In the first part of this thesis the influence of silicon (Si) alloying on the thermal stability of alumina thin films was investigated by means of transmission electron microscopy (TEM). These alumina thin films were deposited by filtered cathodic arc (FCA) and by magnetron sputter ion plating (MSIP). Amorphous and crystalline FCA alumina thin films were deposited on Si wafers, and crystalline MSIP alumina thin films were deposited on Si wafers and on cemented carbide cutting tools. The thin films were annealed at elevated temperatures before TEM investigations to determine their thermal stability. In the second part of this thesis MSIP alumina thin films, deposited on cemented carbide cutting tools, were investigated in the TEM after using them in several cutting tests. Furthermore, so called WHIPOX-material was investigated. WHIPOX is an alumina fibre matrix composite with a porous matrix. TEM investigations of Al2O3 thin films showed that Si-alloying stabilizes the amorphous and the gamma-Al2O3 phases. Si-alloying of the amorphous FCA Al2O3 thin film led to at least a 290 °C higher crystallization temperature. In addition investigations of annealed thin films showed that Si-alloying increases the thermal stability of gamma-Al2O3 by at least 100 °C. The morphology of the porous, nanocrystalline FCA gamma-Al2O3 layer was stabilized to a 300 °C higher temperature. By Si-alloying of crystalline MSIP Al2O3 thin films deposited on Si wafers, the thermal stability range of gamma-Al2O3 was increased by 100 °C and the formation temperature of the alpha-Al2O3-phase was increased by 250 °C. Moreover Si influenced the phase-transfomation sequence: The unalloyed crystalline MSIP Al2O3 thin film showed a direct transition of the gamma- into the alpha-phase, while the Si alloyed MSIP Al2O3 thin film first transformed into theta- before the formation of alpha-Al2O3 was observed. By using another substrate, such as cemented carbide cutting tools coated with (Ti,Al)N for improved adhesion, the coating system could be used in cutting tests. However, investigations of the annealed coating system proved, that a (Ti,Al)N-layer decreases the thermal stability range of gamma-Al2O3: The formation of alpha-Al2O3 is accompanied by the decomposition of the metastable, cubic (Ti,Al)N-layer into the cubic TiN- and the hexagonal AlN-phase, the oxidation of the (Ti,Al)N-layer and the Ti-diffusion into the Al2O3-layer. The thermal stability of gamma-Al2O3 could be enhanced by annealing in vacuum instead of annealing in atmosphere as well as by Si-alloying of the Al2O3- and (Ti,Al)N-layers. The combined results lead to the assumption that Si was not incorporated into the Al2O3-lattice, but segregated preferentially as amorphous Si or SiO2 at grain boundaries of the nanocrystalline gamma-Al2O3-grains and thereby reduced diffusion and hence crystal growth. Thus, gamma-Al2O3 was presumably stabilized due to Si-alloying by stabilizing the size of the nanocrystals. In case of the Si-alloyed Al2O3/(Ti,Al)N-layers deposited on cemented carbide, the Si alloying of the (Ti,Al)N-layer can also explain the stabilization of gamma-Al2O3. Less (Ti,Al)N-layer-oxidation can also be explained by the amorphization effect of Si-alloying on the Al2O3-layer, which was observed for all crystalline FCA and MSIP Al2O3 thin films. The higher the amorphous content, the less grain boundaries and therefore possible diffusion pathways for O, Al and Ti exist. Investigations of the MSIP Al2O3/(Ti,Al)N-coating system after use in cutting tests of a case hardening steel, showed that it could withstand the thermomechanical stress at selected cutting parameters. Neither delamination of the coating nor phase transformation was observed. Investigation of WHIPOX-material sintered at 1200 °C showed the existence of small, below 100 nm in size, Y-stabilized ZrO2-nanoparticles homogeneously dispersed within the Al2O3-matrix. Moreover it showed that the ZrO2-particles got into the matrix during preparation and that they could be found between Al2O3-matrix grains and between fibre-matrix grains and therefore could influence the sintering activity. This presumption was confirmed by the result that ZrO2-free prepared WHIPOX-samples showed higher sintering activities than ZrO2-containing samples. Furthermore the sintering activity was enhanced by increasing the sintering temperature to 1300 °C.