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Indium oxide and doped indium oxide films were successfully grown utilizing a plasma-enhanced atomic layer deposition supercycling process, which was found to be an effective means of controlling films' composition and, hence, their properties. Using trimethylindium and oxygen plasma as an indium precursor and a co-reactant, respectively, a growth rate of approximately 1.26 Å per cycle was obtained based on thickness measurements by spectroscopic ellipsometry. Three distinct dopants, Sn, Ti, and Mo, have been incorporated into indium oxide. The effects of dopant type, cycle ratio of dopant to indium oxide, and thermal annealing on the structural, electrical, and optical properties were studied. The deposited films consisted of polycrystalline columnar grains perpendicular to the substrate with a cubic bixbyite structure and [111] as the favored growth direction. Thermal annealing had a significant effect on the film characteristics, resulting in an order of magnitude reduction in resistivity, as well as changes in transmittance in the near-infrared (NIR) and ultraviolet (UV) regions. The lowest resistivities achieved for Sn-doped, Ti-doped, and Mo-doped were 2.8 × 10−4, 4.2 × 10−4, and 6.1 × 10−4 Ω cm, respectively. The changes are attributed to dopant activation, as the UV shift between the differently doped samples may be linked to the Moss–Burstein effect and the NIR behavior can be explained by an increase in charge carrier density, as predicted by the Drude model. The three dopants primarily provide a trade-off between electrical resistance and NIR transparency. Mo-doped films exhibited the highest near-infrared transparency, while Sn-doped films offered the lowest sheet resistance. [ABSTRACT FROM AUTHOR]

Gallium nitride (GaN)- based lasers are extensively employed in display, lighting, and communication applications due to their visible laser emission. Despite notable advancements in their performance and reliability, sustained device functionality over extended periods remains a challenge. Among the diverse mechanisms contributing to degradation, the deterioration of quantum wells poses a persistent obstacle. In this study, we investigated the atomic-level degradation of quantum wells within GaN-based laser diodes utilizing atom probe microscopy. Our analysis revealed a substantial increase in indium fluctuation, accompanied by the formation of indium protrusions at the quantum well interfaces, which provides a credible explanation for the observed increase in FWHM (full width at half maximum) of the spontaneous spectra of lasers following prolonged operation. Additionally, magnesium analysis yielded no evidence of diffusion into the quantum well region. Combined with prior studies, we attribute the degradation of quantum wells primarily to the formation of indium-related non-radiative recombination centers. [ABSTRACT FROM AUTHOR]

InN holds great promise for a wide range of applications, including broadband optical devices, high-frequency electronic devices, and serving as a substrate for highly sensitive gas detectors and efficient catalysts. Nevertheless, production of high-quality InN thin films through epitaxy has remained a significant challenge. This is primarily due to complexities arising from the low dissociation temperature and the high N2 equilibrium pressure of InN, which lead to formation of numerous nitrogen vacancies and a propensity to generate indium metal nanoparticles. Efficacy of the indium bilayer pre-deposition method for InN film growth has been established in prior studies. In this work, we introduce a specialized hydrogen insertion method to further enhance nitridation of the indium bilayer. The corresponding kinetic mechanism has been demonstrated through theoretical simulations and practical epitaxy experiments, leading to the development of an optimized hydrogen insertion process. This research represents a substantial improvement over existing InN epitaxial methods that involve control of the indium bilayer and introduces a novel mechanism for enhancing InN heteroepitaxy. [ABSTRACT FROM AUTHOR]

In this work, a low-profile optical transparent wideband metamaterial absorber based on radiation–absorption reciprocal theory is proposed. The top layer and bottom layer are composed of indium tin oxide–polyethylene terephthalate films, and the middle layer is a transparent substrate polymethyl methacrylate. The method of transparent wideband absorption using reciprocal theory is proposed to guide the design. Based on characteristic mode analysis and calculated equivalent aperture efficiency, the absorber consisting of composite resonators is analyzed and designed. The equivalent circuit model and surface current distributions are studied to verify the design. The numerical results show that high absorption of greater than 90% in the frequency range of 5.7–16.4 GHz is obtained. A wideband absorption rate of greater than 80% at a 60° incident angle under TM polarization and an absorption rate of greater than 65% at a 60° incident angle under TE polarization are obtained. The proposed design has the advantages of broadband absorption, polarization insensitivity, light transmittance of more than 70%, and compact structure, which can be applied to special scenes that require optical transparency, such as anechoic chamber glass and cockpit glass. [ABSTRACT FROM AUTHOR]

We investigate the sub-bandgap optical absorption (SOA) in 300-nm-thick Al1−xInxN alloys used in cladding layers of edge-emitting laser diodes and distributed Bragg reflectors of vertical-cavity surface-emitting lasers. Al1−xInxN alloys, with indium content x ranging from 0.114 to 0.185, were grown by metal-organic chemical vapor deposition on a c-plane GaN/sapphire template. SOAs on 300-nm-thick thin films were characterized using photothermal deflection spectroscopy (PDS). Thermal emission, such as nonradiative recombination with phonon emission, is the dominant energy relaxation process occurring after SOA in Al1−xInxN alloys. The absorption coefficient of the SOA was estimated to be 0.6–7.0 × 103 cm−1 in these samples by combining PDS and spectroscopic ellipsometry. The drastic increase in the SOA, when x exceeded the lattice-matched composition of the GaN/sapphire template, indicates that impurities, vacancy-type defects, and their complexes with increasing x are possible candidates that result in SOA in Al1−xInxN alloys. [ABSTRACT FROM AUTHOR]

[Display omitted] • The use of scarce indium has been avoided. • AgGaS 2 has been attested to its encouraging prospect for H 2 O 2 photosynthesis. • Synthesized AgGaS 2 features hollow nanoflake-cluster morphology. • AgGaS 2 on carbon nitride edges forms novel p-n junction for performance enhancement. • Photoreduction of Ag+ has been suppressed thus improving the stability of AgGaS 2. Hydrogen peroxide (H 2 O 2) is a promising solar fuel and its photocatalytic production has been regarded as a green and sustainable alternative to the conventional anthraquinone method. Ternary metal sulfide photocatalysts with unique superiorities are arousing increasing attention. However, photocorrosion still exists and the extensive use of scarce indium renders a limited prospect. Herein, silver thiogallate (AgGaS 2) with latent advantages in electronic properties and higher reserves of gallium than indium is reported for the first time in H 2 O 2 photosynthesis. Experiments have unveiled that the activity of single unmodified AgGaS 2 surpasses that of many counterparts. Furthermore, a novel type-Ⅱ heterostructure with hollow AgGaS 2 nanoflake-clusters grown on the edges of carbon nitride has been constructed with enhanced photocatalytic performance. In the presence of isopropanol as a sacrificial reagent, the optimum heterostructure produces H 2 O 2 with concentration 3.4 times higher than that by AgGaS 2 in a long-term reaction. Besides, it maintains 87 % of initial activity after five cycles, outperforming that of AgGaS 2 (35 %). Improvement and inactivation mechanisms are carefully investigated, confirming that the internal electric fields at the heterointerfaces between AgGaS 2 and carbon nitride promote the separation of photogenerated charge carriers and suppress the photoreduction of Ag+, which are main reasons for the enhanced activity and stability of the heterostructure. This work has attested to the potential of indium-free AgGaS 2 in H 2 O 2 photosynthesis with the elucidated improvement and inactivation mechanisms for follow-up optimizations. [ABSTRACT FROM AUTHOR]

Two indium phosphite–oxalates with three-dimensional structures have been synthesized under the structure-directing effect of histidine. In compound 1, histidine molecules act as terminal ligands, whereas in compound 2, they function not only as terminal ligands but also as extra framework cations. The dual role of histidine induces compound 2 to form a noncentrosymmetric structure with an interesting second-harmonic generation response. Both compounds 1 and 2 exhibit blue luminescence under ultraviolet light irradiation, originating from the histidine molecules. [ABSTRACT FROM AUTHOR]

Copyright of Nonferrous Metals (Extractive Metallurgy) is the property of Beijing Research Institute of Mining & Metallurgy Technology Group and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Lates calcarifer (Bloch) is a potential candidate fish species for culture in marine and brackishwater. A continuous gill cell line was derived from L. calcarifer by the explant culture method and has been passaged for 132 times, in Leibovitz's L-15 medium containing 10% fetal bovine serum (FBS) at 28 °C. The cells showed a rate of recovery between 90 and 95% after being successfully cryopreserved at various passage levels and formed monolayer in 2–3 days without any morphological changes. Immunophenotypic analysis of the SBG cell line revealed that they are of epithelial origin. Polymerase chain reaction assay using mitochondrial 12S rRNA primer specific to L. calcarifer was used to confirm the authenticity of the established gill cell line origin from seabass. The transfection efficiency was evaluated in Seabass Gill (SBG) cell line using pEGFP-N1 and Lipofectamine™ 3000. Transfection efficiency was found to be between 13 and 16%. The cytotoxicity of three different metal detecting probes was evaluated by MTT and Alamar blue assays to determine safe concentration. The result revealed that SBG cell line can be applied for recognition of metals using probes. The current study established, for the first time, a gill-derived cell line (SBG) from Lates calcarifer and its application for the detection of intracellular indium, mercury, and lutetium ions by specific fluorescent probes. [ABSTRACT FROM AUTHOR]

Herein, we report the synthesis of three indium complexes (1–3) supported by different chelating ligands (L1–L3). The indium metal complexes were characterized by using multinuclear NMR, and their solid-state structures were confirmed by single-crystal X-ray crystallography. The indium complex 1 (5 mol%) effectively reduced nitroarenes in the presence of phenylsilane and NaI. Nitroarenes containing different functionalities were reduced under standard conditions to give the corresponding amines in good yields. [ABSTRACT FROM AUTHOR]

In situ X-ray reciprocal space mapping was performed during the interval heating and cooling of InGaN/GaN quantum wells (QWs) grown via metal–organic vapor phase epitaxy (MOVPE). Our detailed in situ X-ray analysis enabled us to track changes in the peak intensities and radial and angular broadenings of the reflection. By simulating the radial diffraction profiles recorded during the thermal cycle treatment, we demonstrate the presence of indium concentration distributions (ICDs) in the different QWs of the heterostructure (1. QW, bottom, 2. QW, middle, and 3. QW, upper). During the heating process, we found that the homogenization of the QWs occurred in the temperature range of 850 °C to 920 °C, manifesting in a reduction in ICDs in the QWs. Furthermore, there is a critical temperature (T = 940 °C) at which the mean value of the indium concentration starts to decrease below 15% in 1. QW, indicating the initiation of decomposition in 1. QW. Moreover, further heating up to 1000 °C results in extended diffuse scattering along the angular direction of the diffraction spot, confirming the propagation of the decomposition and the formation of trapezoidal objects, which contain voids and amorphous materials (In-Ga). Heating InGaN QWs up to T = 1000 °C led to a simultaneous decrease in the indium content and ICDs. During the cooling phase, there was no significant variation in the indium concentrations in the different QWs but rather an increase in the defect area, which contributes to the amplification of diffuse scattering. A comparison of ex situ complementary high-resolution transmission microscopy (Ex-HRTEM) measurements performed at room temperature before and after the thermal cycle treatment provides proof of the formation of four different types of defects in the QWs, which result from the decomposition of 1. QW during the heating phase. This, in turn, has strongly influenced the intensity of the photoluminescence emission spectra without any detectable shift in the emission wavelength λMQWs. [ABSTRACT FROM AUTHOR]

Indium compounds are used in manufacturing displays of mobile phones and televisions. These compounds cause interstitial pneumonia in workers and lung cancer in animals, but their precise mechanisms are unclear. In this study, we performed microarray analysis of gene expression in lung tissues of indium-exposed rats. Male Wistar rats (8-week-old) were exposed to indium oxide (In2O3, mean particle diameter 0.14 μm) and indium-tin oxide (ITO, mean particle diameter 0.95 μm) by intratracheal instillation (10 mg indium/kg body weight/instillation) twice a week and five times in total. These rats were sacrificed immediately, 3 weeks and 12 weeks after the last instillation. Hematoxylin and eosin and Masson's trichrome staining showed that indium compounds induced infiltration of neutrophils and macrophages into alveolar space, and fibrosis around bronchial epithelium and in alveolar wall. Microarray analysis revealed that In2O3 and ITO significantly upregulated 233 and 676 genes at 12 weeks, respectively (> twofold, p < 0.05 by ANOVA + Tukey's test). In2O3 and ITO largely upregulated Lcn2 (lipocalin-2) (49.4- and 91.8-fold), S100a9 (30.2- and 46.5-fold) and S100a8 (11.5- and 22.0-fold), respectively. Metascape database predicted that these genes participate in immunomodulatory and inflammatory responses. Real-time PCR confirmed that these genes were upregulated by indium compounds throughout the experiments. In Western blotting, S100A9 expression was significantly increased by indium exposure, whereas LCN2 expression was only slightly increased. Fluorescent immunohistochemistry revealed that S100A9 and S100A8 were expressed in alveolar epithelial cells and neutrophils in indium-exposed rats. These results suggest that S100 proteins contribute to indium-induced lung diseases via neutrophil-mediated inflammatory responses. [ABSTRACT FROM AUTHOR]

X‐ray photoelectron spectroscopy (XPS) is widely employed across various research fields due to its surface and chemical sensitivity. However, accurate interpretation poses a challenge due to the lack of comprehensive reference data in the literature, leading to misinterpretation, especially among novice users. Analyzing the chemical state of indium and indium‐containing compounds is particularly challenging due to subtle shifts in the binding energies of the commonly used 3d core line. This paper presents and discusses a collection of reference data, including the In 3d, In 3p, In 4d, In MNN, and relevant counter ion signals. Additionally, it explores other useful information such as the modified Auger parameter and Wagner (or chemical state) plots. The utility of X‐ray–induced Auger electrons is demonstrated in the speciation of mixed systems. [ABSTRACT FROM AUTHOR]

Copyright of Nonferrous Metals (Extractive Metallurgy) is the property of Beijing Research Institute of Mining & Metallurgy Technology Group and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

The development of an analytical method for determining the properties of quantum dots (QDs) is crucial for improving the optical performance of QD‐based displays. Therefore, synchrotron‐based X‐ray photoelectron spectroscopy (XPS) is designed here to accurately characterize the chemical and structural differences between different QDs. This method enables the determination of the reason for the minimal differences between the optical properties of different QDs depending on the synthesis process, which is difficult to determine using conventional methods alone. Combined with model simulations, the XPS spectra obtained at different photon energies reveal the internal structures and chemical‐state distributions of the QDs. In particular, the QD synthesized under optimal conditions demonstrates a relatively lower degree of oxidation of the core and more uniformly stacked ZnSe/ZnS shell layers. The internal structures and chemical‐state distributions of QDs are closely related to their optical properties. Finally, the synchrotron‐based XPS proposed here can be applied to compare nearly equivalent QDs with slightly different optical properties. [ABSTRACT FROM AUTHOR]

In recent years, sugar alcohols have gained significant attention as organic phase change materials (PCMs) for thermal energy storage due to their comparably high thermal storage densities up to 350 J/g. In a computational study, outstandingly high values of up to ~ 450–500 J/g have been postulated for specific higher-carbon sugar alcohols. These optimized structures feature an even number of carbon atoms in the backbone and a stereochemical configuration in which all hydroxyl groups are in an 1,3-anti-relationship, as found in the natural hexitol d-mannitol. However, these manno-configured higher-carbon sugar alcohols have not been experimentally investigated as PCMs yet and described synthetic routes are elaborate multiple steps syntheses. Therefore, we aimed to synthesize sugar alcohols of the manno-series with a concise synthetic protocol based on the indium-mediated acyloxyallylation (IMA) of aldoses. En route the C2-epimers were easily accessible, namely gluco-configured sugar alcohols, bearing one set of hydroxyl groups in a suboptimal 1,3-syn-realtionship. The synthesized compounds were found to possess thermal properties consistent with the predicted values, and the "perfect" higher-carbon sugar alcohol with eight carbon atoms was found to have indeed an outstanding high latent heat of fusion of ~ 380 J/g with a melting point of 260 °C. [ABSTRACT FROM AUTHOR]

Indium-doped zinc oxide (ZnO:In) thin films were prepared using the spray pyrolysis technique, and the effects of indium concentration on the structural, optical, electrical, and sensing properties of the ZnO:In films were investigated. The indium concentration was varied between 0 wt.% and 15 wt.%. The results show a polycrystalline structure for all layers using x-ray diffraction. The lowest sheet resistance of approximately 120 Ω/□ was achieved with an indium concentration of 5 wt.% in the starting solution. The morphological properties of the thin films were investigated using field-emission scanning electron microscopy. The results indicate that an increase in the indium concentration disrupts the nano-granular structure of the surface, the surface becomes wrinkled, and a snowflake-like pattern is formed on the surface of the thin film. The ethanol sensing properties of the samples were studied using an electric circuit. Sensing parameters including the dynamic response, sensitivity, and response/recovery times of the samples were investigated. For an ethanol concentration of 200 ppm, the gas response of the pure ZnO layer was about 1.05. An increase in the indium concentration to 15 wt.% was found to improve the gas response of the samples. For an ethanol concentration of 200 ppm, the gas response of the ZnO:In (15 wt.%) layer increased to 1.82. [ABSTRACT FROM AUTHOR]

InAs/GaAs quantum dots (QDs) appear promising for optoelectronic applications. However, the inhomogeneous broadening caused by natural strain and the non-uniform size distribution deteriorates the device performance based on multi-stacked QD layers. In this study, In-flush was incorporated during the epitaxy, and the photoluminescence (PL) linewidth was significantly narrowed to 26.1 meV for the flushed sample and maintained to 27.3 meV for the unflushed sample. The flushed sample shows better device performance in threshold current (0.229 to 0.334 A at 15 °C), power (1.142 to 1.113 W at 15 °C), and characteristic temperature (51 to 39 K in the range of 55~80 °C) compared with the unflushed sample. [ABSTRACT FROM AUTHOR]

Indium-alkyl NCN pincer complexes supported by amine and imine donors are active catalysts for the ring opening polymerization of lactide. The amine indium complexes are significantly more active for polymerization due to the decoordination of the amine donors at higher temperatures. Solid state structures of the imine and amine indium complexes indicate that the imine–indium bonds are stronger than the analogous amine–indium bonds. Higher molecular weight polymers that were not observable by MALDI-TOF were shown to be linear by comparing their intrinsic viscocities with those of known linear polymers. The alkyl indium complexes are more active than the analogous alkyl aluminum complexes but are prone to transesterification reactions. [ABSTRACT FROM AUTHOR]

Micro-light-emitting diodes (microLEDs) can improve existing displays and enable disruptive technologies like augmented reality (AR). However, ignoring smaller devices near 1 μm overlooks (at least) two additional size-dependent effects that improve microLED efficiency: directionality and extraction efficiency increase as size decreases, and surface recombination is reduced as indium content increases (in InGaN microLEDs). This study shows that both combined effects counteract size-dependency efficiency droop, where the magnitude of positive effects increases with indium concentration (from blue to red) in InGaN. As the microLEDs' diameter reduced from 50 to 1 μm, the external quantum efficiency (EQE) of 500 nm microLEDs fell from 16.5% to 14%, while the EQE of 600 nm devices increased from 2.7% to 7.1%. Although the efficiency of conventionally sized AlInGaP LEDs remains significantly higher than InGaN, the results of this study suggest that very high EQE of red microLED with sizes approaching 1 μm can be realized using InGaN materials instead of AlInGaP. In addition to improving performance, consolidating to an entirely InGaN-based microLED display would reduce costs and streamline resources to help achieve AR and other next-generation displays. [ABSTRACT FROM AUTHOR]

This research explores the gas-sensing characteristics of undoped SnO 2 , as well as indium (In:SnO 2) and titanium (Ti:SnO 2) doped SnO 2 nanostructures, which were synthesized using a homogeneous precipitation technique. Structural analyses indicate the presence of a tetragonal rutile phase with a preferred orientation along the (110) plane, with both doped samples showing shifts towards higher angles. Raman spectroscopy confirms the vibrational modes associated with SnO 2 in both the pure and In: SnO 2 samples, while the Ti: SnO 2 sample reveals vibrational modes corresponding to both SnO 2 and TiO 2. Fourier-transform infrared (FTIR) spectroscopy indicates shifts in the O-Sn-O and Sn-O bonds in the doped samples, suggesting the effects of doping. X-ray photoelectron spectroscopy (XPS) results imply a combination of SnO and SnO 2 phases in the undoped SnO 2 , while In: SnO 2 samples display In-O bonding and the presence of metallic indium, and Ti: SnO 2 shows Ti-O bonding. Scanning electron microscopy (SEM) images show agglomerated particles in the pure and In-doped samples, whereas the Ti-doped samples exhibit a flake-like structure. Transmission electron microscopy (TEM) analysis verifies the integration of dopants into the SnO 2 crystal lattice, with average crystallite sizes measured at 44.46 nm for undoped, 34.06 nm for In: SnO 2 , and 42.63 nm for Ti: SnO 2. Gas-sensing experiments for CO 2 detection reveal that In: SnO 2 demonstrates the most significant sensing response. These results underscore the impact of doping on the structural, morphological, and gas-sensing attributes of SnO 2 nanostructures, offering important insights for the advancement of efficient carbon dioxide sensors. [ABSTRACT FROM AUTHOR]

Herein, stacked films of WO3 separated by indium nanosheets are fabricated as quad‐band antennas suitable for high‐frequency applications. The amorphous WO3 films and indium nanosheets are coated onto each other using the thermal evaporation technique under a high vacuum pressure of 10−5 mbar. The stacked layers of Pt/WO3/In/WO3/Pt are structurally and electrically characterized. The tunneling‐type quad‐band antennas are tested in the driving frequency domain of 0.01–1.80 GHz and a low signal amplitude of 0.10 V. It is observed that the insertion of indium nanosheets between layers of WO3 remarkably increases the width of the tunneling barrier from 55 to 70 nm without altering the tunneling barrier height. This also enhances the cutoff frequency at a quad‐band frequency of 1.80 GHz from 10 GHz to 1.46 THz and increases the return loss values from ≈5 to 21 dB. A widely tunable cutoff frequency extending from 0.30 GHz to 1.46 THz can be obtained based on the selected driving signal frequency. The microwave‐controlling features of the Pt/WO3/In/WO3/Pt devices, with their high cutoff frequency and high power transmission ratios at the quad‐band frequency, make them attractive for 6G technology. [ABSTRACT FROM AUTHOR]

A study of submicron‐sized InGaN containing a single quantum well, intended for use as nano‐light‐emitting diodes in high‐resolution display based on direct emission, is presented. Herein, the structures are grown by a bottom‐up method from holes in a masked GaN/sapphire substrate and are intended for red emission. Many of the platelets show dark lines in cathodoluminescence images, previously identified as stacking mismatch boundaries. These introduce local shifts in the reduced emission, perhaps related to local strain. However, the total emission position stays unaffected, just reduced in intensity. Due to an unintended variation in the size of the c‐facet, there is a gradient in the indium content which, in turn, leads to a significant shift in the peak position of the quantum well emission. With increasing probe current there is a slight blueshift, likely a result of the quantum confined Stark effect. [ABSTRACT FROM AUTHOR]

The X-ray Rietveld method has been used to refine the structure, determine the lattice periods, and study the phase composition of the samples of multicomponent polycrystalline solid solutions TbCo Inx (х = 0, 0.05, 0.1, 0.15, 0.20, 0.25, 0.3, 0.35, 0.4), which are characterized by large values of magnetostriction saturation. With an increase in the indium concentration, the content of the TbCo2 phase with a Laves phase structure decreases, the content of the TbCo3 phase increases, and a Tb11Co4In9 phase is formed. The lattice period in the TbCo2 compound (sp. gr. Fd m) changes nonlinearly: increases in the range of x = 0–0.1 from a = 7.209(8) Å to a = 7.216(1) Å due to the replacement of cobalt atoms with indium atoms, having a larger radius. Then, in the concentration range of x = 0.15–0.4, it decreases to a = 7.205(1) Å at х = 0.4 due to the replacement of terbium atoms with indium and formation of structural defects. [ABSTRACT FROM AUTHOR]

Sphalerite is the main Zn ore mineral and is the primary source of Cd, Ge and In, and a minor source of Ga. Owing to a shift from fossil fuel to renewable energy sources, these four minor elements have progressively become more important to the economy. Despite this, resources of Cd, Ga, Ge and In are rarely reported, as these metals are not considered material to the economics of resource development. As a result, the distribution of these elements between and within deposits is poorly known, and national and international resources are largely unreported. Following previous studies, we have compiled analytical data for Cd, Ga, Ge and In from sphalerite and used global and local ore geochemical datasets to assess geochemical controls on the concentration of these elements in Zn deposits. Our results are similar to those of previous studies and suggest that lower-temperature deposits are enriched in Ge, whereas higher-temperature deposits are enriched in In. However, modelling of hydrothermal geochemistry indicates other factors are important in concentrating these metals. In particular, the oxidation state of the fluid (oxidised vs reduced) and the depositional mechanisms also have a strong influence in Ga, Ge and In enrichment. Reduction of oxidised fluids is particularly effective in depositing Ge, whereas cooling very effectively deposits In and, in some cases, Ge. As a consequence, some higher-temperature deposits (e.g. high sulfidation epithermal and some volcanic-hosted massive sulfide) can be Ge-enriched, and some lower-temperature deposits (e.g. siliciclastic–carbonate shale-hosted deposits) can be enriched in In. Using the existing ore geochemical data and calculated characteristic Ge/Zn and In/Zn ratios, indicative estimates have been made on the endowment of Australian Zn deposits of Ge and In. These estimates highlight the potential of the North Australian Zinc Belt for Ge and for VHMS deposits for In. Although there is a large amount of uncertainty in the estimates, they are indicative of the potential for these metals in Australia. KEY POINTS: The efficacy of metal leaching from regional alteration zones depends on the temperature of alteration and the alteration minerals. For example, low-temperature (<200 °C) chlorite-rich zones tend to sequester zinc, whereas zinc is leached from higher-temperature, chlorite-rich zones. The concentrations of Ga, Ge and In in sphalerite and zinc ores depend not only on temperature but also on the redox state of the ore fluids and sphalerite depositional mechanisms. The endowment of Ge, In and other critical minerals in zinc deposits can be/has been estimated using typical (median) ratios of these elements to zinc for individual deposits or deposit types and zinc endowments of individual deposits. [ABSTRACT FROM AUTHOR]

Herein, we investigate micro-light-emitting diodes (μLEDs) ranging in size from 160 × 160 to 10 × 10 μm2 and report that the differences in the behavior of InGaN-based blue (∼460 nm) and red (∼600 nm) μLEDs are related to carrier localization. The external quantum efficiency (EQE) of blue μLEDs decreases with size regardless of sidewall conditions, whereas that of red μLEDs is insignificant due to carrier localization. Atomic probe tomography examination of 30%, 15%, and 7.5% indium-concentrated InGaN layers used in red μLEDs shows that higher indium concentrations result in greater indium fluctuations, which promote carrier localization and thus shorten the diffusion length of carriers. Finally, by observing the peak wavelength of electroluminescence and the current density at peak EQE for both blue and red μLEDs, we find that radiative recombination rate in μLEDs is likely to be chip size dependent. [ABSTRACT FROM AUTHOR]

The dependence of unit cell parameters (UCPs) of LnCrO3 (Ln = La–Lu, Y) orthochromites on effective ionic radii of Ln3+ cations is analyzed. It is shown that these dependences can be described by the following equations: Å; b = 1.5893RLn + 5.9242 Å, c = 1.8469 RLn + 3.3691 Å, and V = 121.85RLn + 93.97 Å3, where RLn is the effective ionic radius of the Ln3+ cation with a confidence probability of 0.775, 0.989, 0.998, and 0.990, respectively. The obtained equations can be use in a priory calculations of the UCPs of isovalent solid substitution solutions of REE orthochromites (including high-entropy ones) using average effective radii of substituted Ln3+ cations. The tolerance factors of REE-, bismuth-, thallium-, and indium orthochromites are calculated. The possibility that an orthorhombic perovskite structure can be formed by the interaction of REE orthochromites with non-isostructural BiCrO3 and ScCrO3 chromites is considered. [ABSTRACT FROM AUTHOR]

Indium–salen complexes with electron‐donating 9,9‐dimethyl‐9,10‐dihydroacridine (DMAC) groups at positions 4 (DMACIn1) and 4 and 6 (DMACIn2) were synthesized and characterized to investigate the effect of the substituents number and structural rigidity on photophysical properties. The single crystal structure of DMACIn1 revealed highly twisted arrays (83–89°) between the DMAC groups and salen moieties and a nearly square‐pyramidal geometry around the indium center. Both complexes exhibited green fluorescence in toluene at 298 K and in rigid states (in toluene at 77 K and in a film), which originates from intramolecular charge transfer (ICT) transitions. The absolute photoluminescence quantum yields (PLQYs) of DMACIn1 and DMACIn2 were low in solution but high in the rigid states. The film‐state PLQY of DMACIn2 (59.5%) was more than five‐fold higher than that of DMACIn1 (11.1%). A similar result was observed in toluene at 77 K. These findings were rationalized in terms of the beneficial effects of structural rigidity and higher number of DMAC donors on ICT‐based radiative decay. The experimental results agreed with those of computational studies. [ABSTRACT FROM AUTHOR]

The urgent necessity to remove dangerous lead from the commonly used metal halide perovskite solar cells (PSCs) requires the exploration of effective and reliable lead-free perovskite substitutes. In this study, we conduct a performance analysis of Sn-based PSCs incorporating a low-temperature indium sulfide electron transporting layer (ETL) and use SCAPS-1D simulation to evaluate the PSC performance. We investigate multiple parameters that determine the PSC performance, such as the thickness and defect density of the Sn-based perovskite layer, as well as the defect density at the ETL/perovskite interface. The optimization procedure produced outstanding outcomes with maximum power conversion efficiency (PCE) of 21.57%, 24.03%, and 21.93% for CsSnI3, FASnI3, and MASnI3, respectively. The proposed device structure and parameters could potentially advance the experimental work and provide a new approach for optimizing the construction of Sn-based PSCs, thereby opening up new possibilities for future study in this field. [ABSTRACT FROM AUTHOR]