1. Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
- Author
-
Anna Reszka, Szymon Grzanka, Robert Czernecki, Vaclav Holy, Grzegorz Targowski, Marcin Sarzyński, Mike Leszczynski, Hiroshi Amano, Shugo Nitta, Zhibin Liu, and Ewa Grzanka
- Subjects
Photoluminescence ,Materials science ,chemistry.chemical_element ,Substrate (electronics) ,Epitaxy ,lcsh:Technology ,Article ,vapor phase epitaxy ,Perpendicular ,General Materials Science ,Growth rate ,multicolor emitters ,lcsh:Microscopy ,Quantum well ,lcsh:QC120-168.85 ,InGaN ,lcsh:QH201-278.5 ,business.industry ,lcsh:T ,Wavelength ,quantum wells ,chemistry ,lcsh:TA1-2040 ,Optoelectronics ,lcsh:Descriptive and experimental mechanics ,patterned substrate ,lcsh:Electrical engineering. Electronics. Nuclear engineering ,business ,lcsh:Engineering (General). Civil engineering (General) ,lcsh:TK1-9971 ,Indium - Abstract
InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µ, m and their height was 4 and 1 µ, m. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored. InGaN wells grown on the stripes made in the direction parallel to the GaN substrate off-cut had a step-flow-like morphology. For these samples (grown at low temperatures), we found out that the InGaN growth rate was higher for the narrower stripes. The higher growth rate induces a higher indium incorporation and a longer wavelength emission in photoluminescence measurements. This phenomenon is very clear for the 4 µ, m high stripes and less pronounced for the shallower 1 µ, m high stripes. The dependence of the emission wavelength on the stripe width paves a way to multicolor emitters.
- Published
- 2019