125 results on '"Zhou, Jiuren"'
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2. Thin film ferroelectric photonic-electronic memory
3. Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition
4. Sensing with extended gate negative capacitance ferroelectric field-effect transistors
5. Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories
6. Integration of Ferroelectric Al0.8Sc0.2N on Si (001) Substrate
7. Energy-Efficient Reconfigurable Transistor Achieving Sub-Nanojoule Consumption Per Programming Event
8. Photoelectric In-memory Logic and Computing Achieved in HfO2-based Ferroelectric Optoelectronic Memcapacitors
9. Depolarization Field Engineered Ferroelectric Mechanical Transistor With 0.3-Volts V DD
10. Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories
11. Sensing with extended gate negative capacitance ferroelectric field-effect transistors
12. ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
13. High mobility germanium-on-insulator p-channel FinFETs
14. A Modeling Study on Electrical and Thermal Behavior of CNT TSV for Multilayer Structure
15. Voltage Bias Scheme Optimization in FeFET Based Neural Network System
16. Thin film ferroelectric photonic-electronic memory
17. Photoelectric In-Memory Logic and Computing Achieved in HfO2-Based Ferroelectric Optoelectronic Memcapacitors
18. A Modeling Study of Stacked Cu-CNT TSV on Electrical, Thermal, and Reliability Analysis
19. Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
20. HfO₂-Based Ferroelectric Optoelectronic Memcapacitors
21. Low Thermal Budget Reconfigurable Fully Depleted Silicon on Insulator Field-Effect-Transistors With Embedded Boolean Logic
22. Inversion-Type Ferroelectric Capacitive Memory and Its 1-Kbit Crossbar Array
23. Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
24. Ferroelectric-Semiconductor Tunnel Junction With Ultrathin Semiconductor Electrode Engineering
25. Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects
26. Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention
27. First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit
28. Energy-efficient non-volatile ferroelectric based electrostatic doping multilevel optical readout memory
29. Reconfigurable Ferroelectric Electrostatic Doped Negative Capacitance Nanosheet Field-Effect Transistors with Enhanced ION/IOFF and Scaled VDD < 0.45 V
30. Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1–xZrxO2
31. A Compact Model for Nanowire Tunneling-FETs
32. The Device and Circuit Level Benchmark of Si-Based Cold Source FETs for Future Logic Technology
33. Ferroelectric Devices for Intelligent Computing
34. Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics
35. Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition.
36. Al-doped and Deposition Temperature-engineered HfO2 Near Morphotropic Phase Boundary with Record Dielectric Permittivity (~68)
37. Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors
38. Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure
39. A 6.5 nm thick anti-ferroelectric HfAlO x film for energy storage devices with a high density of 63.7 J cm−3
40. Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs
41. Review of Si-Based GeSn CVD Growth and Optoelectronic Applications
42. Characteristics of InAs/GaSb Line-Tunneling FETs With Buried Drain Technique
43. Proposal of Ferroelectric Based Electrostatic Doping for Nanoscale Devices
44. A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film
45. Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High P r of 23.7 μC/cm2
46. High mobility germanium-on-insulator p-channel FinFETs
47. ZrO2 Negtive Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
48. Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1–xZrxO2.
49. Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
50. Demonstration of Ferroelectricity in Al-doped HfO2 with a Low Thermal Budget of 500 °C
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