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The development of in-memory computing hardware components based on different types of resistive materials is an active research area. These materials usually exhibit analog memory states originating from a wide range of physical mechanisms and offer rich prospects for their integration in artificial neural networks. The resistive states are classified as either non-volatile or volatile, and switching occurs when the material properties are triggered by an external stimulus such as temperature, current, voltage, or electric field. The non-volatile resistance state change is typically achieved by the switching layer’s local redox reaction that involves both electronic and ionic movement. In contrast, a volatile change in the resistance state arises due to the transition of the switching layer from an insulator to a metal. Here, we demonstrate volatile resistive switching in twinned LaAlO3 onto which strained thin films of La0.67Sr0.33MnO3 (LSMO) are deposited. An electric current induces phase transition that triggers resistive switching, close to the competing phase transition temperature in LSMO, enabled by the strong correlation between the electronic and magnetic ground states, intrinsic to such materials. This phase transition, characterized by an abrupt resistance change, is typical of a metallic to insulating behavior, due to Joule heating, and manifested as a sharp increase in the voltage with accompanying hysteresis. Our results show that such Joule heating-induced hysteretic resistive switching exhibits different profiles that depend on the substrate texture along the current path, providing an interesting direction toward new multifunctional in-memory computing devices.

This work deals with the synthesis of hole-doped La1-xSrxMnO3 (x = 0.25 and 0.33) perovskite via two different ways, namely a solid-state reaction method and a sol-gel process. Various properties of the samples have been investigated and compared by means of different techniques, namely X-ray diffraction (XRD), temperature-dependent resistivity measurements in the temperature range 25-300 K using a closed cycle refrigerator and vibrating sample magnetometry (VSM). All samples have orthorhombic crystal symmetry and an irregular variation in unit-cell volume with increase in Sr content. The average crystallite size was determined from the XRD data and found to lie in the range 19-22 nm. Metal-insulator transitions (MIT) were observed in all the samples via low-temperature electrical characterisations. The magnetic measurements confirm that the magnetisation does not saturate for the 25% Sr doped samples up to the available field of 10 kOe. The magnetic response also supports the interpretation of XRD and resistivity data. The obtained results are explained on the basis of double-exchange and super-exchange mechanisms. [ABSTRACT FROM AUTHOR]

We propose a novel static random access memory (SRAM) cell employing correlated material (CM) films in conjunction with the transistors to achieve higher read stability, write ability, and energy efficiency. The design of the proposed SRAM cell utilizes orders of magnitude difference in the resistance of the insulating and metallic phases of the CM to mitigate the design conflicts. By appropriately controlling the phase transitions in the CM films during SRAM operation through device–circuit codesign, we achieve 30% higher read static noise margin and 36% increase in the write margin over standard SRAM. The proposed design also leads to a 50% reduction in the leakage current due to high insulating state of the CM. This is achieved at 28% read time penalty. We also discuss the layout implications of our technique and present techniques to sustain no area overhead. [ABSTRACT FROM PUBLISHER]