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We study the effect of strain on the magnetic properties and magnetization configurations in nanogranular FexGe1-xfilms (x=0.53±0.05) with and without B20 FeGe nanocrystals surrounded by an amorphous structure. Relaxed films on amorphous silicon nitride membranes reveal a disordered skyrmion phase while films near and on top of a rigid substrate favor ferromagnetism and an anisotropic hybridization of Fedlevels and spin-polarized Gespband states. The weakly coupled topological states emerge at room temperature and become more abundant at cryogenic temperatures without showing indications of pinning at defects or confinement to individual grains. These results demonstrate the possibility to control magnetic exchange and topological magnetism by strain and inform magnetoelasticity-mediated voltage control of topological phases in amorphous quantum materials.

Organic emitters that exhibit room‐temperature phosphorescence (RTP) in neat films have application potential for optoelectronic devices, bio‐imaging, and sensing. Due to molecular vibrations or rotations, the majority of triplet excitons recombine rapidly via non‐radiative processes in purely organic emitters, making it challenging to observe RTP in amorphous films. Here, a chemical strategy to enhance RTP in amorphous neat films is reported, by utilizing through‐space charge‐transfer (TSCT) effect induced by intramolecular steric hindrance. The donor and acceptor groups interact via spatial orbital overlaps, while molecular motions are suppressed simultaneously. As a result, triplets generated under photo‐excitation are stabilized in amorphous films, contributing to phosphorescence even at room temperature. The solvatochromic effect on the steady‐state and transient photoluminescence reveals the charge‐transfer feature of involved excited states, while the TSCT effect is further experimentally resolved by femtosecond transient absorption spectroscopy. The designed luminescent materials with pronounced TSCT effect show RTP in amorphous films, with lifetimes up to ≈40 ms, comparable to that in a rigid polymer host. Photoluminescence afterglow longer than 3 s is observed in neat films at room temperature. Therefore, it is demonstrated that utilizing intramolecular steric hindrance to stabilize long‐lived triplets leads to phosphorescence in amorphous films at room temperature. [ABSTRACT FROM AUTHOR]

Amorphous thin films can be applied to increase the anti-corrosion ability of critical components. Atomized FeCrNiMoCSiB powders were hot-pressed into a disc target for R. F. magnetron sputtering on a 316L substrate to upgrade its corrosion resistance. The XRD spectrum confirmed that the film deposited by R. F. magnetron sputtering was amorphous. The corrosion resistance of the amorphous film was evaluated in a 1 M HCl solution with potentiodynamic polarization tests, and the results were contrasted with those of a high-velocity oxy-fuel (HVOF) coating and 316L, IN 600, and C 276 alloys. The results indicated that the film hardness and elastic modulus, as measured using a nanoindenter, were 11.1 and 182 GPa, respectively. The principal stresses in two normal directions of the amorphous film were about 60 MPa and in tension. The corrosion resistance of the amorphous film was much greater than that of the other samples, which showed a broad passivation region, even in a 1 M HCl solution. Although the amorphous film showed high corrosion resistance, the original pinholes in the film were weak sites to initiate corrosion pits. After polarization tests, large, deep trenches were seen in the corroded 316L substrate; numerous fine patches in the IN 600 alloy and grain boundary corrosion in the C276 alloy were observed. [ABSTRACT FROM AUTHOR]

Amorphous silicon carbide (a-SiC) films hold promise for microelectronic and MEMS devices. Prior to their use in microfabricated devices, these films undergo plasma etching. This study investigates reactive ion etching (RIE) of sputtered a-SiC films on Si (100) substrates using sulfur hexafluoride (SF6) gas. The focus is on the impact of RF power on the thickness, structure, chemistry, and morphology of the SiC film. Grazing Incidence X-ray Diffraction (GIXRD) analysis of the etched samples indicates crystalline SiC formation at low temperatures. Surface morphology analysis using Field Emission Scanning Electron Microscopy (FESEM) confirms the GIXRD results. The RIE process unintentionally induces crystallization of a-SiC films, but adjusting etching process parameters allows control over film crystallinity. [ABSTRACT FROM AUTHOR]

The influence of pulsed laser treatment mode parameters on ablation and modification processes of Si3N4–TiC ceramics is determined. A mode of pulsed laser processing using the revealed interrelations after diamond grinding of Si3N4–TiC ceramic parts is established and recommended for practical use to ensure defective-layer removal and defect-free structure formation in the surface layer. [ABSTRACT FROM AUTHOR]

In order to research the effect of applied magnetic field direction on magnetic properties during oblique sputtering, in this paper, a magnetic field is applied along (or perpendicular to) in-plane projection of the incident direction of the sputtering atomic beam. VSM and magnetic spectrum results show that the applied magnetic field direction greatly affects the uniaxial anisotropy, thereby affecting the ferromagnetic resonance frequency. It was found by AFM and cross-sectional SEM that the morphology of the film and the angle of the inclined columnar crystal were completely different when the magnetic field was applied in different directions. When a magnetic field is applied along the in-plane projection of the incident direction of the sputtering atomic beam, the angle between the columnar crystal and the normal direction of the substrate is about 30°. When the magnetic field is applied to the in-plane projection perpendicular to the incident direction of the sputtering atomic beam, the columnar crystal can be seen vaguely, and there is basically no inclination angle. In addition, when the tilt angle is constant, the uniaxial anisotropy increases with the increase of target-substrate distance, which is caused by the increase of the electron beam inflow angle. [ABSTRACT FROM AUTHOR]

TiOx films were prepared by gas impulse magnetron sputtering under oxygen-deficient (ODC) and oxygen-rich conditions (ORC) and annealing at 100–800 °C was used. The O2 content had an effect on their transparency level (Tλ). The films from the ORC mode had ca. Tλ = 60%, which decreased slightly in the VIS range after annealing. The film from the ODC mode had lower transmission (ca. <10%), which increased in the NIR range after annealing by up to ca. 60%. Differences in optical band gap (Egopt) and Urbach energy (Eu) were also observed. The deposition parameters had an influence on the microstructure of TiOx coatings. The ORC and ODC modes resulted in columnar and grainy structures, respectively. Directly after deposition, both coatings were amorphous according to the GIXRD results. In the case of TiOxORC films, this state was retained even after annealing, while for TiOxODC, the crystalline forms of Ti and TiO2-anatase were revealed with increasing temperature. Sensor studies have shown that the response to H2 in the coating deposited under oxygen-rich conditions was characteristic of n-type conductivity, while oxygen-deficient conditions led to a p-type response. The highest sensor responses were achieved for TiOxODC annealed at 300 °C and 400 °C. [ABSTRACT FROM AUTHOR]

Crystallization kinetics of 30-nm-thick amorphous TlIn1 – xSnxSe2 films produced by thermal evaporation under high vacuum in a dc electric field E = 3000 V/cm have been studied by kinematic electron diffraction. The results demonstrate that the formation of the crystal structure of the amorphous films during heat treatment follows Avrami–Kolmogorov relations. Kinetic curves of the phase transformation demonstrate the effect of an electric field on the temperature range of film crystallization and on the activation energies for nucleation and subsequent nucleus growth. The total activation energy for the crystallization process has been determined to be Etotal = 44.92 kcal/mol. The observed diffraction lines of the polycrystalline TlIn0.93Sn0.07Sе2 films in their kinematic electron diffraction patterns can be indexed in tetragonal symmetry (sp. gr. = I4/mcm [12]) with unit-cell parameters a = b = 0.8358 nm and c = 0.7086 nm. After storage of the films in vacuum at room temperature for more than two months, no changes were detected in their quality or diffraction pattern. [ABSTRACT FROM AUTHOR]

Super 13Cr martensitic stainless steel (UNS S41426, S13Cr MSS in the case) developed for gas fields is being applied more broadly. However, the stress corrosion cracking induced by pitting limits its application range. To enhance the corrosion resistance, a new amorphous film was pre-formed on its surface by a modified alkaline solution. The nanoscale amorphous film contained FeO, Fe 2 O 3 , Cr 2 O 3 and Cr(OH) 3 , growing logarithmically after a short dissolution duration. The general corrosion resistance of S13Cr MSS improved significantly, as evidenced by a decrease in corrosion current density by an order of magnitude. Additionally, the pitting potential of S13Cr MSS increased by nearly 100 %. This work provides a strategy for addressing surface defects in S13Cr MSS. • The surface-homogenization idea is developed to improve 13Cr's corrosion resistance. • A nanoscale amorphous film is preformed on surface of 13Cr by a modified solution. • The amorphous film grows logarithmically with production duration. [ABSTRACT FROM AUTHOR]

We study the effect of strain on the magnetic properties and magnetization configurations in nanogranular Fe x Ge1-xfilms (x=0.53±0.05) with and without B20 FeGe nanocrystals surrounded by an amorphous structure. Relaxed films on amorphous silicon nitride membranes reveal a disordered skyrmion phase while films near and on top of a rigid substrate favor ferromagnetism and an anisotropic hybridization of Fe d levels and spin-polarized Ge sp band states. The weakly coupled topological states emerge at room temperature and become more abundant at cryogenic temperatures without showing indications of pinning at defects or confinement to individual grains. These results demonstrate the possibility to control magnetic exchange and topological magnetism by strain and inform magnetoelasticity-mediated voltage control of topological phases in amorphous quantum materials., (Creative Commons Attribution license.)

Solid-state electrolytes have emerged as a key area of development in the field of Li-ion batteries owing to safety concerns surrounding liquid electrolytes. Among solid-state electrolytes, Li 1.5 Al 0.5 Ti 1.5 (PO 4) 3 (LATP), a NASICON-type material, is a leading candidate owing to its promising ionic conductivity, chemical and environmental stability, and cost-effectiveness. However, its ionic conductivity is limited by grain-boundary scattering, which hinders its broader adoption. Herein, we introduce a novel grain-boundary engineering strategy for the LATP electrolyte system using typical solid-state method, wherein a Ge-rich liquid phase spontaneously forms at the grain boundaries of GeO 2 -enriched LATP during synthesis, producing an intergranular amorphous film in the final material that significantly enhances Li-ion transport at the grain boundaries. With an optimal content of 4 wt% GeO 2 , the ionic conductivity reaches 8.92 × 10−4 S cm−1—an eightfold increase compared to that of pristine LATP. This high ionic conductivity also bestows 4 wt% GeO 2 -LATP with excellent cell performance, with a symmetric Li/4 wt% GeO 2 -LATP/Li cell exhibiting stable operation for over 500 h with low overpotentials. Our findings underscore the importance of grain-boundary engineering in advancing solid-state electrolytes and pave the way for the commercialization of next-generation all-solid-state Li-ion batteries. [ABSTRACT FROM AUTHOR]

In this work, the phase transition of a highly disordered amorphous VO2 film is studied. It is found that the electronic transport behavior follows the Arrhenius or Vogelâ€"Tammannâ€"Fulcher model, showing different thermal sensitivity under different thicknesses. Based on it, the concept of a prototype device with overheating protection capability is demonstrated. The results, reflecting the relationship between phase transition and structural disorder, open up a unique pathway to understand the metal insulator transition in strongly correlated electronic systems and to its functionality in electronic devices. [ABSTRACT FROM AUTHOR]

Multi-layer weld metal of NiCrMoV steels used in nuclear rotor was adopted to perform stress corrosion cracking (SCC) test at 180 ℃, which indicated the crack growth rate in 3.5% NaCl solution was lower than that in pure water. The results obtained from high resolution transmission electron microscopy (HRTEM) analysis revealed that the combined effect of crack branching behavior and amorphous film made contributions to the slower crack growth rate. The aggressive Cl− ions invaded grain in multi-directions that was promoted by dislocation motion, facilitating the main crack to bifurcate. Besides, nanocrystals also enhanced branching behavior by deflecting the crack growth path. An amorphous film forming in crack evolved from the disorder of atom arrangement produced by dislocation accumulation and grew stably with the supplement of carbon atom generated in selective corrosion. The complete amorphous film was absent connected path for migration of aggressive anions, thus weakened the driving force for crack propagation and improved resistance to localized corrosion attack.

Amorphous AlBN dielectric films were deposited on GaN (002) by pulsed laser deposition (PLD). The crystal structure and composition of the grown films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Conductive atomic force microscope (CAFM) and I-V methods were also used to test the electrical properties of films with different thickness. The results show that the AlBN dielectric films with different thickness is amorphous, and the content of boron in all the films is about 6.7%(atom fraction). The root-mean-aquare (RMS) surface roughness Rq of the films with thickness of 3 nm and 18 nm are only 0.209 nm and 0.116 nm, respectively, indicating smooth surface of these AlBN film. When the voltage of ±10 V is applied, there is no obvious leakage current in the film with a thicknes of 18 nm. However, in the metal-insulator-metal (MIM) structure, a large leakage current appears in the 18 nm thin film structure, and the leakage current density is about -2×10-4 A/cm2 at -2 V.

TiOx films were prepared by gas impulse magnetron sputtering under oxygen-deficient (ODC) and oxygen-rich conditions (ORC) and annealing at 100–800 °C was used. The O2 content had an effect on their transparency level (Tλ). The films from the ORC mode had ca. Tλ = 60%, which decreased slightly in the VIS range after annealing. The film from the ODC mode had lower transmission (ca. gopt) and Urbach energy (Eu) were also observed. The deposition parameters had an influence on the microstructure of TiOx coatings. The ORC and ODC modes resulted in columnar and grainy structures, respectively. Directly after deposition, both coatings were amorphous according to the GIXRD results. In the case of TiOxORC films, this state was retained even after annealing, while for TiOxODC, the crystalline forms of Ti and TiO2-anatase were revealed with increasing temperature. Sensor studies have shown that the response to H2 in the coating deposited under oxygen-rich conditions was characteristic of n-type conductivity, while oxygen-deficient conditions led to a p-type response. The highest sensor responses were achieved for TiOxODC annealed at 300 °C and 400 °C.

The 329-type bismuth (Bi)-based metal halide (MH) polycrystalline films have potential to be applied in the new generation of X-ray imaging technology owing to high X-ray absorption coefficients and excellent detection properties. However, the mutually independent [Bi 2 X 9 ] 3- units and numerous grain boundaries in the material lead to low carrier transport and collection capabilities, severe ion migration, large dark currents, and poor response uniformity. Here, a new multi-phenyl ring methyltriphenylphosphonium (MTP) is designed to optimize the energy band structure. For the first time, the coupling between the A-site cation and [Bi 2 X 9 ] 3- is realized, making it the main contributor to the conduction band minimum (CBM), getting rid of dilemma that carrier transport is confined to [Bi 2 X 9 ] 3- . Further, the preparation of MTP 3 Bi 2 I 9 amorphous large-area wafer is achieved by melt-quenching; the steric hindrance effect improves stability, increases ion migration energy, and promotes response uniformity (14%). Moreover, the amorphous structure takes advantage of A-site cation participation in the conductivity, achieving a record sensitivity (7601 µC Gy -1 cm -2 ) and low dark current (≈0.11 nA) in the field of amorphous X-ray detection, and features low-temperature large-area preparation. Ultimately, designing amorphous array imaging devices that exhibit excellent response uniformity and potential imaging capabilities is succeeded here., (© 2024 Wiley‐VCH GmbH.)

• The a-C/(Ti:C)/Ti film with 300 nm thickness prepared by multi-arc ion plating. • Improved 316L stainless steel corrosion resistance in simulated cathode solution. • Current density reaches 0.076 μA·cm−2 after 4 h test at 0.6 V (vs. Ag/AgCl). • Low interfacial contact resistance and hydrophobicity for a-C/(Ti:C)/Ti film. To enhance corrosion resistance and electrical conductivity of metallic bipolar plates for proton exchange membrane fuel cells (PEMFCs), the film containing amorphous carbon (a-C) outer layer, titanium carbon compound (Ti:C) transition layer and titanium (Ti) seed layer has been deposited on the surface of 316L stainless steel (316L SS) by multi-arc ion plating method. Dense and uniform a-C/(Ti:C)/Ti nano-thin film is relatively hydrophobic and approximately 300 nm thick, presenting a clear multilayer structure. The interfacial contact resistance of 316L SS is effectively reduced from 124.97 mΩ·cm2 to 3.97 mΩ·cm2 at 1.4 MPa after modification. Electrochemical corrosion tests are investigated in the simulated cathodic PEMFCs environment (0.5 M H 2 SO 4 and 2 ppm HF at 70 ℃ bubbled with air). Potentiodynamic polarization results reveal that the corrosion potential of a-C/(Ti:C)/Ti film modified sample is 0.23 V (vs. Ag/AgCl) and the corrosion current density is only 0.14 μA·cm−2. The durability of the a-C/(Ti:C)/Ti film was assessed by conducting potentiostatic polarization tests at various applied potentials. After 4 h potential of 0.6 V and 0.8 V (vs. Ag/AgCl) holding tests, the current densities of the modified 316L SS have stabilized at 0.076 μA·cm−2 and 0.098 μA·cm−2, respectively. [ABSTRACT FROM AUTHOR]

Abstract We demonstrated that a mass density and size effect are dominant factors to limit the transport properties of very thin amorphous Sn-doped In2O3 (a-ITO) films. a-ITO films with various thicknesses (t) ranging from 5 to 50 nm were deposited on non-alkali glass substrates without intentional heating of the substrates by reactive plasma deposition with direct-current arc discharge. a-ITO films with t of more than 10 nm showed a high Hall mobility (μ H) of more than 50 cm2/V s. For 5-nm-thick a-ITO films, we found that μ H was as high as more than 40 cm2/V s. X-ray reflectivity measurement results revealed that the mass density (d m) determined the carrier transport in a-ITO films. For a-ITO films with t of more than 10 nm, d m had a high value of 7.2 g/cm3, whereas a-ITO films with t of less than 10 nm had low d m ranging from 6.6 to 6.8 g/cm3. Quantitative new insight from a size effect on the carrier transport is given for a-ITO films with t of less than 10 nm. This study shows that the ratio of t to mean free path of carrier electrons governed μ H.

Hydrogen to silicon (Si–H) bond concentration and strength play important roles in high quality hydrogenated amorphous silicon layers prepared by PECVD techniques. In this paper, a number of amorphous and polymorphous Si layers have been deposited at different plasma conditions where a wide range of hydrogen concentration in the films are obtained. Some of the samples were stored in free air and the others in nitrogen for eight days. The layers were analyzed using AFM, FTIR, Raman, UV–Visible, and TEM immediately after deposition and after treatments. The results indicate that in the amorphous films with appreciable amount of embedded silicon nanocrystals, the variation of hydrogen content behaves differently than that of the amorphous films. It has been observed that treatment in the air increases the energy gap of the nanocrystals surrounded by oxide shells, formed around the surface nanocrystals, due to the quantum confinement effects. [ABSTRACT FROM AUTHOR]

Pyridinyl-carbazole fragments containing low molar mass compounds as host derivatives H1 and H2 were synthesized, investigated, and used for the preparation of electro-phosphorescent organic light-emitting devices (PhOLEDs). The materials demonstrated high stability against thermal decomposition with the decomposition temperatures of 361–386 °C and were suitable for the preparation of thin amorphous and homogeneous layers with very high values of glass transition temperatures of 127–139 °C. It was determined that triplet energy values of the derivatives are, correspondingly, 2.82 eV for the derivative H1 and 2.81 eV for the host H2. The new derivatives were tested as hosts of emitting layers in blue, as well as in green phosphorescent OLEDs. The blue device with 15 wt.% of the iridium(III)[bis(4,6-difluorophenyl)-pyridinato-N,C2′]picolinate (FIrpic) emitter doping ratio in host material H2 exhibited the best overall characteristics with a power efficiency of 24.9 lm/W, a current efficiency of 23.9 cd/A, and high value of 10.3% of external quantum efficiency at 100 cd/m2. The most efficient green PhOLED with 10 wt% of Ir(ppy)3 {tris(2-phenylpyridine)iridium(III)} in the H2 host showed a power efficiency of 34.1 lm/W, current efficiency of 33.9 cd/A, and a high value of 9.4% for external quantum efficiency at a high brightness of 1000 cd/m2, which is required for lighting applications. These characteristics were obtained in non-optimized PhOLEDs under an ordinary laboratory atmosphere and could be improved in the optimization process. The results demonstrate that some of the new host materials are very promising components for the development of efficient phosphorescent devices.

In order to explore the application of magnetron co-sputtering in fabricating the amorphous alloy, Zr-contained amorphous films were prepared by this technique and investigated by scanning electron microscope, energy disperse spectroscopy and X-ray diffraction. The results show that the co-sputtered films are in fully amorphous state or with amorphous-nanocrystalline structure. The XRD patterns of the Zr-Cu and Zr-Ni amorphous films exhibit a double-peak phenomenon. There is a shift of diffusive peak with changing the sputtering current which is possibly attributed to the change of Zr-Ni and Zr-Cu intermetallic like short range orders. In addition, Zr-Cu-Ni ternary co-sputtered films have a sharper peak at high angle. The sputtering yield of element during co-sputtering ranks as Cu>Ni>Zr, which can be ascribed to the contribution of melting and boiling temperature, atomic size and electrical conductivity of elements. [ABSTRACT FROM AUTHOR]

Graphical abstract Highlights • In-doped As 2 Se 3 thin films were prepared by thermal evaporation. • X-ray photoelectron spectroscopy shows In content to decrease with the film depth. • Raman spectra show the formation of InAs nanocrystals under intense laser light. Abstract Amorphous In-doped As 2 Se 3 films with nominal indium contents x up to 7 at.% were prepared by thermal evaporation. Atomic force microscopy studies confirm the uniform film structure with a surface roughness near 5 nm, noticeably higher than for similarly prepared undoped As 2 Se 3 film. X-ray photoelectron spectroscopy (XPS) studies enabled the chemical composition of the films to be examined. As follows from the XPS data, the In content in the film strongly decreases with the film depth. For films with x ≥ 2 at.%, Raman features attributed to transverse and longitudinal optical phonons of InAs are revealed in the Raman spectra as an evidence for the formation of InAs nanocrystallites in the As 2 Se 3 :In film under laser illumination. [ABSTRACT FROM AUTHOR]

Digital image correlation (DIC) was applied to the measurement of the coefficient of thermal expansion (CTE) of ceramic enamel films between 100 and 300°C. The CTE of four different enamels were measured by DIC, and the data were correlated with the residual stresses on fired enameled soda‐lime glass substrates. For validation, the CTE of a zinc‐containing alkali borosilicate glass was measured by DIC and push‐rod dilatometry. The results suggested that DIC is an effective technique for measuring the CTE of ceramic enamel films. [ABSTRACT FROM AUTHOR]

[Display omitted] • Introducing bismuth-doped WO 3 film into electrochromism for the first time. • Amorphous Bi-WO 3 film possess fast switching time and excellent stability. • Design and construct a proton-based aqueous electrochromic device. • Bi-WO 3 -based aqueous electrochromic device exhibits fascinating performance. Tungsten trioxide (WO 3) film, recognized as one of the most promising electrochromic materials due to its exceptional electrochemical characteristics, is extensively utilized in fabricating electrochromic devices. The use of bismuth-doped WO 3 (Bi-WO 3) films in photoelectrocatalysis has been extensively studied. However, its potential in electrochromism remains unexplored. Herein, amorphous Bi-WO 3 films with enhanced electrochromic performance are synthesized through a simple sol–gel method. The effects of Bi doping amount and sol concentration on the electrochromic properties of Bi-WO 3 films are investigated. The optimized Bi-WO 3 film displays excellent electrochromic performance, encompassing high optical contrast (ΔT = 81% at 630 nm), fast switching time (2.4/1.2 s for coloring and bleaching), and high coloration efficiency (55.84 cm2C−1). An electrochromic device is assembled utilizing an amorphous Bi-WO 3 film as the electrochromic layer with Cu foil as the counter electrode. The fascinating electrochromic properties of amorphous Bi-WO 3 thin films and the high activity features of proton enable the assembled ECD to have a suitable working voltage range (1.1 V) in aqueous electrolytes. Besides, the electrochromic device demonstrates outstanding properties (ΔT = 70%, t c = 3 s, t b = 0.9 s) and provides a helpful strategy for the facile processing of high-performance electrochromic devices. [ABSTRACT FROM AUTHOR]

• Detailed parameter variation during sputter deposition of MoNbTaWZr films. • Influence of duty cycle, Ar pressure and pulse frequency analyzed and discussed. • Parameters enabling high energetic growth conditions lead to amorphous microstructure. • Films deposited with low energetic growth conditions have a crystalline bcc structure. • Impact of microstructure and morphology on electrical resistivity discussed. Within this study a series of MoNbTaWZr thin films were synthesized using high power impulse magnetron sputtering (HiPIMS) with varying the deposition parameters: duty cycle from 0.5 to 100 % (i.e. DC magnetron sputtering (DCMS)), Ar pressure from 0.5 to 3 Pa and pulse frequency from 25 to 200 Hz. The structure of the deposited films was analyzed by X-ray diffraction and scanning and transmission electron microscopy. In addition, the electrical resistivity and the residual stress of the films was determined. The influence of the deposition parameter variation on structure and properties of the MoNbTaWZr films is discussed on the established framework of film growth conditions achievable with HiPIMS and DCMS and how they can be influenced by adapting the deposition parameters. The performed work is intended to contribute to a comprehensive understanding about synthesis-structure-property relations for refractory high entropy alloy thin films while using MoNbTaWZr films as a model system. [ABSTRACT FROM AUTHOR]

• The substrate temperature (350, 400 and 500°C) induced effect in the electrochromic performance of nebulizer-assisted spray deposited Mn 3 O 4 thin films was studied. • The highest optical transmittance of 81.85% was reached in the visible region of 450°C substrate temperature sample. • The aqueous Na 2 SO 4 electrolyte solution allows a greater working potential range in the electrochromic study. • The optical blue-shift in maximum peak positions of ∆A, ∆T, AME (CE) and TME was noticed. • After the 100th CV cycle, the phase conversation of Mn 3 O 4 (spinel) to Na-birnessite (Na δ MnO 2.nH 2 O) was taken place. • The maximum peak position of AME (CE) value 9.626 cm2C−1 was positioned at 431.61 nm of 350°C substrate temperature sample. In this work, we report the impact of substrate temperature effect on the electrochromic characteristics of trimanganese tetraoxide (Mn 3 O 4) films prepared by nebulizer-assisted simple spray pyrolysis technique. The deposited films are in tetragonal Mn 3 O 4 crystal-phase as realized by XRD study. The A 1g , T 2g and E g Raman active modes of spinel-Mn 3 O 4 phase are observed well in micro-Raman study. The electronic states and surface topology of the deposited Mn 3 O 4 films were examined by XPS and FE-SEM analyses. From the optical study, the blue shift in transmittance edges and the systematic improvement of optical band gap are visualized when increasing the substrate temperature. The electrochromic performance of deposited samples was examined in 0.5 M Na 2 SO 4 neutral aqueous system at room temperature. This neutral electrolyte offers lesser H+ and OH− concentrations and low corrosion effect, which make the window potential range wider. The optical blue-shift was observed in maximum peak positions of electrochromic parameters. The obtained result revealed that the amorphous films have superior electrochromic behavior than the crystalline one. The sample prepared at 350°C substrate temperature reaches a maximum absorbance modulation efficiency (AME m (CE m)) of 9.626 cm2/C (at 431.61 nm), whereas, after the 100th cycle, the AME m value increases from 9.626 to 11.154 cm2/C. [Display omitted] [ABSTRACT FROM AUTHOR]

The paper deals with crystallization kinetics of amorphous AgInS2 film. The dependence between lnln(V0 / (V0 -Vt) and lnt is obtained for 423, 448 and 468 K temperatures, which shows a linear arrangement of points for these temperatures, i.e. 2.80 2.87 and 2.93, respectively. The approximate equality of these values indicates that during AgInS2 film crystallization, a two-dimensional crystal growth occurs and the reaction rate constant equals (1/3π) ηnηc2. [ABSTRACT FROM AUTHOR]

Molecular dynamics modeling is used to investigate the sliding feature of different nano-scale specimens: single-crystal nickel evolving from amorphous pure Ni during shear deformation, Ni-P amorphous layer and nanocrystalline nickel. Special attentions are paid to the value of resistance stresses and plastic deformation mechanisms manifested during sliding simulations. The study is performed for considered systems at a temperature of about 300 K with narrow acceptable range of temperature fluctuation. It was found that Ni-P amorphous structure is characterized by lowest resistance stresses and smooth sliding provided by the bond-switching mechanism between pairs of atoms due to shear loading. Similar low resistance stress was also observed for an amorphous pure Ni layer, but only at an early stage of sliding before crystallization occurred. The highest shear resistance was confirmed for single-crystal nickel caused by classical deformation mechanisms like stacking fault formation and dislocation movement. Sliding simulations of a nanocrystalline specimen show both, crystal defect driven deformation in the bulk and sliding along quasi-amorphous grain boundaries. In that case the resistance force was between amorphous layer sliding and single crystal sliding, but closer to amorphous layer sliding. [ABSTRACT FROM AUTHOR]