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We report the impact of base size and shape on the evolution control of multifaceted InP (100) nanopyramids grown by selective area metal organic vapor phase epitaxy. The pyramid top surfaces are composed of a (100) center facet surrounded by high-index {103} and {115} facets. Their arrangement and (relative) size depend on the size and shape of the pyramid top area. For a certain shape, only the (100) facet remains below a critical size of the top area. The arrangement and (relative) size of the top facets in turn are governed by the {110} and {111} side facets whose area (ratio) depends on the pyramid base size and shape. This self-consistently determines the ratio of the (100) top facet area and the sum of the {110} and {111} side facet areas as well as the height of the pyramids. [ABSTRACT FROM AUTHOR]

A detailed analysis to extend the emission wavelength of InAs/InP nanostructures is presented employing InAs quantum dots (QDs), InAs quantum wells (QWs), and a combination of InAs QDs and QWs grown on InGaAsP/InP (100) by metal organic vapor phase epitaxy. First the optimized growth conditions of InAs QDs are established and an emission wavelength of 2.16 μm is achieved by capping with strain reducing InGaAs layers. Second, InAs QWs are grown under metal-stable conditions with the longest emission wavelength of 2.26 μm for a 4 nm QW. Finally, a combined InAs QDs on QW structure is realized. The InAs QD density is drastically increased on the QW and the longest emission wavelength of 2.46 μm is obtained at 6 K from sparse huge QDs. These findings open routes to extend the emission wavelength in the InAs/InP materials system beyond 2.4 μm using InAs QDs on QW structures. [ABSTRACT FROM AUTHOR]

The impact base size and shape on the evolution control of multifaceted InP (100) nanopyramids grown by selective area metal organic vapor phase epitaxy is examined. The studies have determined the ratio of the (100) top facet area and the sum of the {110} and {111} side facet areas as well as the height of the pyramids.

In the past decade, metal hole arrays have been studied intensively in the context of extraordinary optical transmission (EOT). Recently it was shown that surface plasmons on optically pumped hole arrays can show laser action. So far, however, it is not demonstrated that the optical transmission of these arrays can also be increased using gain. In this Letter, we present a dramatic increase of the EOT via loss compensation of surface plasmons, accompanied by spectral narrowing of the resonance. These experiments allow us to quantify the modal gain experienced by the surface plasmon. Interestingly, the transmission minimum of the Fano-resonance becomes smaller. [ABSTRACT FROM AUTHOR]

We report continuous wave lasing operation at T=260 K of subwavelength-metallic-cavities with semiconductor core encapsulated in silver under electric injection. The physical cavity volumes of the two lasers presented are 0.96λ3 (λ=1563.4 nm) and 0.78λ3 (λ=1488.7 nm), respectively. Longitudinal modes observed in one of lasers correspond to the Fabry-Perot cavity in the length direction. Such record high temperature operation of a subwavelength laser is of great importance for the development of small light sources in future integrated photonic circuits and other on-chip applications. [ABSTRACT FROM AUTHOR]

Distribution control of InAs quantum dots (QDs) on truncated InP pyramids by selective area growth is reported. The top surface of the pyramids is composed of a (100) facet and high-index facets aside. The arrangement of the facets is governed by the shape of the pyramid base and top surface area. The QDs preferentially nucleate on the high-index facets determining position and distribution. The QD number is reduced with shrinking top surface size. Positioning of four, three, two, and single QDs is realized depending on the top surface’s shape and size. Emission from single QDs is observed at 1.55 μm. [ABSTRACT FROM AUTHOR]