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This paper presents a micromachined micro-g capacitive accelerometer with a silicon-based spring-mass sensing element. The displacement changes of the proof mass are sensed by an area-variation-based capacitive displacement transducer that is formed by the matching electrodes on both the movable proof mass die and the glass cover plate through the flip-chip packaging. In order to implement a high-performance accelerometer, several technologies are applied: the through-silicon-wafer-etching process is used to increase the weight of proof mass for lower thermal noise, connection beams are used to reduce the cross-sensitivity, and the periodic array area-variation capacitive displacement transducer is applied to increase the displacement-to-capacitance gain. The accelerometer prototype is fabricated and characterized, demonstrating a scale factor of 510 mV/g, a noise floor of 2 µg/Hz1/2 at 100 Hz, and a bias instability of 4 µg at an averaging time of 1 s. Experimental results suggest that the proposed MEMS capacitive accelerometer is promising to be used for inertial navigation, structural health monitoring, and tilt measurement applications.

The. [ABSTRACT FROM AUTHOR]

A high-sensitivity, low-noise in-plane (lateral) capacitive silicon microaccelerometer utilizing a combined surface and bulk micromachining technology is reported. The accelerometer utilizes a 0.5-mm-thick, 2.4 × 1.0 mm² proof-mass and high aspect-ratio vertical polysilicon sensing electrodes fabricated using a trench refill process. The electrodes are separated from the proof- mass by a 1.1-µm sensing gap formed using a sacrificial oxide layer. The measured device sensitivity is 5.6 pF/g. A CMOS readout circuit utilizing a switched-capacitor front-end Σ - Δ modulator operating at 1 MHz with chopper stabilization and correlated double sampling technique, can resolve a capacitance of 10 aF over a dynamic range of 120 dB in a 1 Hz BW. The measured input referred noise floor of the accelerometer-CMOS interface circuit is 1.6µg/√Hz in atmosphere. [ABSTRACT FROM AUTHOR]

This paper presents a micromachined micro-g capacitive accelerometer with a silicon-based spring-mass sensing element. The displacement changes of the proof mass are sensed by an area-variation-based capacitive displacement transducer that is formed by the matching electrodes on both the movable proof mass die and the glass cover plate through the flip-chip packaging. In order to implement a high-performance accelerometer, several technologies are applied: the through-silicon-wafer-etching process is used to increase the weight of proof mass for lower thermal noise, connection beams are used to reduce the cross-sensitivity, and the periodic array area-variation capacitive displacement transducer is applied to increase the displacement-to-capacitance gain. The accelerometer prototype is fabricated and characterized, demonstrating a scale factor of 510 mV/g, a noise floor of 2 µg/Hz1/2 at 100 Hz, and a bias instability of 4 µg at an averaging time of 1 s. Experimental results suggest that the proposed MEMS capacitive accelerometer is promising to be used for inertial navigation, structural health monitoring, and tilt measurement applications. [ABSTRACT FROM AUTHOR]