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A new β‐pyrochlore compound with complex composition of Cs(V3+0.0625V5+0.5625Te4+0.34375Te6+1.03125)O6 has been synthesized by a solid‐state reaction and characterized by single‐crystal X‐ray diffraction and thermal analysis. The compound possesses the typical cubic symmetry with space group Fd3‾m ${Fd\overline{3}m}$ , however some of the oxygen atoms shift from the special position 48 f to the general crystallographic positions 32e, 96 g and 96 h. This shift is caused by complex B‐site composition with mixed‐valence vanadium and tellurium atoms, especially the presence of the large Te4+ ion. The locations of the valence band and conduction band edges were determined experimentally under vacuum conditions by X‐ray photoelectron spectroscopy, UV‐visible and impedance spectroscopy and evaluated theoretically for water solutions. The photocatalytic ability of the compound under visible light irradiation was determined using the methylene blue decomposition process as an example. The nature of the active radical species and possible dye degradation pathway were suggested according to experimental data. [ABSTRACT FROM AUTHOR]

The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and electrode materials of these devices (silicon oxide and titanium nitride, respectively) are fully compatible with conventional complementary metal-oxide-semiconductor (CMOS) fabrication processes. Silicon oxide is also obtained through the low-temperature chemical vapor deposition method. It is revealed that the as-fabricated devices do not require electroforming but their resistance state cannot be stored before thermal treatment. After the thermal treatment, the devices exhibit bipolar-type resistive switching with synaptic behavior. The conduction mechanisms in the device stack are associated with the effect of traps in the insulator, which form filaments in the places where the electric field is concentrated. The filaments shortcut the capacitance of the stack to different degrees in the high-resistance state (HRS) and in the low-resistance state (LRS). As a result, the electron transport possesses an activation nature with relatively low values of activation energy in an HRS. On the contrary, Ohm's law and tunneling are observed in an LRS. CMOS-compatible materials and low-temperature fabrication techniques enable the easy integration of the studied resistive-switching devices with traditional analog–digital circuits to implement new-generation hardware neuromorphic systems. [ABSTRACT FROM AUTHOR]