1. GaFeO3 ∶Mg 晶体的生长及磁学性能研究.
- Author
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王文凯, 潘秀红, 胡雨青, 刘学超, 陈小红, 陈 锟, 方婧红, 贺 欢, and 倪津崎
- Subjects
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MAGNETIC crystals , *MAGNETIC transitions , *TRANSITION temperature , *SPONTANEOUS magnetization , *MAGNETIC properties - Abstract
Multiferroic materials can realize the mutual coupling between force, electricity, magnetism and other physical fields, and have important application prospects in the field of small size, fast response and low power consumption of magnetoelectric devices. GaFeO3 is a highly promising multiferroic material featuring high spontaneous magnetization and polarization beyond room temperature. In this study, Ferroelectric Mgx Ga1 - x FeO3 (x = 0. 02, 0. 05, 0. 07 and 0. 10) single crystals with a diameter of about 7 mm were grown by light floating zone method. The effect of Mg2 + on the saturation magnetization and magnetic transition temperature of GaFeO3 (GFO) crystals were studied. The structure and phase of the crystal were analyzed through XRD, the results show that all the prepared samples correspond to the diffraction characteristics of the standard crystal card library GFO (PDF#76-1005), and no other heterophase appears. The XRD refinement results indicate that, the crystal structure is orthogonal and its space group is Pna21. As the concentration of Mg2 + rises, the lattice constant and cell volume initially increase and subsequently decrease. Additionlly, the magnetic properties of the crystal were studied through a comprehensive physical property measurement system, the magnetic transition temperature and saturation magnetization of the grown crytals also increase firstly and then decrease with the increase of Mg2 + doping content. When the Mg2 + doping amount is 0. 07, the magnetic transition temperature and saturation magnetization reach the maximum values of 187. 82 K and 8. 75 emu/g, respectively, which achieves the purpose of doping modification. [ABSTRACT FROM AUTHOR]
- Published
- 2024