22 results on '"Zuyin Han"'
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2. Dynamic Analysis of the Negative OFF-State Current in Thin-film Transistors
3. Flexible Transparent InGaZnO Thin-Film Transistors on Muscovite Mica
4. High-performance IGZO/Ga2O3 dual-active-layer thin film transistor for deep UV detection
5. Retraction Note: Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities
6. Dual-active-layer InGaZnO high-voltage thin-film transistors
7. Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO2 thin film
8. Integrated Flexible Ga 2 O 3 Deep UV Photodetectors Powered by Environmental Electromagnetic Radiation Energy
9. Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films
10. Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga 2 O 3 Thin‐Film Transistors
11. Impact of DSOI back-gate biasing on circuit conducted emission
12. Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
13. Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions
14. Total dose effect of Al2O3-based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation
15. RETRACTED ARTICLE: Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities
16. Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells
17. Strong photoluminescence of the porous silicon with HfO2-filled microcavities
18. Investigation of chemical distribution in the oxide bulk layer in Ti/HfO2/Pt memory devices using x-ray photoelectron spectroscopy
19. Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures.
20. Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells.
21. Strong photoluminescence of the porous silicon with HfO2-filled microcavities.
22. Investigation of chemical distribution in the oxide bulk layer in Ti/HfO2/Pt memory devices using x-ray photoelectron spectroscopy.
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