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We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may be attributed to increased charge carrier density in the channel and thus reduced saturation velocity due to carrier-carrier scattering.

The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design (TCAD) modeling platform calibrated against experimental measurements. Two-dimensional hydrodynamic simulations are combined with 1-D full-band, atomistic quantum transport calculations to shed light on future DHBT generations whose dimensions are decreased step-by-step, starting from the current device configuration. Simulations predict that a peak transit frequency $f_{T,peak}$ of around 1.6 THz could be reached in aggressively scaled type-II DHBTs with a total thickness of 256 nm and an emitter width $W_E$ of 37.5 nm. The corresponding breakdown voltage $BV_{CEO}$ is estimated to be 2.2 V. The investigations are put in perspective with two DHBT performance limiting factors, self-heating and breakdown characteristics., Comment: 10 pages, 11 figures

This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~300GHz and ~400GHz, respectively. Thermal coupling parameters are extracted using three dimensional (3D) thermal TCAD simulations. The obtained parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between emitter fingers. Very good agreement is achieved between circuit simulations and DC measurements carried out on an in house designed test structure., Comment: Preprint, submitted to EDSSC 2013

This paper describes a new and simple approach to accurately characterize the transient self-heating effect in Si-Ge Heterojunction Bipolar Transistors (HBTs), based on pulse measurements and verified through transient electro-thermal simulations. The measurements have been carried out over pulses applied at Base and Collector terminals simultaneously and the time response of Collector current increase due to self-heating effect are obtained. Compared to previous approach, a complete calibration has been performed including all the passive elements such as coaxial cables, connectors and bias network. Furthermore, time domain junction temperature variations, current of heat flux and lattice temperature distribution have been obtained numerically by means of 3D electro-thermal device simulations. The thermal parameters extracted from measurements using HiCuM HBT compact model have been verified with the parameters extracted from electro-thermal transient simulation. It has been shown that, the standard R-C thermal network is not sufficient to accurately model the thermal spreading behavior and therefore a recursive network has been employed which is more physical and suitable for transient electro-thermal modeling.