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Featured Application: In various microwave plasma fields, such as Microwave Plasma Chemical Vapor Deposition (MPCVD), the dual-frequency plasma source could be used to control plasma characteristics flexibly. A dual-frequency plasma source has many advantages in applications. In this paper, a dual-frequency microwave plasma source is presented. This microwave plasma source is based on a coaxial transmission line without the resonator, and it can be operated in a wide band frequency region. Two microwaves are inputted from two ports into the plasma reactor: one is used firstly to excite the plasma and the other one is used to adjust plasma characteristics. Based on the COMSOL Multiphysics simulation, the experiment is carried out. In the experimental investigation, the plasma electron density and electron temperature can be controlled, respectively, by feeding in different frequencies from the second port, causing the particles at different energy levels to present different frequencies. This exploratory research improves the operation frequency of dual-frequency microwave plasma sources from RF to microwave. [ABSTRACT FROM AUTHOR]

A dual-frequency plasma source has many advantages in applications. In this paper, a dual-frequency microwave plasma source is presented. This microwave plasma source is based on a coaxial transmission line without the resonator, and it can be operated in a wide band frequency region. Two microwaves are inputted from two ports into the plasma reactor: one is used firstly to excite the plasma and the other one is used to adjust plasma characteristics. Based on the COMSOL Multiphysics simulation, the experiment is carried out. In the experimental investigation, the plasma electron density and electron temperature can be controlled, respectively, by feeding in different frequencies from the second port, causing the particles at different energy levels to present different frequencies. This exploratory research improves the operation frequency of dual-frequency microwave plasma sources from RF to microwave.

Abstract: The effect of high-frequency (HF) frequency on etching characteristics of SiCOH films in a CHF3 dual-frequency capacitively couple plasma driven by 13.56MHz/2MHz, 27.12MHz/2MHz or 60MHz/2MHz sources was investigated in this work. The surface structure of the films after etching and the CHF3 discharge plasma were characterized. The increase of HF frequency reduced the critical HF power for the etching, suppressed the C:F deposition at the surface of etched films, and improved the etching of SiCOH films. The improvement of etching was attributed to the increase of ions energy and F concentration at high HF frequency. [Copyright &y& Elsevier]