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Your search keyword '"Zverev, Ilia"' showing total 11 results
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11 results on '"Zverev, Ilia"'

1. Research by Hydrophysics Laboratory of NWPI KarRC RAS in 1991–2022

Author

Тержевик, Аркадий Юрьевич, primary, Пальшин, Николай Иннокентьевич, additional, Ефремова, Татьяна Владимировна, additional, Богданов, Cергей Рэмович, additional, Голосов, Сергей Дмитриевич, additional, Зверев, Илья Сергеевич, additional, Волков, Сергей Юрьевич, additional, Митрохов, Андрей Васильевич, additional, Смирнов, Сергей Игоревич, additional, Здоровеннов, Роман Эдуардович, additional, Здоровеннова, Галина Эдуардовна, additional, Terzhevik, Arkady, additional, Palshin, Nikolai, additional, Efremova, Tatyana, additional, Bogdanov, Sergey, additional, Golosov, Sergey, additional, Zverev, Ilia, additional, Volkov, Sergey, additional, Mitrokhov, Andrey, additional, Smirnov, Sergey, additional, Zdorovennov, Roman, additional, and Zdorovennova, Galina, additional

Published
2023
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2. RAT-RUS: Russian Language Remote Associate Problems set

Author

Ammalainen, Artur, Moroshkina, Nadezhda, Gershkovich, Valeria, Zverev, Ilia, Savina, Alina, and Lvova, Olga

Subjects
Aha experience, problem solving, insight, Remote Associates Test
Abstract

The dataset accompanies our research on correlation between Aha! experience and subjective difficulty judgements. It contains 100 Russian Language RAT problems and their average behavioural and phenomenological measures

Published
2022
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6. Matched pair of CoolMOS transistor with SiC-Schottky diode--advantages in application

Author

Lorenz, Leo, Deboy, Gerald, and Zverev, Ilia

Subjects
Circuit components -- Research, Semiconductor device, Business, Computers, Electronics, Electronics and electrical industries
Abstract

The new CoolMOs C3 generation combines extremely high on-state conductivity with ultrafast switching speed at full pulse current capability. In the first generation of CoolMOS the saturation current was intentionally reduced at the cell level for the benefit of short-circuit ruggedness. This technique results in a reduced current capability of the device at low gate voltages, which has been overcome today by the C3 family. In some applications the outstanding switching performance of the CoolMOs cannot be utilized due to the dynamic behavior of the diode. For this reason a whole family of SiC diodes has been developed to attain the ideal matched pair of switch and ultrafast diodes. The goal of ultralow-loss applications in switch-mode power supplies, power-factor-correction circuits, and motor control units will be achieved perfectly. Index Terms--CoolMOS, electrical characteristics, power-factor-correction (PFC) boost converter, power loss measurement, power MOSFET, SiC, switching behavior.

Published
2004

10. SiC Schottky Diodes Improve Boost Converter Performance.

Author

Zverev, Ilia

Subjects
DIODES, CASCADE converters
Abstract

Discusses the use of SiC Schottky diodes for the improvement of switching frequency of boost converters. Impact of switching power supplies on power loss and frequency; Components of a boost converter; Performance evaluations on the degree of converter optimization freedom.

Published
2003

11. SIC SCHOTTKY DIODES: READY FOR BLAST OFF.

Author

Kapels, Holger, Krach, Michael, Miesner, Christian, Rupp, Roland, and Zverev, Ilia

Subjects
SCHOTTKY barrier diodes, SILICON carbide, SEMICONDUCTOR rectifiers
Abstract

Reports that SiC Schottky diodes outperform their silicon and gallium arsenide counterparts. Ability to exhibit up to 600V blocking voltage with the absence of reverse recovery charge and current; Elimination of the need to remove excess carriers from the n-region; Applications in boost converters and secondary side rectification.

Published
2002

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