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5. Pure spin current generation with photogalvanic effect in graphene interconnect junctions

Author

Zhou Yan-Hong, Yu Shaohui, Li Yuejun, Luo Xin, Zheng Xiaohong, and Zhang Lei

Subjects
density functional theory, graphene, photon, pure spin current, spintronics, Physics, QC1-999
Abstract

We investigate the photovoltaic behaviors of magnetic graphene interconnect junctions, which are constructed by zigzag graphene nanoribbons (ZGNRs), with the aim to produce pure spin current by photogalvanic effect (PGE). Two kinds of interconnect junctions are designed by connecting two 6-ZGNR with a carbon hexagon (C6) and a carbon tetragon (C4), respectively. It is found that zero charge current is produced under irradiation of light in both structures due to the presence of spatial inversion symmetry. Nevertheless, behind the zero charge current, net pure spin current is produced in the structure with a C6, but not in the structure with a C4. This difference originates from their different edge state distribution and different spatial inversion symmetry of the spin density. However, interestingly, local edge pure spin current can be obtained in both structures. More importantly, the pure spin current generation is independent of the photon energy, polarization type or polarization angle, suggesting a robust way of generating pure spin current with PGE and new possibility of graphene’s applications in spintronics.

Published
2021
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10. Three Uncertainty Measures in Neighborhood Systems

Author

Zhou, Yan-hong, Mo, Zhi-wen, Zhang, Xian-yong, Kacprzyk, Janusz, Series editor, Pal, Nikhil R., Advisory editor, Bello Perez, Rafael, Advisory editor, Corchado, Emilio S., Advisory editor, Hagras, Hani, Advisory editor, Kóczy, László T., Advisory editor, Kreinovich, Vladik, Advisory editor, Lin, Chin-Teng, Advisory editor, Lu, Jie, Advisory editor, Melin, Patricia, Advisory editor, Nedjah, Nadia, Advisory editor, Nguyen, Ngoc Thanh, Advisory editor, Wang, Jun, Advisory editor, and Cao, Bing-Yuan, editor

Published
2018
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11. Current rectification by asymmetric molecules: An ab initio study

Author

Zhou, Yan-hong, Zheng, Xiao-hong, Xu, Ying, and Zeng, Zhao Yang

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Disordered Systems and Neural Networks
Abstract

We study current rectification effect in an asymmetric molecule HOOC-C$_6$H$_4$-(CH$_2$)$_n$ sandwiched between two Aluminum electrodes using an {\sl ab initio} nonequilibrium Green function method. The conductance of the system decreases exponentially with the increasing number $n$ of CH$_2$. The phenomenon of current rectification is observed such that a very small current appears at negative bias and a sharp negative differential resistance at a critical positive bias when $n\ge 2$. The rectification effect arises from the asymmetric structure of the molecule and the molecule-electrode couplings. A significant rectification ratio of $\sim$38 can be achieved when $n=5$., Comment: to appear in J. Chem. Phys

Published
2006
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12. Effects of relative orientation of the molecules on electron transport in molecular devices

Author

Zhou, Yan-Hong, Zheng, Xiao-Hong, Xu, Ying, Zeng, Zhao Yang, and Zeng, Zhi

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Effects of relative orientation of the molecules on electron transport in molecular devices are studied by non-equilibrium Green's function method based on density functional theory. In particular, two molecular devices, with the planer Au$_{7}$ and Ag$_{3}$ clusters sandwiched between the Al(100) electrodes are studied. In each device, two typical configurations with the clusters parallel and vertical to the electrodes are considered. It is found that the relative orientation affects the transport properties of these two devices completely differently. In the Al(100)-Au$_7$-Al(100) device, the conductance and the current of the parallel configuration are much larger than those in the vertical configuration, while in the Al(100)-Ag$_{3}$-Al(100) device, an opposite conclusion is obtained.

Published
2006
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16. High Tunneling Electroresistance in Ferroelectric Tunnel Junctions Based on 2-D Bilayer Ferroelectric CuInP₂Se₆/Ga₂O₃ van der Waals Heterostructure

Author

Lei, Leitao, Zheng, Xiaohong, Zhou, Yan-Hong, and Chen, Ke-Qiu

Abstract

Giant tunneling electroresistance (TER) has been realized via manipulating the electric polarization direction of the ferroelectric material in van der Waals heterostructure (vdWH) ferroelectric tunnel junctions (FTJs) where the vdWH is constructed by combining a ferroelectric material with a nonferroelectric material. In this work, we propose a new FTJ model by employing bilayer ferroelectric vdWH composed of two out-of-plane polarized ferroelectric materials. The 2-D ferroelectric materials CuInP2Se6 and Ga2O3, which both have two opposite polarization states P $\uparrow $ and P $\downarrow $ , are selected as an example to form the bilayer ferroelectric vdWHs and the corresponding FTJs to validate our model. The energy bands of P $\uparrow \uparrow $ state of the vdWH indicate an insulating state with a bandgap of 0.634 eV, while that of the P $\downarrow \downarrow $ state is zero, resulting in a metallic behavior, so a robust ferroelectric polarization-controlled switch behavior between the high conductance state in P $\downarrow \downarrow $ state and the low conductance state in P $\uparrow \uparrow $ state in CuInP2Se6/Ga2O3 vdWH is obtained. Then, based on this vdWH, a 2-D transverse FTJ with P $\uparrow \uparrow $ or P $\downarrow \downarrow $ state’s vdWH as the tunneling barrier and (Ga0.75Sn0.25)2O3 monolayer (exhibiting n-type doping) as electrodes is designed. The TER ratio as high as 106% can be achieved in the FTJ. An analysis via the work function model, charge redistribution, and local density of state (LDOS) is performed to analyze the above phenomena. Our work provides a feasible method to design high-performance FTJs with 2-D bilayer ferroelectric vdWHs and suggests the great potential of specific CuInP2Se6/Ga2O3 vdWH in the design of high-performance FTJs and the application in high-density nonvolatile memory devices.

Published
2024
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25. High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In2Se3/MoTe2 van der Waals heterostructures.

Author

Lei, Leitao, Zhou, Yan-Hong, Zheng, Xiaohong, Wan, Wenqiang, and Wang, Weiyang

Abstract

Ferroelectric polarization-controlled band alignment can be realized in van der Waals heterostructures (vdWHs), which can be used to create new types of ferroelectric tunnel junctions (FTJs). In this work, we design six probable configurations of two-dimensional vdWHs based on a two-dimensional α-In2Se3 ferroelectric material which has two opposite polarization states P↑ and P↓, and the semiconductor MoTe2. First-principles calculations show robust ferroelectric polarization-controlled switching behavior between the high conductance state in configuration AA-P↓ and the low conductance state in configuration AA-P↑ in the most stable AA stacked vdWHs. Based on this vdWH, a two-dimensional transverse FTJ with AA-P↓ or AA-P↑ as the tunneling barrier and (In0.5Sn0.5)2Se3 monolayers (n-type doped) as electrodes is designed. The tunneling electroresistance ratio of the FTJs at the Fermi level reaches 1.22 × 104% when the tunneling barrier contains two repeating units N = 2 and can be greatly increased by increasing the thickness of the ferroelectric layer. Analysis of the work function, charge redistribution, and local density of states is performed to interpret the above phenomena. The findings suggest the great potential of the AA stacked α-In2Se3/MoTe2 vdWH in the design of high-performance FTJs and application in high-density non-volatile memory devices. [ABSTRACT FROM AUTHOR]

Published
2024
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26. Transitory presence of myeloid-derived suppressor cells in neonates is critical for control of inflammation

Author

He, Yu-Mei, Li, Xing, Perego, Michela, Nefedova, Yulia, Kossenkov, Andrew V, Jensen, Erik A, Kagan, Valerian, Liu, Yu-Feng, Fu, Shu-Yu, Ye, Qing-Jian, Zhou, Yan-Hong, Wei, Lai, Gabrilovich, Dmitry I, and Zhou, Jie

Subjects
Prevention, Physiological aspects, Development and progression, Genetic aspects, Research, Inflammation -- Development and progression -- Genetic aspects -- Prevention -- Research, Stem cells -- Physiological aspects -- Genetic aspects -- Research
Abstract

Author(s): Yu-Mei He [1, 2]; Xing Li [1, 2, 3]; Michela Perego [4]; Yulia Nefedova [4]; Andrew V Kossenkov [4]; Erik A Jensen [5]; Valerian Kagan [6]; Yu-Feng Liu [1]; [...]

Published
2018
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