15 results on '"Zhou, Deqiu"'
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2. High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth
3. The breakdown behavior of GaN epitaxial material on silicon
4. Influence of the Aln/Gan superlattices buffer thickness on the electrical properties of Algan/Gan HFET on Si substrate
5. Investigation of O3‐Al2O3/H2O‐Al2O3 dielectric bilayer deposited by atomic‐layer deposition for GaN MOS capacitors
6. Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure
7. Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer
8. Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis
9. Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors
10. Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate
11. The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET
12. Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system
13. Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode
14. Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors.
15. Investigation of O3‐Al2O3/H2O‐Al2O3dielectric bilayer deposited by atomic‐layer deposition for GaN MOS capacitors
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