light source, or the absence of a second order non-linear response (χ(2)). Thus far, the work in the field has focused on reporting individual devices from a single die, with excellent performances. Wafer-level results, an area which has not been addressed sufficiently, is a critical aspect of silicon photonics and will provide the community with information regarding scalability and variation, which will be the key differentiating advantage of silicon photonics over other photonic platforms. In this work, we report the development of a low-loss, high-bandwidth C-band silicon photonic platform on a 200 mm CMOS-compatible process line, demonstrating wafer-level performance in the process. Ultra-low waveguide propagation loss with median values as low as 0.43 dB/cm has been achieved. Silicon Mach-Zehnder and microring modulators with median bandwidth of 38.5 and 43 GHz respectively are presented. Finally, germanium waveguide-integrated photodetectors with median bandwidth of 43 GHz are reported. The results reported in this work are comparable to prior demonstrations concerning individual devices. The baseline designs on this platform presented in this work can be accessed commercially from CompoundTek.

A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06 μm is demonstrated. Stable mode locking operation is achieved up to 80 °C. The fundamental repetition rate is at ~9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ~38.04 GHz is observed. The characteristic temperature (T0) of the laser and the influences of absorber bias voltage on T0 have been systematically investigated. From our findings, T0 shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation.

The 2 µm waveband is capable of enabling pervasive applications. The demonstration of the hollow-core photonic bandgap fiber and the thulium-doped fiber amplifier has highlighted the fiber propagation and amplification aspects of fiber communications, indicating its potential as an adjunct to present communication infrastructure at the O/C bands. The above is especially imperative given the current concerns with regards to the upper bandwidth limit of the single-mode fiber. Furthermore, the waveband could facilitate many more applications such as LIDAR and free-space communication. However, water absorption (OH-) is high at most of the 2 μm waveband and this will impact the optical insertion loss of applications implemented in the wavelength region. The relative low water absorption region of the waveband falls within 1950 – 2000 nm. As such, the development of a hybrid/heterogeneous III-V/silicon laser source that operates within the region is important for 2 µm silicon photonics. In this work, we demonstrate a III-V/Si hybrid tunable laser operating from 1955 - 1992 nm for the first time. Room temperature continuous wave operation is achieved with a maximum laser output power of 8.1 mW. This wavelength-tunable laser operates specifically within the low water absorption window, indicating good wavelength suitability for applications at the 2 μm waveband.

All-solid-state 228.5 nm Deep Ultraviolet (DUV) laser has been studied with two-step second harmonious generation (SHG) of Nd:YVO4 914 nm fundamental laser, by optimizing its resonator design and SHG configurations. Adopting three-mirror folded V cavity and acousto-optical Q-switching, high peak power 457 nm laser output has been achieved by intracavity frequency-doubling of LD pumped Nd:YVO4 914 nm fundamental laser. At pump power of 41 W, the average output power for 457 nm laser has reached 600 mW at repetition frequency 10 kHz, 50 ns pulse width. With Type-I phase matching BBO crystal, external frequency doubling of 457 nm blue output was realized and optimized. Under LD pump power of 41 W, DUV laser at 228.5 nm with average output power of 35 mW has been achieved, at repetition frequency 10 kHz and pulse width of 46 ns. Under these conditions, the frequency doubling conversion efficiency is 5.8%, and the DUV laser output power instability is less than 2% in 2-hour test.

Laser sensing and vision sensing smart canes can improve the convenience of travel for the visually impaired, but for the present, most of the system functions of laser sensing and vision sensing smart canes are still defective. Guide equipment and smart blind canes are introduced and classified first, and the smart blind canes based on vision sensing, laser sensing and laser vision sensing are investigated, respectively, and the research status of laser vision sensing smart blind canes is sorted out. The advantages and disadvantages of various laser vision sensing smart blind canes are summarized, especially the research development of laser vision fusion as the core of new smart canes. The future development prospects of laser vision sensing smart blind cane are overviewed, to boost the development of laser vision sensing smart blind cane, to provide safe and efficient travel guarantee for the visually impaired.

Antimonene has attracted much attention due to its excellent properties such as high carrier mobility, excellent thermoelectric performance and high stability. In order to verify its theoretical advantages, a large number of experimental studies have been carried out and its applications explored. This paper mainly introduces the experimental preparation of antimonene by mechanical exfoliation, liquid phase exfoliation and epitaxial growth, summarizes the advantages and disadvantages of each method, and describes the applications of antimonene in sensor, battery, medicine and laser. Finally, prospects have been made to the future applications of antimonene in photoelectric field.

In this paper, we review the progress of wide tunable Bragg grating external cavity semiconductor lasers (BG-ECSLs). We concentrate on BG-ECSLs based on the wide tunable range for multicomponent detection. Wide tunable BG-ECSLs have many important applications, such as wavelength-division multiplexing (WDM) systems, coherent optical communications, gas detection and atom cooling. Wide tunability, narrow linewidth and a high side-mode suppression ratio BG-ECSLs have attracted much attention for their merits. In this paper, three main structures for achieving widely tunable, narrow linewidth, high side-mode suppression ratio BG-ECSLs are reviewed and compared in detail, such as the volume Bragg grating (VBG) structure, fiber Bragg grating (FBG) structure and waveguide Bragg grating (WBG) structure of ECSLs. The advantages and disadvantages of different structures of BG-ECSLs are analyzed. The results show that WBG-ECSLs are a potential way to realize the integration, small size, wide tuning range, stable spectral output and high side-mode suppression ratio laser output. Therefore, the use of WBG as optical feedback elements is still the mainstream direction of BG-ECSLs, and BG-ECSLs offer a further new option for multicomponent detection and multi-atoms cooling.

In this paper, we review the progress of the development and application of external cavity quantum cascade lasers (ECQCLs). We concentrated on ECQCLs based on the wide tunable range for multi-component detection and applications. ECQCLs in the mid-infrared band have a series of unique spectral properties, which can be widely used in spectroscopy, gas detection, protein detection, medical diagnosis, free space optical communication, and so on, especially wide tuning range, the tuning range up to hundreds of wavenumbers; therefore, ECQCLs show great applications potential in many fields. In this paper, the main external cavity structures of ECQCLs are reviewed and compared, such as the Littrow structure, the Littman structure, and some new structures. Some new structures include the intra-cavity out-coupling structure, multimode interference (MMI) structure, and acousto-optic modulator (AOM) control structure. At the same time, the application research of ECQCLs in gas detection, protein detection, and industry detection are introduced in detail. The results show that the use of diffraction gratings as optical feedback elements can not only achieve wide tuning, but it also has low cost, which is beneficial to reduce the complexity of the laser structure. Therefore, the use of diffraction gratings as optical feedback elements is still the mainstream direction of ECQCLs, and ECQCLs offer a further new option for multi-component detection.

The electrical sensing elements used in the traditional XBT (Expendable Bathythermograph) have problems such as low sensitivity and slow response time, and it is difficult to overcome the complex marine environment using the time–depth formula. In this paper, an ocean temperature depth sensor based on brass diaphragm and liquid filling is designed. The stress response time of FBGs with different lengths and the heat transfer time of different liquid materials are compared, and it is found that a fast response of 51 ms can be obtained by using GaInSn liquid for temperature sensing. The center deflection changes of brass diaphragms with different radii are analyzed, and the brass diaphragms with radius and thickness of 10 mm and 1 mm are selected, which still have good elastic properties under the pressure of 5 MPa. The influence of the inner metal shell section radius on the temperature and depth sensitivity is analyzed. When the final section radius is 3 mm, the temperature sensitivity of the sensor is 1.065 nm/°C, the pressure sensitivity is 1.245 nm/MPa, and the response time of temperature and depth is relatively close. Compared with the traditional temperature and depth sensors using empirical formulas for calculation, the data accuracy is improved, and a wide range of sensitivity can be tuned by adjusting the size of the internal metal shell, which can meet the needs of ocean temperature and depth data detection with high sensitivity and fast response time.

Narrow linewidth external cavity semiconductor lasers (NLECSLs) have many important applications, such as spectroscopy, metrology, biomedicine, holography, space laser communication, laser lidar and coherent detection, etc. Due to their high coherence, low phase-frequency noise, high monochromaticity and wide wavelength tuning potential, NLECSLs have attracted much attention for their merits. In this paper, three main device structures for achieving NLECSLs are reviewed and compared in detail, such as free space bulk diffraction grating external cavity structure, waveguide external cavity structure and confocal Fabry–Perot cavity structure of NLECSLs. The Littrow structure and Littman structure of NLECSLs are introduced from the free space bulk diffraction grating external cavity structure of NLECSLs. The fiber Bragg grating external cavity structure and silicon based waveguide external cavity structure of NLECSLs are introduced from the waveguide external cavity structure of NLECSLs. The results show that the confocal Fabry–Perot cavity structure of NLECSLs is a potential way to realize a lower than tens Hz narrow linewidth laser output.

In this paper, a pressure sensor based on a metal diaphragm and lever structure is designed, the sensing principle and mechanical structure of this sensor are analyzed and simulated, and its sensitization effectiveness and temperature compensation are verified. The maximum deflections of metal diaphragms of different sizes and materials were compared, and it was found that the square beryllium bronze diaphragm with a thickness of 1 mm and a side length of 20 mm had good elastic properties. The influence of the FBG in different positions of the lever on the center wavelength is analyzed. The sensitivity of the bare FBG is markedly improved under the influence of the two structures of the square elastic diaphragm and the lever, with a typical pressure sensitivity of 3.35 nm/MPa at 3 mm to the left of the lever center. The purpose of temperature compensation is achieved by adding another FBG that measures the temperature, and the sensing sensitivity can be tuned by adjusting the position of the FBG. It can meet the detection needs of a small range and high sensitivity.

Widely tunable, narrow linewidth external cavity lasers on silicon substrates have many important applications, such as white-light interferometry, wavelength division multiplexing systems, coherent optical communication, and optical fiber sensor technology. Wide tuning range, high laser output power, single mode, stable spectral output, and high side-mode suppression ratio external cavity lasers have attracted much attention for their merits. In this paper, two main device-integrated structures for achieving widely tunable, narrow linewidth external cavity lasers on silicon substrates are reviewed and compared in detail, such as MRR-integrated structure and MRR-and-MZI-integrated structure of external cavity semiconductor lasers. Then, the chip-integrated structures are briefly introduced from the integration mode, such as monolithic integrated, heterogeneous integrated, and hybrid integrated. Results show that the silicon-substrate-integrated external cavity lasers are a potential way to realize a wide tuning range, high power, single mode, stable spectral output, and high side-mode suppression ratio laser output.

InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method. The IFVD-QWI process was carried out by sputtering-depositing SiO2 mask layers on top of the complete InGaAs/GaAs/AlGaAs QW laser structure, emitting at 980 nm wavelength, and followed by a rapid thermal annealing at 880 °C for 60 s. The lasing wavelength of the devices fabricated from the intermixed wafer was blue-shifted with the increase of the mask layer thickness. The maximum emission wavelength blue shift of a processed as-cleaved laser reached 112 nm with the output-power more than 1000 mW. By using such an IFVD-QWI technique, multi-wavelength integrated LDs have also been successfully fabricated from a single chip.

The passivation effects of SF6 plasma on zinc oxide (ZnO) films prepared by magnetron sputtering were researched. After the SF6 plasma passivation of ZnO films, the grain size increases, there is low surface roughness, and a small amount of Zn-F bonds are formed, resulting in the narrowing of band gap. The photoluminescence (PL) intensity of SF6-passivated ZnO films has a 120% increase compared to the untreated samples, and the reduction in defects can increase the resistivity and stability of ZnO films. ZnO films are used in the preparation of ZnO/p-Si heterojunction diodes. The results of the measurement of current voltage (J−V) show that the reverse current is reduced after SF6 plasma passivation, indicating an improvement in the electrical properties of ZnO films.

The passivation effects of the SF6 plasma on a GaAs surface has been investigated by using the radio frequency (RF) plasma method. The RF’s power, chamber pressure, and plasma treatment time are optimized by photoluminescence (PL), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The PL intensity of passivated GaAs samples is about 1.8 times higher than those which are untreated. The oxide traps and As-As dimers can be removed effectively by using SF6 plasma treatment, and Ga-F can form on the surface of GaAs. It has also been found that the stability of the passivated GaAs surface can be enhanced by depositing SiO2 films onto the GaAs surface. These indicate that the passivation of GaAs surfaces can be achieved by using SF6 plasma treatment.