87 results on '"Zhou, Xintian"'
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2. Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs
3. Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress
4. Degradation in super-junction MOSFET under successive exposure of heavy ion strike and gamma ray irradiation
5. Study on Perfecting the System of Discipline and Law Connection
6. SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness
7. Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension
8. Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure
9. Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance
10. Performance of BDIH diodes at small currents
11. Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process
12. Design and Simulation of 1.2kV Semi-Super Junction FRD with Vertical Variation Doping
13. Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection
14. A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers
15. Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region
16. Design and Simulation of 1.2kV SiC Super-junction SBD with Vertical Variation Doping
17. A new high-voltage diode structure with backside double injection holes (BDIH)
18. Gate Bias Dependence of V TH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests
19. SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness
20. Performance of BDIH diodes at small currents
21. Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping
22. High voltage CIBH diodes with new structure on the cathode side of the edge
23. Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET
24. Study on The Degradations Produced by Different P-base Diffusion Temperatures on SGT MOSFET With Approximate Threshold Voltage
25. Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer
26. A Novel Reverse-Conducting IGBT With Built-In Channel Diode
27. Anti-total dose effect design of half-bridge driving chip
28. 3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET
29. The Reverse Recovery Characteristics of an Improved 3.3-kV CIBH Diode with Local Heavily Doped N++ Regions at the Cathode
30. Oxide Damage Induced Leakage Current Degradation in SiC MOSFETs during Heavy-ion Irradiation
31. Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike
32. SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness
33. A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode
34. How Tax Reduction or Exemption Influence Prices --Empirical Evidence from Cases About Tampon Tax Reduction or Exemption
35. Influence of Backside p-Region Area Ratio on the Overcurrent Reverse Recovery of High-voltage RFC Diodes
36. Effect of Plasma Amount on the Current Filaments Evolving Pattern within High-Voltage Power Diodes During Overcurrent Reverse Recovery
37. Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode
38. Electrical Parameters Degradation of E-mode GaN Under Repeated Short-Circuit Impacts
39. Architecture-level Radiation-Hardened design applied to halfbridge GaN driver
40. The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode
41. Short-circuit Failure Mechanism of SiC Double-trench MOSFET
42. Degradation of Radiation-Hardened Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor During Gamma Ray Irradiation Performed After Heavy Ion Striking
43. SiC Double-Trench MOSFETs With Embedded MOS-Channel Diode
44. SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance
45. Single-Event Effects in SiC Double-Trench MOSFETs
46. A Simulation Study on Single-Event Burnout in Power Normally-off AlGaN/GaN HEMT
47. A New Perspective on the Plasma Clearance during Overcurrent Reverse Recovery of Silicon High-Voltage Power Diodes
48. Simulation Study on Temperature Characteristics of IGBT Switching with Polysilicon Distributed Gate Resistance Effect
49. Degradation Characteristics of Enhancement-Mode Gallium Nitride Cascoded FETs under different DC voltages
50. A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility
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