1. A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs
- Author
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Alberto Bosio, Patrick Girard, Aida Todri-Sanial, Luigi Dilillo, Ken Mackay, João Azevedo, Arnaud Virazel, Jérémy Alvarez-Hérault, TEST (TEST), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Smart Integrated Electronic Systems (SmartIES), and CROCUS Technology
- Subjects
nonvolatile memories (NVM) ,Magnetic switching ,Magnetic domain ,Computer science ,hypothetical 16 word TAS-MRAM architecture ,02 engineering and technology ,MRAM devices ,01 natural sciences ,Magnetization ,Magnetic separation ,thermally assisted switching (TAS)-MRAM ,Heating ,double-cell faulty behavior ,high-integration density ,test ,Hardware_GENERAL ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,resistive-open defects ,read and write operation ,Electrical and Electronic Engineering ,Magnetic tunneling ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,complete resistive-open defect analysis ,magnetic random access memory ,010302 applied physics ,Magnetic domains ,spintronics ,Resistive touchscreen ,Magnetoresistive random-access memory ,Random access memory ,thermally assisted switching MRAM ,Hardware_MEMORYSTRUCTURES ,Spintronics ,020202 computer hardware & architecture ,electrical simulation ,Hardware and Architecture ,universal on-chip memory ,Fault modeling ,Switches ,Software ,Word (computer architecture) - Abstract
International audience; Magnetic random access memory (MRAM) is an emerging technology with potential to become the universal on-chip memory. Among existing MRAM technologies, thermally assisted switching (TAS)-MRAM technology offers several advantages compared with other technologies: selectivity, single magnetic field, and high-integration density. In this paper, we analyze the impact of resistive-open defects on TAS-MRAM behavior. Electrical simulations were performed on a hypothetical 16 word TAS-MRAM architecture enabling any combination of read and write operations. Results show that read and write sequences may be affected by resistive-open defects that may induce single and double-cell faulty behaviors. As a next step, we will exploit the analyses results to guide the test phase by providing effective test algorithms targeting faults related to actual defects affecting TAS-MRAM architectures.
- Published
- 2014
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