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We study the optical properties of spacetime around a novel regular black hole (BH) in general relativity (GR) coupled to nonlinear electrodynamics (NED), which is asymptotically flat. First, we study the angular velocity and Lyapunov exponent in unstable photon circular orbits in the novel spherically symmetric BH spacetime. Later, the rotating regular BH solution is obtained using the Newmann-Janis algorithm, and the event horizon properties of the BH are determined. We analyze the effective potential for the circular motion of photons in the spacetime of the novel rotating BH. Also, we analyze the photon sphere around the novel BH and its shadow using celestial coordinates. We obtain that an increase of the BH spin and charge as well as NED field nonlinearity parameters causes an increase in the distortion parameter of the BH shadow, while, the area of the shadow and its oblateness decrease. Moreover, we also obtain the constraint values for the BH charge and the nonlinearity parameters using Event Horizon Telescope data from shadow sizes of supermassive BHs Sgr A* and M87*. Finally, the emission rate of BH evaporation through Hawking radiation is also studied.

Two-dimensional materials with Rashba split bands near the Fermi level are key to developing upcoming next-generation spintronics. They enable generating, detecting, and manipulating spin currents without an external magnetic field. Here, we propose BiAs as a novel layered semiconductor with large Rashba splitting in bulk and monolayer forms. Using first-principles calculations, we determined the lowest energy structure of BiAs and its basic electronic properties. Bulk BiAs has a layered crystal structure with two atoms in a rhombohedral primitive cell, similar to the parent Bi and As elemental phases. It is a semiconductor with a narrow and indirect band gap. The spin-orbit coupling leads to Rashba-Dresselhaus spin splitting and characteristic spin texture around the L-point in the Brillouin zone of the hexagonal conventional unit cell, with Rashba energy and Rashba coupling constant for valence (conduction) band of $E_R$= 137 meV (93 meV) and $\alpha_R$= 6.05 eV\AA~(4.6 eV{\AA}). In monolayer form (i.e., composed of a BiAs bilayer), BiAs has a much larger and direct band gap at $\Gamma$, with a circular spin texture characteristic of a pure Rashba effect. The Rashba energy $E_R$= 18 meV and Rashba coupling constant $\alpha_R$= 1.67 eV{\AA} of monolayer BiAs are quite large compared to other known 2D materials, and these values are shown to increase under tensile biaxial strain., Comment: 15pages,9figures

The ability of reconfigurable intelligent surfaces (RIS) to produce complex radiation patterns in the far-field is determined by various factors, such as the unit-cell's size, shape, spatial arrangement, tuning mechanism, the communication and control circuitry's complexity, and the illuminating source's type (point/planewave). Research on RIS has been mainly focused on two areas: first, the optimization and design of unit-cells to achieve desired electromagnetic responses within a specific frequency band; and second, exploring the applications of RIS in various settings, including system-level performance analysis. The former does not assume any specific radiation pattern on the surface level, while the latter does not consider any particular unit-cell design. Both approaches largely ignore the complexity and power requirements of the RIS control circuitry. As we progress towards the fabrication and use of RIS in real-world settings, it is becoming increasingly necessary to consider the interplay between the unit-cell design, the required surface-level radiation patterns, the control circuit's complexity, and the power requirements concurrently. In this paper, a benchmarking framework for RIS is employed to compare performance and analyze tradeoffs between the unit-cell's specified radiation patterns and the control circuit's complexity for far-field beamforming, considering different diode-based unit-cell designs for a given surface size. This work lays the foundation for optimizing the design of the unit-cells and surface-level radiation patterns, facilitating the optimization of RIS-assisted wireless communication systems.

We study a cast Mg-4.65Al-2.82Ca alloy with a microstructure containing $\alpha$-Mg matrix reinforced with a C36 Laves phase skeleton. Such ternary alloys are targeted for elevated temperature applications in automotive engines since they possess excellent creep properties. However, in application, the alloy may be subjected to a wide range of strain rates and in material development, accelerated testing is often of essence. It is therefore crucial to understand the effect of such rate variations. Here, we focus on their impact on damage formation. Due to the locally highly variable skeleton forming the reinforcement in this alloy, we employ an analysis based on high resolution panoramic imaging by scanning electron microscopy coupled with automated damage analysis by deep learning-based object detection and classification convolutional neural network algorithm (YOLOV5). We find that with decreasing strain rate the dominant damage mechanism for a given strain level changes: at a strain rate of $5\cdot10^{-4}/s$ the evolution of microcracks in the C36 Laves phase governs damage formation. However , when the strain rate is decreased to $5\cdot10^{-6}/s$, interface decohesion at the $\alpha$-Mg/Laves phase interfaces becomes equally important. We also observe a change in crack orientation indicating an increasing influence of plastic co-deformation of the {\alpha}-Mg matrix and Laves phase. We attribute this transition in leading damage mechanism to thermally activated processes at the interface.

Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials.