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2. Nanoscale Investigation of the Effect of Annealing Temperature on the Polarization Switching Dynamics of Hf0.5Zr0.5O2 Thin Films.

3. Grain-size adjustment in Hf0.5Zr0.5O2 ferroelectric film to improve the switching time in Hf0.5Zr0.5O2-based ferroelectric capacitor.

4. Nanoscale Investigation of the Effect of Annealing Temperature on the Polarization Switching Dynamics of Hf0.5Zr0.5O2 Thin Films

5. Highly Enhanced Polarization Switching Speed in HfO2‐based Ferroelectric Thin Films via a Composition Gradient Strategy.

6. Damage-Induced Ferroelectricity in HfO x -Based Thin Film.

7. Grain-size adjustment in Hf 0.5 Zr 0.5 O 2 ferroelectric film to improve the switching time in Hf 0.5 Zr 0.5 O 2 -based ferroelectric capacitor.

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