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2 results on '"gate shielding layer"'

1. Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT

Author

Munetoshi Fukui, Masanori Tsukuda, Toshiro Hiramoto, Kiyoshi Takeuchi, Kazuo Itou, Takuya Saraya, Toshihiko Takakura, Shinichi Suzuki, Masaki Sudo, Tamotsu Ninomiya, Ichiro Omura, Seiya Abe, and Kazunori Hasegawa

Subjects
010302 applied physics, Materials science, gate shielding layer, business.industry, 020208 electrical & electronic engineering, scaled IGBT, Biasing, 02 engineering and technology, Insulated-gate bipolar transistor, Hardware_PERFORMANCEANDRELIABILITY, Gate voltage, 01 natural sciences, self-turn-on, 0103 physical sciences, Turn (geometry), 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, business, Hardware_LOGICDESIGN
Abstract

Negative biasing of the gate voltage in a scaled insulated gate bipolar transistor (IGBT) during the off-state was modeled and found to be effective against self-turn-on failures. The required self-turn-on-free criteria were verified experimentally., 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2019), 19-23 May 2019, Shanghai, China

Published
2019

2. Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT

Author

Green Electronics Research Institute, Kitakyushu, Fukuoka, Japan, Kyushu Institute of Technology, Kitakyushu, Fukuoka, Japan, Kyushu Institute of Technology, Kitakyushu, Fukuoka, Japan, The University of Tokyo, Tokyo, Japan, Green Electronics Research Institute, Kitakyushu, Fukuoka, Japan, Tsukuda, Masanori, Sudo, Masaki, Hasegawa, Kazunori, Abe, Seiya, Saraya, Takuya, Takakura, Toshihiko, Fukui, Munetoshi, Itou, Kazuo, Suzuki, Shinichi, Takeuchi, Kiyoshi, Ninomiya, Tamotsu, Hiramoto, Toshiro, Omura, Ichiro, Green Electronics Research Institute, Kitakyushu, Fukuoka, Japan, Kyushu Institute of Technology, Kitakyushu, Fukuoka, Japan, Kyushu Institute of Technology, Kitakyushu, Fukuoka, Japan, The University of Tokyo, Tokyo, Japan, Green Electronics Research Institute, Kitakyushu, Fukuoka, Japan, Tsukuda, Masanori, Sudo, Masaki, Hasegawa, Kazunori, Abe, Seiya, Saraya, Takuya, Takakura, Toshihiko, Fukui, Munetoshi, Itou, Kazuo, Suzuki, Shinichi, Takeuchi, Kiyoshi, Ninomiya, Tamotsu, Hiramoto, Toshiro, and Omura, Ichiro

Abstract

type:Conference Paper, Negative biasing of the gate voltage in a scaled insulated gate bipolar transistor (IGBT) during the off-state was modeled and found to be effective against self-turn-on failures. The required self-turn-on-free criteria were verified experimentally., 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2019), 19-23 May 2019, Shanghai, China, source:DOI:10.1109/ISPSD.2019.8757665

Published
2019

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