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We report resonant inelastic X-ray scattering (RIXS) measurements on the prototypical hexagonal boron nitride hBN layered compound. The RIXS results at the B and N K edges have been combined with electron energy loss spectroscopy (EELS) experiments and ab initio calculations within the framework of the Bethe-Salpeter equation of many-body perturbation theory. By means of this tight interplay of different spectroscopies, the lowest longitudinal exciton of hBN has been identified. Moreover, its qualitatively different dispersions along the $\Gamma$K and the $\Gamma$M directions of the Brillouin zone have been determined. Our study advocates soft X-ray RIXS and EELS to be a promising combination to investigate electronic excitations in materials.

We investigate the Cr electronic structure and excitations in CrSBr, a layered magnetic semiconductor, using a combination of resonant x-ray spectroscopic techniques. X-ray absorption spectroscopy (XAS) and resonant inelastic x-ray scattering (RIXS) spectra collected at the Cr $L_{2,3}$ edges reveal significant linear dichroism, which arises from the distorted octahedral environment surrounding the Cr$^{3+}$ ions. The origin of the bright excitons observed in this compound is examined through a comparison of the d-d excitations identified in the RIXS spectra, the x-ray excited optical luminescence (XEOL) spectra, and previously reported optical spectroscopic and theoretical studies. To further understand these phenomena, we develop a multiplet model based on a crystal electric field (CEF) approach that accounts for the local environment of Cr ions. This model successfully reproduces several experimental features, while also suggesting strong hybridization effects between Cr $3\textit{d}$ orbitals and ligands that are not fully captured by the present framework. These findings advance our understanding of the electronic structure and excitonic behavior in CrSBr and provide a foundation for future $\textit{in-situ}$ and $\textit{operando}$ studies of CrSBr-based devices for spintronic and optoelectronic applications., Comment: 10 pages, 10 figures

Recent advances in the characterization of hexagonal-diamond silicon (2H-Si) have shown that this material possesses remarkably different structural, electronic, and optical properties as compared to the common cubic-diamond (3C) polytype. Interestingly, despite the wide range of physical properties analyzed, to date no study has investigated impurity energy levels in 2H-Si. Here, we present results of ab initio DFT simulations to describe the effect of p- and n-type substitutional doping on the structural and electronic properties of hexagonal-diamond Si (2H-Si). We first provide a detailed analysis of how a given impurity can assume a different local symmetry depending on the host crystal phase. Then, by studying neutral and charged dopants, we carefully estimate donors and acceptors transition energy levels in 2H-Si and compare them with the cubic-diamond (3C) case. In the case of acceptors, the formation energy is always lower in 2H-Si and is associated with a shallower charge transition level with respect to 3C-Si. On the other hand, donors prefer the cubic phase and have transition energies smaller with respect to 2H-Si. Finally, by employing a simple model based on the 2H/3C band offset diagram, we prove the physical validity of our findings and we show how holes can be used to stabilize the 2H-Si phase. Overall, the described doping properties represent a robust starting point for further theoretical and experimental investigations., Comment: 26 pages, 4 figures

Moir\'{e} twist angle underpins the interlayer interaction of excitons in twisted van der Waals hetero- and homo-structures. The influence of twist angle on the excitonic absorption of twisted bilayer tungsten diselenide (WSe$_{2}$) has been investigated using electron energy-loss spectroscopy. Atomic-resolution imaging by scanning transmission electron microscopy was used to determine key structural parameters, including the nanoscale measurement of the relative twist angle and stacking order. Detailed spectral analysis revealed a pronounced blueshift in the high-energy excitonic peak C with increasing twist angle, up to 200 meV when compared to the AA$^{\prime}$ stacking. The experimental findings have been discussed relative to first-principle calculations of the dielectric response of the AA$^{\prime}$ stacked bilayer WSe$_{2}$ as compared to monolayer WSe$_{2}$ by employing the \textit{GW} plus Bethe-Salpeter equation (BSE) approaches, resolving the origin of higher energy spectral features from ensembles of excitonic transitions, and thus any discrepancies between previous calculations. Furthermore, the electronic structure of moir\'{e} supercells spanning twist angles of $\sim$9.5-46.5$^{\circ}$ calculated by density functional theory (DFT) were unfolded, showing an uplifting of the conduction band minimum near the $Q$ point and minimal change in the upper valence band concurrently. The combined experiment/theory investigation provides valuable insight into the physical origins of high-energy absorption resonances in twisted bilayers, which enables to track the evolution of interlayer coupling from tuning of the exciton C transitions by absorption spectroscopy.

The growth of controlled 1D carbon-based nanostructures on metal surfaces is a multistep process whose path, activation energies and intermediate metastable states strongly depend on the employed substrate. Whereas this process has been extensively studied on gold, less work has been dedicated to silver surfaces, which have a rather different catalytic activity. In this work, we present an experimental and theoretical investigation of the growth of poly-$p$-phenylene (PPP) chains and subsequent narrow graphene ribbons starting from 4,4''-dibromo-$p$-terphenyl molecular precursors deposited at the silver surface. By combing scanning tunneling microscopy (STM) imaging and density functional theory (DFT) simulations, we describe the molecular morphology and organization at different steps of the growth process and we discuss the stability and conversion of the encountered species on the basis of calculated thermodynamic quantities. Unlike the case of gold, at the debromination step we observe the appearance of organometallic molecules and chains, which can be explained by their negative formation energy in the presence of a silver adatom reservoir. At the dehydrogenation temperature the persistence of intercalated Br atoms hinders the formation of well-structured graphene ribbons, which are instead observed on gold, leading only to a partial lateral coupling of the PPP chains. We numerically derive very different activation energies for Br desorption from the Ag and Au surfaces, thereby confirming the importance of this process in defining the kinetics of the formation of molecular chains and graphene ribbons on different metal surfaces.

Folded regions are commonly encountered in a number of hexagonal boron nitride (h-BN) based bulk and nanostructured materials. Two types of structural modifications occur in folded h-BN layers: local curvature at the folded edges and interlayer shear of the layers which changes the stacking of the overlapping flat regions. In this work we discuss, via density functional theory simulations, the impact of these structural modifications on the ground state electronic structure of the pristine monolayer. We show that, depending on the fold orientation, the overlapping region might present different stacking configurations with subsequent variations of the fundamental band gap; further gap changes occur at the folded regions. The overall electronic structure of a BN folded monolayer can finally be described as a type-II junction between two wide gap semiconductors located at the curved and flat overlapping zones.

Following the lifespan of optical excitations from their creation to decay into photons is crucial in understanding materials optical properties. Macroscopically, techniques such as the photoluminescence excitation spectroscopy provide unique information on the photophysics of materials with applications as diverse as quantum optics or photovoltaics. Materials excitation and emission pathways are affected by nanometer scale variations directly impacting devices performances. However, they cannot be directly accessed, despite techniques, such as optical spectroscopies with free electrons, having the relevant spatial, spectral or time resolution. Here, we explore optical excitation creation and decay in two representative optical devices: plasmonic nanoparticles and luminescent 2D layers. The analysis of the energy lost by an exciting electron that is coincident in time with a visible-UV photon unveils the decay pathways from excitation towards light emission. This is demonstrated for phase-locked interactions, such as in localized surface plasmons, and non-phase-locked ones, such as the light emission by individual point defects. This newly developed cathodoluminescence excitation spectroscopy images energy transfer pathways at the nanometer scale. It widens the toolset available to explore nanoscale materials.

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of the electronic and optical properties of h-BN and the impact of various structural defects. Despite the large efforts in the last years, aspects such as the electronic band gap value, the exciton binding energy and the effect of point defects remained elusive, particularly when considering a single monolayer. Here, we directly measured the density of states of a single monolayer of h-BN epitaxially grown on highly oriented pyrolytic graphite, by performing low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The observed h-BN electronic band gap on defect-free regions is $(6.8\pm0.2)$ eV. Using optical spectroscopy to obtain the h-BN optical band gap, the exciton binding energy is determined as being of $(0.7\pm0.2)$ eV. In addition, the locally excited cathodoluminescence and photoluminescence show complex spectra that are typically associated to intragap states related to carbon defects. Moreover, in some regions of the monolayer h-BN we identify, using STM, point defects which have intragap electronic levels around 2.0 eV below the Fermi level., Comment: 50 Pages, 8 Figures, 100+ references

Structural, electronic, and chemical nanoscale modifications of transition metal dichalcogenide monolayers alter their optical properties, including the generation of single photon emitters. A key missing element for complete control is a direct spatial correlation of optical response to nanoscale modifications, due to the large gap in spatial resolution between optical spectroscopy and nanometer resolved techniques, such as transmission electron microscopy or scanning tunneling microscopy. Here, we bridge this gap by obtaining nanometer resolved optical properties using electron spectroscopy, specifically electron energy loss spectroscopy (EELS) for absorption and cathodoluminescence (CL) for emission, which were directly correlated to chemical and structural information. In an h-BN/WS$_2$/h-BN heterostructure, we observe local modulation of the trion (X$^{-}$) emission due to tens of nanometer wide dielectric patches, while the exciton, X$_A$, does not follow the same modulation. Trion emission also increases in regions where charge accumulation occurs, close to the carbon film supporting the heterostructures. Finally, localized exciton emission (L) detection is not correlated to strain variations above 1 $\%$, suggesting point defects might be involved in their formations.

Over the last few years, group IV hexagonal-diamond type crystals have acquired great attention in semiconductor physics thanks to the appearance of novel and very effective growth methods. However, many questions remain unaddressed on their extrinsic doping capability and on how it compares to those of diamond-like structures. This point is here investigated through numerical simulations conducted in the framework of the Density Functional Theory (DFT). The comparative analysis for group III and V dopant atoms shows that: i) in diamond-type crystals the bulk sites symmetry ($T_d$) is preserved by doping while in hexagonal crystals the impurity site moves towards a higher ($T_d$) or lower ($C_{3v}$) symmetry configuration dependently on the valence of the dopant atoms; ii) for Si and Ge, group III impurities can be more easily introduced in the hexagonal-diamond phase, whose local $C_{3v}$ symmetry better accommodates the three-fold coordination of the impurity, while n-type impurities do not reveal any marked phase preference; iii) for C, both n and p dopants are more stable in the hexagonal-diamond structure than in the the cubic one, but this tendency is much more pronounced for n-type impurities.

The evolution of the scanning modules for scanning transmission electron microscopes (STEM) has realized the possibility to generate arbitrary scan pathways, an approach currently explored to improve acquisition speed and to reduce electron dose effects. In this work, we present the implementation of a random scan operating mode in STEM achieved at the hardware level via a custom scan control module. A pre-defined pattern with fully shuffled raster order is used to sample the entire region of interest. Subsampled random sparse images can then be extracted at successive time frames, to which suitable image reconstruction techniques can be applied. With respect to the conventional raster scan mode, this method permits to limit dose accumulation effects, but also to decouple the spatial and temporal information in hyperspectral images. We provide some proofs of concept of the flexibility of the random scan operating mode, presenting examples of its applications in different spectro-microscopy contexts: atomically-resolved elemental maps with electron energy loss spectroscopy and nanoscale-cathodoluminescence spectrum images. By employing adapted post-processing tools, it is demonstrated that the method allows to precisely track and correct for sample instabilities and to follow spectral diffusion with a high spatial localization.

Vibrational optical spectroscopies can be enhanced by surface plasmons to reach molecular-sized limits of detection and characterization. The level of enhancement strongly depends on microscopic details of the sample that are generally missed by macroscopic techniques. Here we investigate phonons in h-BN by coupling them to silver-nanowire plasmons, whose energy is tuned by modifying the nanowire length. Specifically, we use electron beam milling to accurately and iteratively change the nanowire length, followed by electron energy-loss spectroscopy to reveal the plasmon-enhanced vibrational features of h-BN. This allows us to investigate otherwise hidden bulk phonons and observe strong plasmon-phonon coupling. The new milling-and-spectroscopy technique holds great potential for resolving vibrational features in material nanostructures.

We report a comprehensive study on the optical properties of cubic boron nitride (c-BN) and its optically active defects. Using electron energy-loss spectroscopy (EELS) within a monochromated scanning transmission electron microscope (STEM) on the highest-quality crystals available, we demonstrate unequivocally that the optical-gap energy of c-BN slightly exceeds 10 eV. Further theoretical analysis in the framework of the Bethe-Salpeter equation of many-body perturbation theory supports this result. The spatial localization of defect-related emissions has been investigated using nanometric resolved cathodoluminescence (nano-CL) in a STEM. By high-temperature annealing a c-BN powder, we have promoted phase transitions in nanometric domains which have been detected by the appearance of specific hexagonal-phase signatures in both EELS and CL spectra. A high number of intragap optically active centers are known in c-BN, but the literature is rather scattered and hence has been summarized here. For several emission lines we have obtained nano-CL maps which show emission spot sizes as small as few tens of nanometers. Finally, by coupling nano-CL to a Hanbury-Brown-Twiss intensity interferometer, we have addressed individual spots in order to identify the possible presence of single-photon sources. The observed CL bunching effect is compatible with a limited set of single-photon emitters and it permits obtaining emission lifetimes of the order of the nanosecond.

The type and distribution of oxygen functional groups in graphene oxide (GO) and reduced graphene oxide (RGO) remain still a subject of great debate. Local analytic techniques are required to access the chemistry of these materials at a nanometric scale. Electron energy loss spectroscopy in a scanning transmission electron microscope can provide the suitable resolution, but GO and RGO are extremely sensitive to electron irradiation. In this work we employ a dedicated experimental setup to reduce electron illumination below damage limit. GO oxygen maps obtained at a few nanometers scale show separated domains with different oxidation levels. The C/O ratio varies from about 4:1 to 1:1, the latter corresponding to a complete functionalization of the graphene flakes. In RGO the residual oxygen concentrates mostly in regions few tens nanometers wide. Specific energy-loss near-edge structures are observed for different oxidation levels. By combining these findings with first-principles simulations we propose a model for the highly oxidized domains where graphene is fully functionalized by hydroxyl groups forming a 2D-sp$^3$ carbon network analogous to that of graphane.

It has been recently demonstrated that the magnetic state of FeRh can be controlled by electric fields in FeRh/BaTiO$_{\text{3}}$ heterostructures [R.O. Cherifi et al. Nature Mater. 13, 345 (2014)]. Voltage-controlled changes in the ferroelastic domain structure of BaTiO$_3$ appeared to drive this effect, with charge accumulation and depletion due to ferroelectricity playing a more elusive role. To make this electric-field control of magnetic order non-volatile, the contribution of ferroelectric field-effect must be further enhanced, which requires understanding the details of the interface between FeRh and BaTiO$_3$. Here we report on the atomic structure and electron screening at this interface through density functional theory simulations. We relate different screening capabilities for the antiferromagnetic and ferromagnetic states of FeRh to different density of states at the Fermi level of corresponding bulk structures. We predict that the stability of the ferroelectric state in adjacent very thin BaTiO$_3$ films will be affected by magnetic order in FeRh. This control of ferroelectricity by magnetism can be viewed as the reciprocal effect of the voltage-controlled magnetic order previously found for this system.

Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic order and magnetization direction at the nanoscale with a voltage. We use element-specific x-ray imaging to map the magnetic domains as a function of temperature and voltage in epitaxial FeRh on ferroelastic BaTiO3. Exploiting the nanoscale phase-separation of FeRh, we locally interconvert between ferromagnetism and antiferromagnetism with a small electric field just above room temperature. Our results emphasize the importance of nanoscale ferroic domain structure to achieve enhanced coupling in artificial multiferroics.

The effect of nanocrystal orientation on the energy loss spectra of monoclinic hafnia (m-HfO$_2$) is measured by high resolution transmission electron microscopy (HRTEM) and valence energy loss spectroscopy (VEELS) on high quality samples. For the same momentum-transfer directions, the dielectric properties are also calculated ab initio by time-dependent density-functional theory (TDDFT). Experiments and simulations evidence anisotropy in the dielectric properties of m-HfO$_2$, most notably with the direction-dependent oscillator strength of the main bulk plasmon. The anisotropic nature of m-HfO$_2$ may contribute to the differences among VEELS spectra reported in literature. The good agreement between the complex dielectric permittivity extracted from VEELS with nanometer spatial resolution, TDDFT modeling, and past literature demonstrates that the present HRTEM-VEELS device-oriented methodology is a possible solution to the difficult nanocharacterization challenges given in the International Technology Roadmap for Semiconductors., Comment: 5 pages, 3 figures

Substitutional tungsten doping of VO$_{\text{2}}$ thin films and its effect on the metal-to-insulator transition are investigated by means of X-ray diffraction, Cs-corrected scanning transmission electron microscope (STEM) and ab-initio simulations. The W$_{\text{0.02}}$V$_{\text{0.98}}$O$_{\text{2}}$ thin films deposited on (001) sapphire are studied in both planar and transverse geometries. The tungsten atoms are distinguishable from the V atoms in the Z-sensitive high angle annular dark field (HAADF) STEM image and their nature is further confirmed by electron energy loss spectroscopy (EELS). The W dopants are found to substitute in the V sites and form local clusters at first neighbour, preferentially along the <010>$_{\text{R}}$ directions. Ab-initio modeling for this 2 at.% W doped VO$_{\text{2}}$ confirms the experimentally found W clustering mechanism to be the most stable substitutional configuration and it demonstrates that the binding energy of such cluster is 0.18 eV. Driving forces for short range ordering are also obtained along the <011>$_{\text{R}}$ and <110>$_{\text{R}}$ directions. Strong energetic penalty is found for the <001>$_{\text{R}}$ direction. Simulations indicate that the clustering helps in stabilizing the tetragonal structure, while a diluted W dopant induces more structural distortion and V-V pairing.This suggests that the clustering mechanism plays a critical role in the transition temperature evolution with the W dopants.

The strong excitonic emission at 5.75 eV of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect monocrystals that are extremely hard to synthesize, while regular h-BN samples present a complex emission spectrum with several additional peaks. The microscopic origin of these additional emissions has not yet been understood. In this work we address this problem using an experimental and theoretical approach that combines nanometric resolved cathodoluminescence, high resolution transmission electron microscopy and state of the art theoretical spectroscopy methods. We demonstrate that emission spectra are strongly inhomogeneus within individual flakes and that additional excitons occur at structural deformations, such as faceted plane folds, that lead to local changes of the h-BN stacking order.

Conventional three-dimensional crystal lattices are terminated by surfaces, which can demonstrate complex rebonding and rehybridisation, localised strain and dislocation formation. Two dimensional crystal lattices, of which graphene is the archetype, are terminated by lines. The additional available dimension at such interfaces opens up a range of new topological interface possibilities. We show that graphene sheet edges can adopt a range of topological distortions depending on their nature. Rehybridisation, local bond reordering, chemical functionalisation with bulky, charged, or multi-functional groups can lead to edge buckling to relieve strain, folding, rolling and even tube formation. We discuss the topological possibilities at a 2D graphene edge, and under what circumstances we expect different edge topologies to occur. Density functional calculations are used to explore in more depth different graphene edge types., Comment: Additional figure in published version

The density functional tight binding approach (DFTB) is well adapted for the study of point and line defects in graphene based systems. After briefly reviewing the use of DFTB in this area, we present a comparative study of defect structures, energies and dynamics between DFTB results obtained using the dftb+ code, and density functional results using the localised Gaussian orbital code, AIMPRO. DFTB accurately reproduces structures and energies for a range of point defect structures such as vacancies and Stone-Wales defects in graphene, as well as various unfunctionalised and hydroxylated graphene sheet edges. Migration barriers for the vacancy and Stone-Wales defect formation barriers are accurately reproduced using a nudged elastic band approach. Finally we explore the potential for dynamic defect simulations using DFTB, taking as an example electron irradiation damage in graphene.

We demonstrate that free graphene sheet edges can curl back on themselves,reconstructing as nanotubes. This results in lower formation energies than any other non-functionalised edge structure reported to date in the literature. We determine the critical tube size and formation barrier and compare with density functional simulations of other edge terminations including a new reconstructed Klein edge. Simulated high resolution electron microscopy images show why such rolled edges may be difficult to detect. Rolled zigzag edges serve as metallic conduction channels, separated from the neighbouring bulk graphene by a chain of insulating sp$^3$-carbon atoms, and introduce Van Hove singularities into the graphene density of states., Comment: To appear in Phys. Rev. Lett

We present a density functional theory study on the shape and arrangement of small BN domains embedded into single-walled carbon nanotubes. We show a strong tendency for the BN hexagons formation at the simultaneous inclusion of B and N atoms within the walls of carbon nanotubes. The work emphasizes the importance of a correct description of the BN-C frontier. We suggest that BN-C interface will be formed preferentially with the participation of N-C bonds. Thus, we propose a new way of stabilizing the small BN inclusions through the formation of nitrogen terminated borders. The comparison between the obtained results and the available experimental data on formation of BN plackets within the single walled carbon nanotubes is presented. The mirror situation of inclusion of carbon plackets within single walled BN nanotubes is considered within the proposed formalism. Finally, we show that the inclusion of small BN plackets inside the CNTs strongly affects the electronic character of the initial systems, opening a band gap. The nitrogen excess in the BN plackets introduces donor states in the band gap and it might thus result in a promising way for n-doping single walled carbon nanotubes.

We present a systematic study on the stability and the structural and electronic properties of mixed molybdenum-niobium disulphides. Using density functional theory we investigate bilateral doping with up to 25 % of MoS2 (NbS2) by Nb (Mo) atoms, focusing on the precise arrangement of dopants within the host lattices. We find that over the whole range of considered concentrations, Nb doping of MoS2 occurs through a substitutional mechanism. For Mo in NbS2 both interstitial and substitutional doping can co-exist, depending upon the particular synthesis conditions. The analysis of the structural and electronic modifications of the perfect bulk systems due to the doping is presented. We show that substitutional Nb atoms introduce electron holes to the MoS2, leading to a semiconductor-metal transition. On the other hand, the Mo doping of Nb2, does not alter the metallic behavior of the initial system. The results of the present study are compared with available experimental data on mixed MoS2-NbS2 (bulk and nanoparticles)., Comment: 7 pages, 6 figures

We show that electron irradiation in a dedicated scanning transmission microscope can be used as a nano-electron-lithography technique allowing the controlled reshaping of single walled carbon and boron nitride nanotubes. The required irradiation conditions have been optimised on the basis of total knock-on cross sections calculated within density functional based methods. It is then possible to induce morphological modifications, such as a change of the tube chirality, by removing severals tens of atoms with a nanometrical spatial resolution. These irradiation techniques could open new opportunities for nano-engeneering a large variety of nanostructured materials., Comment: article + supporting materials