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Unprecedented growth in CMOS technology and demand of high-density integrated circuits (ICs) in semiconductor industry has motivated to research community towards the development of MOS technology from micrometre regime to nano-meter regime. This paper presents the development of MOS technology from classical MOS technology to non-classical MOS technology and their extensions of learning towards the machine. Firstly, the studies are analysed with the scaling and limitations of bulk MOSFET beyond 100 nm in terms of constant and voltage field scaling and various short channel effects. Then we investigated the non-classical device architecture beyond 32 nm such as multiple-gate field-effect transistors, SOI MOSFETS, FINFETs, and gate-all-around FETs for the replacement of traditional CMOS devices. Next, we discussed the different architectures in the sub nano-technology regime. These structures include Carbon Nano Transistors, Single Electron Transistors (SET), Graphene Nano Ribbon, Nano Wire, and Nano Sheet Transistors. It is very conceivable that these kinds of devices will be utilized in the construction of high-density integrated electronic computers in near future. Lastly, we extend our studies on different machine learning method like ANN, KNN, DNN and Random Forest for the optimization of MOSFET, SOI FET, TFET, FinFET and GAA FET. [ABSTRACT FROM AUTHOR]

This article presents a novel approach to investigating a reconfigurable Dielectric Resonator antenna using Graphene Nano Ribbon (GNR) in the terahertz band. Two Elliptical shape DRAs are merged to realize High gain and radiation efficiency. The Roger-6010 is utilized to construct an Elliptical shape Dielectric Resonator (EDRA), and GNR structures are constructed on top of it to achieve reconfigurability. The radiation performance of projected EDRA is investigated in terms of 10 dB Impedance bandwidth, reflection coefficient, surface current, directivity, radiation efficiency, and gain in the frequency range from 0.55-to-0.75-THz. The proposed EDRA design has an impedance bandwidth of 15.64 %, a peak gain of 11.9dBi, peak directivity of 13.1dBi, and radiation efficiency of 97.3 %. Moreover, the reconfigurability nature is investigated by the chemical potential of the surface conductivity of graphene and then GNR-based EDRA radiation parameters. The projected EDRA is suitable for various applications in the THz band.

Multiple valued logic (MVL) can represent an exponentially higher number of data/information compared to the binary logic for the same number of logic bits. Compared to the conventional and other emerging device technologies, Graphene Nano Ribbon Field Effect Transistor (GNRFET) appears to be very promising for designing MVL logic gates and arithmetic circuits due to some exceptional electrical properties of the GNRFET, e.g., the ability to control the threshold voltage by changing the width of the GNR. Variation of the threshold voltage is one of the prescribed techniques to achieve multiple voltage levels to implement the MVL circuit. This paper introduces a design approach for ternary logic gates and circuits using MOS-type GNRFET. The designs of basic ternary logic gates like inverters, NAND, NOR, and ternary arithmetic circuits like the ternary decoder, 3:1 multiplexer, and ternary half-adder are demonstrated using GNRFET. A comparative analysis of the GNRFET based ternary logic gates and circuits and those based on the conventional CMOS and CNTFET technologies is performed using delay, total power, and power-delay-product (PDP) as the metrics. The simulation and analysis are performed using the H-SPICE tool with a GNRFET model available on the Nanohub website.

This paper proposes the usage of an adaptive meshless method – radial point interpolation method (RPIM) for the analysis of armchair graphene nano ribbon (GNR) to be used for interconnect applications. The validity and efficiency of the proposed method are demonstrated using the following three examples: one-dimensional problem, two-dimensional problem and the cantilever beams under various forces and boundary conditions. Electrostatic analysis of the GNR is performed using RPIM. The delay of the GNR is calculated using the quasi-static capacitance. It is found that the delay is reduced compared to the RKPM analysis, making it as a suitable candidate for RF interconnects. [ABSTRACT FROM AUTHOR]

DNA detection has revolutionized medical and biological research fields. It provides a wealth of medical information for each individual, which can be used in a personalized medicinal procedure in the future. Genome sequence helps to enhance our perception of inheritance, disease, and individuality. This work aims to improve DNA sequencing accuracy and the overall current signal using a novel nano pore based sensor that is developed to detect and identify the DNA bases. Herein, a novel z-shaped field effect transistor with a nano pore for the aim of DNA detection is studied, where a gate terminal is added below the center of the z-shaped graphene nano ribbon. First-principle transport calculations are used to identify the DNA bases and electronic signature. An efficient density functional theory approach combined with non-equilibrium Green’s function formalism (DFT + NEGF) are utilized to detect the transmission spectrum and current for DNA nucleo bases: Adenine, Thymine, Guanine, and Cytosine. Using transmission current, a distinctive electronic signature is generated for each DNA base to detect each DNA sequence. Various orientations and lateral position for each DNA base are considered. Moreover, the effect of decorating the developed DNA sensor with gold and silver nanoparticles on the sensor’s electrical current and transmission spectra is studied and analyzed. The results suggest that the z-shaped sensor could achieve DNA sequencing with high accuracy. The practical implementation of this work represents the capability to anticipate and cure diseases from the genetic makeup perspective.

It is well known that introducing periodic holes into graphene can be used to obtain semiconducting graphene nanomeshes (GNM). Using Molecular Dynamics (MD) simulations as well as semi-empirical Extended Hückel (EH) method, the mechanical and electronic properties of GNM heterojunction are studied. In this study the mechanical and electronic properties of graphene nanoribbons with different hole sizes and different hole shapes (circular, square and equilateral triangle) were studied. Midgap states were observed near the Fermi level, which are also affected by the geometries of the holes. Dependence of the properties on the density (ρ) was also investigated for each geometry. It has been found that GNM is significantly brittle compared to pristine graphene nanoribbons. It is observed that the relationship between the hole shape and size and the band gap is different for armchair and zigzag chirality. [ABSTRACT FROM AUTHOR]

In this paper, a planar graphene-based bandstop filter is designed and simulated for the resonant frequency of 1 THz. The transmission line model of the bandstop filter is considered, which consists of open-circuited shunt stubs that are interconnected through unit elements. The bandstop filter design is carried out from the normalized low pass Chebyshev prototype. By using frequency transformation, Richard's transformation, and Kuroda's identity, the desired bandstop filter can be designed from the low pass prototype. The graphene layer is introduced between the conductor layer and the dielectric for supporting the propagation of plasmonic waves. The simulation results show that the desired frequency response can be obtained for the designed graphene-based bandstop filter. By varying the chemical potential of the graphene layer, the resonant frequency of the bandstop filter can be tuned over the range of 0.1 THz with the constant absolute bandwidth. [ABSTRACT FROM AUTHOR]