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The effective detection of X-ray radiation with low threshold is essential to many medical and industrial applications. Three-dimensional (3D) organolead trihalide and double perovskites have been shown to be suitable for direct X-ray detection. However, the sensitivity and stability of 3D perovskite X-ray detectors are limited by ion motion, and there remains a demand to develop green and stable X-ray detectors with high sensitivity and low detection limit. The emerging low-dimensional perovskites have shown promising optoelectronic properties, featuring good intrinsic stability and reduced ion migration. Inspired by this, we show that our 2D layered perovskite-like (NH4)3Bi2I9 device provides unique anisotropic X-ray detecting performance with different crystal directions, effective suppression of ion migration and a low detection limit of 55 nGyair s−1. These results will motivate new strategies to achieve a high-performance X-ray detector by utilizing 2D layered perovskite or perovskite-like materials, without requiring toxic elements. Perovskite-like materials enable different X-ray detection performance along different crystal directions. A low detection limit of 55 nGyair s−1 is demonstrated. [ABSTRACT FROM AUTHOR]

The emerging two-dimensional (2D) van der Waals (vdW) materials and their heterostructures hold great promise for optoelectronics and photonic applications beyond strictly lattice-matching constraints and grade interfaces. However, previous photodetectors and optoelectronic devices rely on relatively simple vdW heterostructures with one or two blocks. The realization of high-order heterostructures has been exponentially challenging due to conventional layer-by-layer arduous restacking or sequential synthesis. In this study, we present an approach involving the direct exfoliation of high-quality BiI 3 -BiI heterostructure nanosheets with alternating blocks, derived from solution-grown binary heterocrystals. These heterostructure-based photodetectors offer several notable advantages. Leveraging the "active layer energetics" of BiI layers and the establishment of a significant depletion region, our photodetector demonstrates a significant reduction in dark current compared with pure BiI 3 devices. Specifically, the photodetector achieves an extraordinarily low dark current (<9.2 × 10 -14 A at 5 V bias voltage), an impressive detectivity of 8.8 × 10 12 Jones at 638 nm, and a rapid response time of 3.82 μs. These characteristics surpass the performance of other metal-semiconductor-metal (MSM) photodetectors based on various 2D materials and structures at visible wavelengths. Moreover, our heterostructure exhibits a broad-band photoresponse, covering the visible, near-infrared (NIR)-I, and NIR-II regions. In addition to these promising results, our heterostructure also demonstrated the potential for flexible and imaging applications. Overall, our study highlights the potential of alternating vdW heterostructures for future optoelectronics with low power consumption, fast response, and flexible requirements.

This paper reports the dynamic characteristics of sequential energy transfer up-conversion processes in Yb 3+ /Er 3+ :SrMoO 4 crystal. A general method based on the emission intensity has been developed to calculate the nonradiative decay rate. A new macroscopic theory has been developed to calculate the energy transfer parameters based on the crystal structure. According to both new calculating methods, the spectral parameters of Yb 3+ /Er 3+ :SrMoO 4 crystal were calculated, such as up-conversion luminescent quantum efficiencies and threshold pump powers. Both calculating methods may be applied to calculate the spectral parameters of the laser crystal materials.