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Artificial neuronal devices are the basic building blocks for neuromorphic computing systems, which have been motivated by realistic brain emulation. Aiming for these applications, various device concepts have been proposed to mimic the neuronal dynamics and functions. While till now, the artificial neuron devices with high efficiency, high stability and low power consumption are still far from practical application. Due to the special insulator-metal phase transition, Vanadium Dioxide (VO2) has been considered as an idea candidate for neuronal device fabrication. However, its intrinsic insulating state requires the VO2 neuronal device to be driven under large bias voltage, resulting in high power consumption and low frequency. Thus in the current study, we have addressed this challenge by preparing oxygen vacancies modulated VO2 film(VO2-x) and fabricating the VO2-x neuronal devices for Spiking Neural Networks (SNNs) construction. Results indicate the neuron devices can be operated under lower voltage with improved processing speed. The proposed VO2-x based back-propagation SNNs (BP-SNNs) system, trained with the MNIST dataset, demonstrates excellent accuracy in image recognition. Our study not only demonstrates the VO2-x based neurons and SNN system for practical application, but also offers an effective way to optimize the future neuromorphic computing systems by defect engineering strategy., Comment: 18 pages,4 figures

The mass storage and removal in solid conductors always played vital role on the technological applications such as modern batteries, permeation membranes and neuronal computations, which were seriously lying on the ion diffusion and kinetics in bulk lattice. However, the ions transport was kinetically limited by the low diffusional process, which made it a challenge to fabricate applicable conductors with high electronic and ionic conductivities at room temperature. It was known that at essentially all interfaces, the existed space charge layers could modify the charge transport, storage and transfer properties. Thus, in the current study, we proposed an acid solution/WO3/ITO structure and achieved an ultrafast hydrogen transport in WO3 layer by interfacial job-sharing diffusion. In this sandwich structure, the transport pathways of the protons and electrons were spatially separated in acid solution and ITO layer respectively, resulting the pronounced increasing of effective hydrogen diffusion coefficient (Deff) up to 106 times. The experiment and theory simulations also revealed that this accelerated hydrogen transport based on the interfacial job-sharing diffusion was universal and could be extended to other ions and oxide materials as well, which would potentially stimulate systematic studies on ultrafast mixed conductors or faster solid-state electrochemical switching devices in the future., Comment: 23 pages, 5 figures

Manipulating the strain induced poly-domains and phase transition in correlated oxide material are important for high performance devices fabrication. Though the electronic transport in the strained oxide film at macroscopic scales can be directly measured, the anisotropic electronic state and the controllable phase separation cross the insulator-to-metal transition within nanoscale size are still elusive. Here, we selected VO2 crystal film as a prototypical oxide and achieved the manipulation of anisotropy electronic phase separation via injecting He+ nanobeam into VO2 film at room temperature. In addition, this nanoscale phase separation was directly visualized by infrared near-field imaging measurements, showing the pronounced and unique cR-axis dependent anisotropy on VO2 surface. Our results offered new insights towards understanding the anisotropic nanoscale phase separation in strained metal oxide films., Comment: 15 pages,5 figures

Oxygen vacancies (VO), a common type of point defects in metal oxides materials, play important roles on the physical and chemical properties. To obtain stoichiometric oxide crystal, the pre-existing VO is always removed via careful post-annealing treatment at high temperature in air or oxygen atmosphere. However, the annealing conditions is difficult to control and the removal of VO in bulk phase is restrained due to high energy barrier of VO migration. Here, we selected VO2 crystal film as the model system and developed an alternative annealing treatment aided by controllable hydrogen doping, which can realizes effective removal of VO defects in VO2-{\delta} crystal at lower temperature. This finding is attributed to the hydrogenation accelerated oxygen vacancies recovery in VO2-{\delta} crystal. Theoretical calculations revealed that the H-doping induced electrons are prone to accumulate around the oxygen defects in VO2-{\delta} film, which facilitates the diffusion of VO and thus makes it easier to be removed. The methodology is expected to be applied to other metal oxides for oxygen-related point defects control., Comment: 14 pages, 4 figures

The p-n junctions based on typical semiconductors are the elementary units for the modern electronic devices and chip industry. While the rectification property of those p-n junction is usually fixed once the unit is fabricated. Here, we proposed an adjustable n-WO3/p-GaN heterojunction with controllable electronic properties. For the prepared n-WO3/p-GaN heterojunction, it is almost transparent and shows typical p-n junction rectification. While if gradually doping some hydrogen atoms into WO3 layer by a facile electron-proton synergistic route, the heterojunction can be turned dynamically from the typical p-n junction (n-WO3/p-GaN) to standard Schottky contact (HxWO3/p-GaN) step by step. More importantly, this evolution can be directly visualized by eyesight due to the pronounced electrochromic characteristic of WO3 layer. By connecting two HxWO3/p-GaN heterojunctions, the controllable bi-functional rectification can be achieved. In addition, the HxWO3/p-GaN heterojunction can recovered to the original p-n jucntion just by annealing at ambient, demonstrating the heterojunction is controllable and reusable. The current study will open up tremendous opportunities for dynamic electronic devices in the future., Comment: 8 pages, 2 figures

The Metal-Insulator transition (MIT) in VO2 is characterized by the complex interplay among lattice, electronic and orbital degrees of freedom. In this contribution we investigated the strain-modulation of the orbital hierarchy and the influence over macroscopic properties of the metallic phase of VO2 such as Fermi Level (FL) population and metallicity, i.e., the material ability to screen an electric field, by means of temperature-dependent X-ray Absorption Near Edge Structure (XANES) and Resonant Photoemission spectroscopy (ResPES). We demonstrate that the MIT in strained VO2 is of the Filling Control type, hence it is generated by electron correlation effects. In addition, we show that the MIT in Nanostructured (NS) disordered VO2, where the structural phase transition is quenched, is driven by electron correlation. Therefore a fine tuning of the correlation could lead to a precise control and tuning of the transition features.

Doping is an effective way to tune the property of metal oxides1-5, for achieving functional oxide electronics6-8. Previously we developed a controllable hydrogen doping technology at ambient conditions by use of electron-proton synergistic doping strategy, which enables one to get rid of high-temperature/pressure treatments required by traditional technologies9. Here, based on this facile doping route, we achieve a visual and reversible insulator-metal transition (MIT) for tungsten trioxide (WO3) film. Its outstanding spatial selection is comparable to standard UV lithography, which shows the potential of becoming a viable way for rewritable WO3 grating device fabrication. Furthermore, the period of the obtained WO3 structural grating can also be easily changed for requirement by doping area selection. This advanced doping technology opens up alternative approaches for developing not only optical devices, but also rewritable ions devices and integrated circuits for various oxide electronics., Comment: 16 pages, 4 figures

The sun (~6000 K) and outer space (~3 K) are the original heat source and sink for human beings on Earth. The energy applications of absorbing solar irradiation and harvesting the coldness of outer space for energy utilization have attracted considerable interest from researchers. However, combining these two functions in a static device for continuous energy harvesting is unachievable due to the intrinsic infrared spectral conflict. In this study, we developed spectral self-adaptive absorber/emitter (SSA/E) for daytime photothermal and nighttime radiative sky cooling modes depending on the phase transition of the vanadium dioxide coated layer. A 24-hour day-night test showed that the fabricated SSA/E has continuous energy harvesting ability and improved overall energy utilization performance, thus showing remarkable potential in future energy applications., Comment: 15 pages, 4 figures

Charge doping is an effective way to induce metal-insulate transition (MIT) in correlated materials for many important utilizations, which is however practically limited by problem of low stability. In this study, we have achieved pronounced phase modulation and stabilized the metallic state of monoclinic vanadium dioxide (VO2) at room temperature, via a novel electron-proton co-doping mechanism driven by surface absorption of self-assembled L-ascorbic acid (AA) molecules. The ionized AA- species in solution donate effective electrons to the adsorbed VO2 surface, which then electrostatically attract surrounding protons to penetrate, and eventually results in stable hydrogen-doped metallic VO2. The variations of phase and electronic structures as well as the electron occupancy of V-3d/O-2p hybrid orbitals were examined by synchrotron characterizations and first-principle theoretical simulations, which explain the formation of stable metallic state. Importantly, the adsorbed molecules protect hydrogen dopants from escaping out of lattice and thereby stabilize the metallic phase for VO2. Such an electron-proton co-doping mechanism driven by suitable molecules absorption would open a new door for engineering properties of correlated oxide materials., Comment: 25 pages, 5 figures

VO2 material is promising for developing energy-saving "smart window", owing to its thermochromic property induced by metal-insulator transition (MIT). However, its practical application is greatly limited by the relatively high critical transition temperature (~68oC), low luminous transmittance (<60%) and poor solar energy regulation ability (<15%). Here we developed a reversible and non-volatile electric-field control on the MIT of monoclinic VO2 film. With a solid electrolyte layer assisted gating treatment, we modulated the insertion/extraction of hydrogens into/from VO2 lattice at room temperature, causing tri-state phase transitions accompanied with controllable transmission adjustment. The dramatic increase of visible/infrared transmittance during the phase transition from the metallic (lightly H-doping) to insulating (heavily H-doping) phase leads to an increased solar energy regulation ability up to 26.5%, while keep 70.8% visible-luminous transmittance. These results beat all previous records and even exceeded the theoretical limit for traditional VO2 smart window, removing intrinsic disadvantages of VO2 for energy-saving utilizations. Our findings not only demonstrated an electric-field controlled phase modulation strategy, but also open the door for high-performance VO2-based smart window applications., Comment: 19 pages, 5 figures

Searching for new particles beyond the standard model is crucial for understanding several fundamental conundrums in physics and astrophysics. Amongst them, axions or similar hypothetical pseudoscalar bosons would mediate electron-nucleon interactions. While previous experiments set stringent upper bounds of this interaction strength with force range over $20 ~\mu$m, experimental searching at shorter force range remains elusive. We develop a method that utilizes a near-surface Nitrogen-vacancy center as a quantum sensor to explore such interaction. New constraints for axion-mediated electron-nucleon coupling, $g_s^Ng_p^e$, have been set for the force range $0.1 $--$23~\mu$m. The obtained upper bound of the interaction at $20~\mu$m, $g_s^Ng_p^e < 6.24\times10^{-15}$, is two orders of magnitude more stringent than that set by earlier experiments. Our method can be further extended to investigate other spin-dependent interactions and opens the door for the single-spin quantum sensor to explore new physics beyond the standard model.

Hydrogenation is an effective way to tune material property1-5. Traditional techniques for doping hydrogen atoms into solid materials are very costly due to the need for noble metal catalysis and high-temperature/pressure annealing treatment or even high energy proton implantation in vacuum condition5-8. Acid solution contains plenty of freely-wandering protons, but it is difficult to act as a proton source for doping, since the protons always cause corrosions by destroying solid lattices before residing into them. Here we achieve a facile way to hydrogenate monoclinic vanadium dioxide (VO2) with protons in acid solution by attaching suitable metal to it. Considering the Schottky contact at the metal/VO2 interface, electrons flow from metal to VO2 due to workfunction difference and simultaneously attract free protons in acid solution to penetrate, forming the hydrogens dopants inside VO2 lattice. This metal-acid treatment constitutes an electron-proton co-doping strategy, which not only protects the VO2 lattice from corrosion, but also causes pronounced insulator-to-metal transitions. In addition, the metal-acid induced hydrogen doping behavior shows a ripple effect, and it can spread contagiously up to wafer-size area (>2 inch) even triggered by a tiny metal particle attachment (~1.0mm). This will stimulate a new way of simple and cost-effective atomic doping technique for some other oxide materials., Comment: 15 pages, 4 figures

We report modulation of a reversible phase transition in VO2 films by hydrogen doping. A metallic phase and a new insulating phase are successively observed at room temperature as the doping concentration increases. It is suggested that the polarized charges from doped hydrogens play an important role. These charges gradually occupy V3d-O2p hybridized orbitals and consequently modulate the filling of the VO2 crystal conduction band-edge states, which eventually evolve into new valence band-edge states. This demonstrates the exceptional sensitivity of VO2 electronic properties to electron concentration and orbital occupancy, providing key information for the phase transition mechanism., Comment: 16 pages, 4 figures

We presented a high-sensitivity temperature detection using an implanted single Nitrogen-Vacancy center array in diamond. The high-order Thermal Carr-Purcell-Meiboom-Gill (TCPMG) method was performed on the implanted single nitrogen vacancy (NV) center in diamond in a static magnetic field. We demonstrated that under small detunings for the two driving microwave frequencies, the oscillation frequency of the induced fluorescence of the NV center equals approximately to the average of the detunings of the two driving fields. On basis of the conclusion, the zero-field splitting D for the NV center and the corresponding temperature could be determined. The experiment showed that the coherence time for the high-order TCPMG was effectively extended, particularly up to 108 {\mu}s for TCPMG-8, about 14 times of the value 7.7 {\mu}s for thermal Ramsey method. This coherence time corresponded to a thermal sensitivity of 10.1 mK/Hz1/2. We also detected the temperature distribution on the surface of a diamond chip in three different circumstances by using the implanted NV center array with the TCPMG-3 method. The experiment implies the feasibility for using implanted NV centers in high-quality diamonds to detect temperatures in biology, chemistry, material science and microelectronic system with high-sensitivity and nanoscale resolution., Comment: 9 pages, 5 figures