244 results on '"van Houdt, Jan"'
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2. Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor
3. Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification
4. Alternative explanation for the steep subthreshold slope in Ferroelectric FETs
5. Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants
6. Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility
7. Compact Modeling and Design Exploration of Non-Destructive Read-Out 1T1C FeRAM
8. A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs
9. Understanding the impact of La dopant position on the ferroelectric properties of hafnium zirconate
10. Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory
11. Evaluating the Effects of FeFET Device Variability on Charge Sharing Based AiMC Accelerator
12. Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch
13. Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors
14. Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor
15. Polarity‐Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition
16. Capacitive Memory Window with Non-Destructive Read in Ferroelectric Capacitors
17. Comprehensive understanding of charge lateral migration in 3D SONOS memories
18. Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO 2 Metal-Ferroelectric-Metal Memory.
19. Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification
20. Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode
21. High-k gadolinium and aluminum scandates for hybrid floating gate NAND flash
22. RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application
23. Demonstration of 64 Conductance States and Large Dynamic Range in Si-doped HfO2 FeFETs under Neuromorphic Computing Operations
24. High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition
25. Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors
26. Linking EUV lithography line edge roughness and 16 nm NAND memory performance
27. Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors
28. Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunities
29. Charge-based nonvolatile memory: Near the end of the roadmap?
30. Strain and ferroelectricity in wurtzite ScxAl1−xN materials
31. Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor
32. Ferroelectric La-Doped ZrO2/HfxZr1-xO2 Bilayer Stacks with Enhanced Endurance
33. Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage
34. A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing
35. Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET’s
36. Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap Memory
37. Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia
38. Physical understanding and modeling of SANOS retention in programmed state
39. Ferroelectric La‐Doped ZrO 2 /HfxZr1− xO 2 Bilayer Stacks with Enhanced Endurance
40. Identifying alternative ferroelectric materials beyond Hf(Zr)O2
41. Profiling of traps in SiO 2/Al 2O 3 gate stack by the charge pumping technique
42. Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges
43. A Novel Dual Ferroelectric Layer Based MFMFIS FeFET with Optimal Stack Tuning toward Low Power and High-Speed NVM for Neuromorphic Applications
44. Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices
45. Embedded HIMOS (R) flash memory in 0.35 mu m and 0.25 mu m CMOS technologies
46. High-k Materials for Tunnel Barrier Engineering in Floating-Gate Flash Memories
47. Highly Scaled Poly-Silicon Channel Vertical SONOS Cell for Ultra High Density NAND Technology
48. Strain and ferroelectricity in wurtzite ScxAl1−xN materials.
49. Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor.
50. Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications
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