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Oxide-based binary resistive switching memories using metal nitride as one of the electrodes usually have a limited ratio of the resistances of the high- and low-resistance states. Here, we propose a competing mechanism to enhance the switching ratio by modifying the high-resistance state with extra inherent interfacial oxygen diffusion against what happens at the oxide/nitride interface. This is implemented in Pt/ZrO2/Ta2O5/TaN bilayer structures, where a resistance ratio above 104, about one to two orders of magnitude greater than that in Pt/Ta2O5/TaN monolayer structures, is achieved. This competing mechanism is further corroborated by the failed enhancement in the switching ratio when using an altered stacking arrangement of the two oxide layers. [ABSTRACT FROM AUTHOR]

In this work, we present light-controlled resistive switches with p-Si/HfO2/Pt structures, in which the resistance can be controlled by a combination of electrical pulses and light. The devices have a large switching ratio (over 104) and good uniformity. Connecting two devices with a conventional resistor enables one to implement light-controlled material implication (IMP). Based on the light-controlled IMP logic, light-controlled NAND and light-controlled OR logic operations were also executed in the same devices. [ABSTRACT FROM AUTHOR]

Abstract: Experiments on uniaxial and triaxial rock mechanics and rock acoustic emissions have been conducted for research on the impact of rock anisotropy on the development of the fractures of different directions by taking as an example the ultra-low-permeability sandstone reservoir in the Upper Triassic Yanchang Formation within the Ordos Basin. The experimental results prove the existence of anisotropy of the rock mechanical property in the different directions on the plane, which is the chief reason for the production of impacts on the development of different assemblages of fractures in the geological periods. The rock anisotropy usually restricts the development of one assemblage of conjugate shear fractures. The fractures in the Yanchang Formation within the Ordos Basin are mainly shear fractures that formed under two tectonic actions. Theoretically, here, four assemblages of shear fractures should have developed, but due to the effect of a strong rock anisotropy, in each period one assemblage of fractures chiefly developed. Thus, two assemblages of fractures are usually developed in every part at present. [Copyright &y& Elsevier]