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The unique properties of 2D‐materials like graphene are exploited in various electronic devices. In sensor applications, graphene shows a very high sensitivity, but only a low specificity. This shortcoming can be mastered by using heterostructures, where graphene is combined with materials exhibiting high analyte selectivities. Herein, this study demonstrates the precise deposition of nanoporous metal‐organic frameworks (MOFs) on graphene, yielding bilayers with excellent specificity while the sensitivity remains large. The key for the successful layer‐by‐layer deposition of the MOF films (SURMOFs) is the use of planar polyaromatic anchors. Then, the MOF pores are loaded with ionic liquid (IL). For functioning sensor devices, the IL@MOF films are grown on graphene field‐effect transistors (GFETs). Adding a top‐gate electrode yields an ion‐gated GFET. Analysis of the transistor characteristics reveals a clear Dirac point at low gate voltages, good on‐off ratios, and decent charge mobilities and densities in the graphene channel. The GFET‐sensor reveals a strong and selective response. Compared to other ion‐gated‐FET devices, the IL@MOF material is relatively hard, allowing the manufacturing of ultrathin devices. The new MOF‐anchoring strategy offers a novel approach generally applicable for the functionalization of 2D‐materials, where MOF/2D‐material hetero‐bilayers carry a huge potential for a wide variety of applications. [ABSTRACT FROM AUTHOR]

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Organic ion-gated transistors (OIGTs) demonstrate commendable performance for versatile neuromorphic systems. However, due to the fragility of organic materials to organic solvents, efficient and reliable all-photolithography methods for scalable manufacturing of high-density OIGT arrays with multimode neuromorphic functions are still missing, especially when all active layers are patterned in high-density. Here, a flexible high-density (9662 devices per cm 2 ) OIGT array with high yield and minimal device-to-device variation is fabricated by a modified all-photolithography method. The unencapsulated flexible array can withstand 1000 times' bending at a radius of 1 mm, and 3 months' storage test in air, without obvious performance degradation. More interesting, the OIGTs can be configured between volatile and nonvolatile modes, suitable for constructing reservoir computing systems to achieve high accuracy in classifying handwritten digits with low training costs. This work proposes a promising design of organic and flexible electronics for affordable neuromorphic systems, encompassing both array and algorithm aspects., (© 2024 Wiley‐VCH GmbH.)

With the rapid development of the Internet of Things, the amount of data we involved in our daily life is growing exponentially, which poses significant challenges for data processing and transmission to the conventional terminal sensors that passively acquire external data. Inspired by biological sensory nervous systems, building artificial intelligent sensory systems with both sensing and computing capability is regarded as a promising way to address these challenges, by which the acquired data can be preprocessed locally and timely before transmitting them to the remote server for further processing. Ion‐gated transistors (IGTs), which have been widely used in sensors and have been recently investigated for neuromorphic computing, exhibit great potential in this domain. Herein, the essential operation principles, device structures, and electrical characteristics of IGT are introduced, and the recent developments in biosensors, neuromorphic computing, and intelligent sensors with near‐sensor computing and in‐sensor computing modes are summarized. To conclude, the current challenges and future development of IGT for intelligent sensory systems are presented. [ABSTRACT FROM AUTHOR]

Poly-3-hexylthiophene (P3HT) is a benchmark semiconducting polymer in organic electronics. Ion-gated transistors (IGTs), making use of ionic gating media, are particularly interesting for flexible and printable␣organic electronic applications. The molecular weight of P3HT is known to affect the morphology and structure of the corresponding films and, ultimately, the performance of devices based thereon. Here we report on IGTs based on films of P3HT with different molecular weights (∼ 20 kDa, 30–50 kDa and 80–90 kDa) and, as the gating medium, the well-investigated ionic liquid [EMIM][TFSI], to investigate the effects of the film morphological and structural properties on charge carrier transport and, eventually, IGT performance. P3HT films were deposited over rigid (SiO2/Si) and flexible (polyimide) substrates. All the P3HT IGTs could be operated at low voltage (about 1 V) and achieved a hole mobility larger than 0.1 cm2 V−1 s−1, pointing to the extremely favorable [EMIM][TFSI]/P3HT interface for IGT applications, for all the molecular weights investigated. We finally investigated the stability of flexible devices considering two different bending radii (R = 10 mm and R = 5 mm). [ABSTRACT FROM AUTHOR]

Respiratory infectious diseases (H1N1, H5N1, COVID-19, etc.) are pandemics that can continually spread in the air through micro-droplets or aerosols. However, the detection of samples in gaseous media is hampered by the requirement for trace amounts and low concentrations. Here, we develop a wearable bioelectronic mask device integrated with ion-gated transistors. Based on the sensitive gating effect of ion gels, our aptamer-functionalized transistors can measure trace-level liquid samples (0.3 μL) and even gaseous media samples at an ultra-low concentration (0.1 fg/mL). The ion-gated transistor with multi-channel analysis can respond to multiple targets simultaneously within as fast as 10 min, especially without sample pretreatment. Integrating a wireless internet of things system enables the wearable mask to achieve real-time and on-site detection of the surrounding air, providing an alert before infection. The wearable bioelectronic masks hold promise to serve as an early warning system to prevent outbreaks of respiratory infectious diseases., Competing Interests: We have a pending patent related to this work, and the authors declare no competing interests., (© 2022 Elsevier Inc.)