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Operando optical microscopy enables imaging at the interface between the Zn electrode and the electrolyte of 1 M ZnSO4(aq) in the symmetrical Zn/Zn cells assembled as the pouch cells with the mechanical load of 0.8 MPa. The imaging was executed during cycling of Zn plating and stripping at the different current densities of 0.5, 1.0, 2.0, and 4.0 mA cm−2, and the areal capacity of 2 mAh·cm−2. When the current densities are below 4.0 mA cm−2, no intense Zn dendrites are observed. However, at 4.0 mA cm−2, the severe Zn dendrites can penetrate through the separator and cause short-circuiting. From the electrochemical perspective, the voltage profile of such system drops to almost zero volt. Both operando optical and ex-situ synchrotron X-ray imaging further prove the appearance of the Zn dendrites. By Raman spectroscopy and X-ray diffraction, the cycled Zn electrode surface contains passivation species of Zn4(OH)6SO4, ZnO, and Zn(OH)2 that could limit the active surface area for the Zn plating/stripping, accelerating the localized current density and favoring the growth of Zn dendrites. With the SiO2 additive of 0.5% w/v in 1 M ZnSO4(aq), the severe Zn dendrites disappear, as well as the cycled Zn/electrolyte interface becomes close to the pristine state; low degree of the Zn electrode roughness and the Zn surface passivation is noticed. The appearance of the claimed Zn surface morphology was also confirmed by Scanning Electron Microscopy (SEM). In turn, too low or too high SiO2 content in the electrolyte does not generate desirable effects. A high level of Zn dendrites and short circuiting are still recognized. Hence, both the operando and ex-situ characterizations can mutually validate the phenomena at the Zn/electrolyte interface.

Operando optical microscopy enables imaging at the interface between the Zn electrode and the electrolyte of 1 M ZnSO 4 (aq) in the symmetrical Zn/Zn cells assembled as the pouch cells with the mechanical load of 0.8 MPa. The imaging was executed during cycling of Zn plating and stripping at the different current densities of 0.5, 1.0, 2.0, and 4.0 mA cm -2 , and the areal capacity of 2 mAh·cm -2 . When the current densities are below 4.0 mA cm -2 , no intense Zn dendrites are observed. However, at 4.0 mA cm -2 , the severe Zn dendrites can penetrate through the separator and cause short-circuiting. From the electrochemical perspective, the voltage profile of such system drops to almost zero volt. Both operando optical and ex-situ synchrotron X-ray imaging further prove the appearance of the Zn dendrites. By Raman spectroscopy and X-ray diffraction, the cycled Zn electrode surface contains passivation species of Zn 4 (OH) 6 SO 4 , ZnO, and Zn(OH) 2 that could limit the active surface area for the Zn plating/stripping, accelerating the localized current density and favoring the growth of Zn dendrites. With the SiO 2 additive of 0.5% w/v in 1 M ZnSO 4 (aq), the severe Zn dendrites disappear, as well as the cycled Zn/electrolyte interface becomes close to the pristine state; low degree of the Zn electrode roughness and the Zn surface passivation is noticed. The appearance of the claimed Zn surface morphology was also confirmed by Scanning Electron Microscopy (SEM). In turn, too low or too high SiO 2 content in the electrolyte does not generate desirable effects. A high level of Zn dendrites and short circuiting are still recognized. Hence, both the operando and ex-situ characterizations can mutually validate the phenomena at the Zn/electrolyte interface., Competing Interests: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper., (© 2023 The Authors.)