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The authors present continuous wave (CW) high‐power broad area and ridge waveguide lasers with laser emission at 626 nm at room temperature. For this, the authors employ GaAs‐based diode lasers in the AlGaInP system for laser emission at 626 nm at room temperature. The laser structure is grown on three‐inch wafers by metal organic vapour phase epitaxy. Broad area and ridge waveguide lasers are fabricated. Pulsed broad area laser characterisation on bar level shows laser operation at 20 C heat sink temperature. The authors measured peak lasing wavelengths as short as 625 nm and total maximum output power of both facets up to 1.4 W at an injection current of 2 A. Both, broad area and ridge waveguide lasers show laser operation and CW excitation at room temperature. The ridge waveguide lasers emit output powers of over 90 mW at 626 nm at a maximum injection current of 200 mA with a nearly diffraction‐limited beam profile. [ABSTRACT FROM AUTHOR]

Waveguide lasers have the advantages of miniature and compact structure and have broad application prospects in photonic integration and on–chip laboratories. The development of femtosecond laser direct–writing technology makes the processing of transparent materials more flexible and controllable. This paper mainly introduces a waveguide laser based on femtosecond laser direct–writing technology. Firstly, the applications of femtosecond laser direct–writing technology in an optical waveguide are introduced, including the principles of femtosecond laser direct–writing technology, common optical wave scanning methods, and types of optical waveguides. After that, we summarize the development of a waveguide continuous–wave laser, a Q–switched laser and a mode–locked laser from visible to mid–infrared wavebands and analyze some new representative work. Finally, we explain the difficulty of compensating for dispersion in pulse waveguide lasers and summarize some new ideas that have been proposed to solve the problem. [ABSTRACT FROM AUTHOR]

InP-based edge-emitting O-band lasers are integrated onto silicon photonics circuit employing micro-transfer printing technology. Blocks of unpatterned InP gain material of typical size 1000 × 60 μ m2 are first transferred onto 400 nm thick silicon rib waveguides with the fabrication steps performed on the target wafer to realize the final lasers. As a result, the InP ridge waveguides are aligned with lithographic accuracy to the underlying Si waveguides resulting in an approach free from any misalignment stemming from the transfer printing process. The fabricated Distributed Bragg Reflector laser shows lasing around 100 mA current injection with minimum 1 mW of output power coupled to a single mode fiber. This integration method paves a reliable route toward scaling-up the integration of active devices such as lasers, modulators, and detectors on 300-mm diameter silicon wafers, which requires high-uniformity across the wafer. [ABSTRACT FROM AUTHOR]

We report on a mid-infrared erbium planar waveguide laser operating on the 4I11/2 → 4I13/2 transition. It employs a heavily doped 10.6 at. % Er3+:LiYF4 single-crystalline layer grown by liquid-phase epitaxy. The waveguide laser delivers a maximum output power of 191 mW at ∼2809 nm with a slope efficiency of 15%, a linear polarization, and a laser threshold of 134 mW. The waveguide propagation losses are 0.4 ± 0.2 dB/cm. The polarized spectroscopic properties of the Er3+:LiYF4 layers are also investigated. The stimulated-emission cross section of Er3+ ions amounts to 0.87 × 10−20 cm2 at 2809 nm for π-polarization. Er3+:LiYF4 epitaxial layers represent a promising platform for integrated low-loss mid-infrared light sources. [ABSTRACT FROM AUTHOR]

Herein, a YAG/10 at% Yb:YAG/YAG transparent ceramic planar waveguide (PWG) gain medium has been molded via inkjet printing and dry pressing molding. The composition and rheological property of ink are optimized along with the printing process to enhance the printing accuracy and quality. The PWG has dimensions of 13.5 × 8.0 × 1.8 mm3, while the thickness of the core Yb:YAG layer is ≈190 μm. The in‐line transmittance of the PWG reaches 81.7% at 1030 nm, and the average grain size is ≈2.3 μm. The diffusion characteristics of Yb ions across the interface between the cladding YAG layer and the core Yb:YAG layer are investigated by calculating the diffusion coefficient and the mean diffusion distance of 172Yb ions. The Yb:YAG PWG oscillator, which is pumped from a single end by a 940 nm laser diode, produces continuous wave laser at a wavelength of 1030 nm and exhibits the highest power (3.8 W) and highest absorbed–output slope efficiency (64.6%). [ABSTRACT FROM AUTHOR]

Integrated photonics is a cutting-edge field that merges optics and electronics on a single microchip, revolutionizing how we manipulate and transmit light. Imagine traditional bulky optical systems condensed onto a chip smaller than a fingernail, enabling faster communication, more efficient sensors, and advanced computing. At its core, integrated photonics relies on guiding light through waveguides etched onto semiconductor substrates, analogous to how wires conduct electricity in traditional electric circuits. These waveguides can route, modulate, and detect light signals with unprecedented precision and speed. This technology holds immense promise across various domains. Despite its immense potential, integrated photonics faces challenges, including manufacturing complexities and integration with existing electronic systems. However, ongoing research and advancements continue to push the boundaries, promising a future where light-based technologies seamlessly integrate into our everyday lives, powering a new era of innovation and connectivity. [ABSTRACT FROM AUTHOR]

We study the optical field generated by nanoemitters incorporated in a three‐dimensional percolation system, where the probability p of pore occupation is well above the threshold value p ≫ 0.318. In the proposed system, the pores are randomly distributed in a cubic grid, and the radii of the pores are adjusted by the Gaussian distribution. Maxwell's equations in conjunction with the four‐level laser equations are applied to the proposed random medium. The finite‐difference time‐domain algorithm (FDTD) is used to obtain the field pattern and optical modes within the system. We show that the number of optical modes increases with the size of the system, thus contributing to cylindrical symmetric geometries that guide the light beam in a particular direction. Confinement in one direction could be used as a random laser waveguide, with some characteristics similar to those of conventional lasers. [ABSTRACT FROM AUTHOR]

A stability analysis of two modes of generation in semiconductor quantum well lasers is performed. These modes correspond to two solutions of the rate equations obtained by taking into account the internal optical loss that depends on the density of charge carriers injected into the laser waveguide region and, hence, on the injection current. It is shown that, in contrast to the first ("conventional") mode of generation, which is always stable and hence observable, the second ("additional") mode, which is entirely due to the internal loss that depends on the carrier density, is unstable and hence cannot be observed under the steady-state conditions in the laser structure considered in this work. [ABSTRACT FROM AUTHOR]

Buried depressed-cladding waveguides were fabricated in 0.7-at.% Nd:Ca3Li0.275Nb1.775Ga2.95O12 (Nd:CLNGG) and 7.28-at.% Yb:CLNGG disordered laser crystals grown by Czochralski method. Circular waveguides with 100 μm diameters were inscribed in both crystals with picosecond (ps) laser pulses at 532 nm of 0.15 μJ energy at 500 kHz repetition rate. A line-by-line writing technique at 1 mm/s scanning speed was used. Laser emission at 1.06 μm (with 0.35 mJ pulse energy) and at 1.03 μm (with 0.16 mJ pulse energy) was obtained from the waveguide inscribed in Nd:CLNGG and Yb:CLNGG, respectively, employing quasi-continuous wave pumping with fiber-coupled diode lasers. The waveguide realized in RE3+-doped CLNGG crystals using ps-laser pulses at high repetition rates could provide Q-switched or mode-locked miniaturized lasers for a large number of photonic applications. [ABSTRACT FROM AUTHOR]

Semiconductor lasers, characterized by their high efficiency, small size, low weight, rich wavelength options, and direct electrical drive, have found widespread application in many fields, including military defense, medical aesthetics, industrial processing, and aerospace. The mode characteristics of lasers directly affect their output performance, including output power, beam quality, and spectral linewidth. Therefore, semiconductor lasers with high output power and beam quality are at the forefront of international research in semiconductor laser science. The novel parity–time (PT) symmetry mode-control method provides the ability to selectively modulate longitudinal modes to improve the spectral characteristics of lasers. Recently, it has gathered much attention for transverse modulation, enabling the output of fundamental transverse modes and improving the beam quality of lasers. This study begins with the basic principles of PT symmetry and provides a detailed introduction to the technical solutions and recent developments in single-mode semiconductor lasers based on PT symmetry. We categorize the different modulation methods, analyze their structures, and highlight their performance characteristics. Finally, this paper summarizes the research progress in PT-symmetric lasers and provides prospects for future development. [ABSTRACT FROM AUTHOR]

The laser generation characteristics of microdisc lasers with optically coupled waveguide operating in continuous wave mode at elevated temperatures are investigated. Laser generation and waveguide effect at temperatures up to 92.5°C were demonstrated. The measured characteristic temperature of microlasers was 65 K in the range of 25–92.5°C. [ABSTRACT FROM AUTHOR]

In this work, the ridge waveguide was formed by the femtosecond laser ablation with a central wavelength of 0.808 μm and a speed of 50 μm/s on the planar Nd3+‐doped fluorophosphate glass waveguide that was fabricated by the C3+ ion implantation with an energy of 6.0 MeV and a fluence of 1.0×1012 C3+s/mm2. The mechanism of the ion‐implanted waveguide was discussed by the Stopping and Range of Ions in Matter 2013. The cross‐section morphology of the ridge waveguide was captured by an optical microscope. Its mode characteristics were analyzed by the end‐face coupling method. The ridge Nd3+‐doped fluorophosphate glass waveguides have potential as fundamental structures for many optoelectronic devices including waveguide amplifiers and lasers. [ABSTRACT FROM AUTHOR]

In this paper, we report the use of femtosecond radially polarized vortex laser with MHz repetition rate for direct writing of cladding waveguides (WGs) and realization of waveguide laser oscillations in ytterbium-doped calcium fluoride crystal. The negative refractive index modification in Yb:CaF2 crystal is fabricated by the homemade all-fiber laser amplifier. At 976 nm pump wavelength, these Yb:CaF2 WGs can achieve continuous-wave (CW) laser oscillation. The length of resonant cavity is 4 mm, and the minimum laser threshold is 116 mW, corresponding to the propagation loss of 0.85 dB/cm, the center wavelength of 1045.2 nm, and the maximum output power of 91 mW. In addition, a saturable absorber mirror (SAM) was prepared by depositing ReS0.8Se1.2 on the reflective surface of a dichroic mirror to realize Q-switched waveguide laser output. The output Q-switched pulses with a tunable repetition rate in the range of 125–692.5 kHz, and the shortest pulse duration is 513 ns. [ABSTRACT FROM AUTHOR]

Owing to the narrow bandgap and excellent optoelectronic properties, III‐Sb nanowires (NWs) enable efficient optical response from near‐infrared to mid‐infrared, making them ideal candidates for broadband optical modulation. Herein, high‐purity GaSb NWs with controlled density are prepared on the transparent substrates of glasses. The phase purity and crystallinity of as‐prepared GaSb NWs are verified by X‐ray diffraction. Z‐scan and I‐scan techniques are adopted to investigate the nonlinear optical modulation properties, displaying a high modulation depth of 40% (at 1 μm wavelength) for the GaSb NWs with growth time of 30 min. Furthermore, the as‐prepared GaSb NWs are used as the saturable absorber elements in a waveguide laser cavity, demonstrating efficient Q‐switched mode‐locked lasers with a repetition rate of 8.2 GHz and a pulse duration of 31 ps (operating at 1 μm wavelength). All results show the great potential of GaSb NWs for the ultrafast laser and nonlinear optical applications. [ABSTRACT FROM AUTHOR]

Integrated photonics is a cutting-edge field that merges optics and electronics on a single microchip, revolutionizing how we manipulate and transmit light. Imagine traditional bulky optical systems condensed onto a chip smaller than a fingernail, enabling faster communication, more efficient sensors, and advanced computing. At its core, integrated photonics relies on guiding light through waveguides etched onto semiconductor substrates, analogous to how wires conduct electricity in traditional electric circuits. These waveguides can route, modulate, and detect light signals with unprecedented precision and speed. This technology holds immense promise across various domains. Despite its immense potential, integrated photonics faces challenges, including manufacturing complexities and integration with existing electronic systems. However, ongoing research and advancements continue to push the boundaries, promising a future where light-based technologies seamlessly integrate into our everyday lives, powering a new era of innovation and connectivity.

We demonstrate integrated on-chip erbium-doped tellurite (TeO2:Er3+) waveguide lasers fabricated on a wafer-scale silicon nitride platform. A 0.352-µm-thick TeO2:Er3+ coating was deposited as an active medium on 0.2-µm-thick, 1.2- and 1.6-µm-wide, and 22-mm-long silicon nitride waveguides with sidewall-patterned asymmetrical distributed Bragg reflector cavities. The lasers yield efficiencies between 0.06 and 0.36%, lasing threshold ranging from 13 to 26 mW, and emission within the C-band (1530–1565 nm). These results establish new opportunities for this hybrid tellurite glass–silicon nitride platform, such as the co-integration of passive components and light sources in the telecom window, and provide the foundation for the development of efficient, compact, and high-output-power on-chip erbium-doped tellurite waveguide lasers. [ABSTRACT FROM AUTHOR]

Silicon photonics is becoming a competitive technology to settle the issues of power and speed in data centers and computing systems. However, the absence of an on‐chip light source restricts the wide and deep application of silicon photonics. Essentially, efficient edge coupling from a Si‐based III‐V laser to silicon photonic components remains the major obstacle for on‐chip integration. Here, two compact edge couplers with ultra‐low coupling loss and eased fabrication for the light transmission from a Si‐based III‐V laser to Si3N4 waveguide are realized. An ultra‐low laser‐to‐chip coupling loss of only 1.175 dB for the butt coupling of a Si‐based InAs QD laser is experimentally demonstrated with high alignment tolerance. The strategies presented here provide a competitive solution for realizing ultra‐efficient integration of Si‐based light sources and silicon photonic components. [ABSTRACT FROM AUTHOR]

Buried depressed-cladding waveguides were fabricated in 0.7-at.% Nd:Ca3Li0.275Nb1.775Ga2.95O12 (Nd:CLNGG) and 7.28-at.% Yb:CLNGG disordered laser crystals grown by Czochralski method. Circular waveguides with 100 μm diameters were inscribed in both crystals with picosecond (ps) laser pulses at 532 nm of 0.15 μJ energy at 500 kHz repetition rate. A line-by-line writing technique at 1 mm/s scanning speed was used. Laser emission at 1.06 μm (with 0.35 mJ pulse energy) and at 1.03 μm (with 0.16 mJ pulse energy) was obtained from the waveguide inscribed in Nd:CLNGG and Yb:CLNGG, respectively, employing quasi-continuous wave pumping with fiber-coupled diode lasers. The waveguide realized in RE3+-doped CLNGG crystals using ps-laser pulses at high repetition rates could provide Q-switched or mode-locked miniaturized lasers for a large number of photonic applications.

An experimental technique for measuring internal optical loss in high-power edge-emitting semiconductor lasers is demonstrated. The technique is based on coupling a probe beam into the waveguide of a pulse-pumped laser diode. It allows measuring free-carrier absorption (FCA) in a laser heterostructure at different temperatures and at pump current levels up to 30 kA/cm2. Measurement results are presented for two laser heterostructure designs, which vary in the waveguide doping level and material. For both heterostructures, the pump current increase induces a significant rise in FCA and a corresponding increase in internal optical loss, from 0.4–0.7 cm−1 at the threshold current to 2–2.5 cm−1 at 15 kA/cm2. At higher temperatures, the dependence is even stronger and the internal optical loss rises to 6 cm−1 (65 °C, 27 kA/cm2). The gradient of the FCA current dependence is lower for the laser heterostructure with a doped GaAs waveguide, while the heterostructure with an undoped AlGaAs waveguide displays a larger increase in FCA but better internal quantum efficiency at high currents. These results show that the proposed experimental method has significant potential. [ABSTRACT FROM AUTHOR]

Smart nano -composites Phospho-silicate (SiO 2 –P 2 O 5) prepared in monolith form containing 16 mol% P 2 O 5 , and doped with different mol% of Er3+ ions between 0.5 and 5 mol%; the composite has been synthesized by Sol-Gel technique, and subsequently annealed at 850 °C. X-ray diffraction patterns show the structural properties of the mentioned prepared samples, giving rise to the crystallite sizes to increase in a range between 18, and 20.8 nm as the molar percent of the Er3+ ion increase from 0% to 5%. The morphology, and surface morphology of the prepared samples were characterized using TEM, and FESEM, respectively. The Raman analyses show that the active Raman bands are corresponding to silicate, and phosphate. These bands were enveloped by the strong asymmetric vibrations of Er 2 O 3 at 420, and 840 cm−1, their Bose-Einstein corrected intensities increased gradually by increasing the Er3+ ions concentration in the regions from 3400 up to 3450 cm−1, and 3550 up to 3700 cm−1. The optical studies show that the refractive index increased by increasing Er3+ ions concentration, from 1.7 up to 1.8 for as the concentration of Er3+ ions increase. The photoluminescence are exhibiting an emission with splitting at 1545, and 1555 nm, which is related to the intra 4F transition. It has been found that the optimal doping content of Er is 1 mol% then, after quenching caused by OH groups in Er3+ ions doped Phospho-silicate at higher concentrations. It is obviously that 1 mol% of Erbium ions is a suitable candidate for photonic applications such as Laser waveguide, and optical amplifier. [ABSTRACT FROM AUTHOR]

We report the comparative investigation of fabricating type-II waveguide lasers in Nd:Y3Al5O12 (Nd:YAG) using femtosecond laser pulses at 515 and 1030 nm. We focus on the comparison in track morphologies, modification thresholds, and the overall efficiency of the ultrafast laser inscription (ULI) process in creating these waveguides. For both wavelengths, we demonstrated low propagation losses of 0.2 dB/cm. We achieved the lowest reported lasing threshold of 9 mW in a Nd:YAG waveguide laser. Superior performance was achieved with the 1030-nm ULI source, yielding a slope efficiency over 40% and achieving a lasing threshold at half the value observed for the 515-nm source. [ABSTRACT FROM AUTHOR]

Chimera states are rich and fascinating phenomena existing in many networks, where the identical oscillators self-organize into spatially separated coexisting domains of coherent and incoherent oscillations. Here, we report these states in the large laterally coupled laser array with four different waveguiding structures, with which a variety of chimera patterns can be revealed. We present the bifurcation diagrams giving birth to them and find that the chimeras exist in the boundary of the steady state and multi-period oscillation solutions, which applies to all the prevalent waveguiding structures considered. We also find that the waveguiding structures play an important role in the chimera states, e.g., the array composed of the index antiguiding with gain-guiding has a wider chimera region compared to other waveguides considered. Additionally, the effects of the crucial parameters including the laser separation ratio, pump rate, frequency detuning, and linewidth enhancement factor on the observed phenomena are discussed. Our analysis shows that the frequency detuning between lasers and the linewidth enhancement factor affects the lifetime and pattern of chimeras. The results could guide the design of laser arrays or introduce more insight into a new understanding of the dynamical behaviors of networks. [ABSTRACT FROM AUTHOR]

Threshold properties and pulsed output of AlGaInP visible-emitting lasers with an asymmetric waveguide structure and a bulk active layer are analysed. The effects of the current leakage, increased by the heating of the laser due to the proximity of the electrical pulse source and the Joule heating in and around this source are analysed. When optimising the laser design, waveguiding properties of the bulk active layer are shown to be important, leading to threshold currents decreasing, and injection efficiency increasing, with active layer thickness in lasers with moderately thick (< 0.1 μm) active layers. [ABSTRACT FROM AUTHOR]

The high intensities reached today by powerful lasers enable us to explore the interaction with matter in the relativistic regime, unveiling a fertile domain of modern science that is pushing far away the frontiers of plasma physics. In this context, refractive-plasma optics are being utilized in well established wave guiding schemes in laser plasma accelerators. However, their use for spatial phase control of the laser beam has never been successfully implemented, partly due to the complication in manufacturing such optics. We here demonstrate this concept which enables phase manipulation near the focus position, where the intensity is already relativistic. Offering such flexible control, high-intensity high-density interaction is becoming accessible, allowing for example, to produce multiple energetic electron beams with high pointing stability and reproducibility. Cancelling the refractive effect with adaptive mirrors at the far field confirms this concept and furthermore improves the coupling of the laser to the plasma in comparison to the null test case, with potential benefits in dense-target applications. Intense laser interaction with matter creates plasma which can act as a nonlinear optical medium. Here the authors demonstrate plasma as a refractive optics for relativistic intensity radiation, evident by the acceleration of multiple electron beams from a single laser pulse passing through the plasma. [ABSTRACT FROM AUTHOR]

In this contribution, we apply adaptive finite elements to the Boussinesq model. Adaptivity is achived with goal‐oriented error control and local mesh refinement. The principle goal is motivated from laser material processing and laser waveguide writing in which material starts to flow due to laser‐induced heat generation. Flow of the material is decribed by the Boussinseq equations. Our model is substantiated with some numerical tests in order to show the capacities of our adaptive numerical schemes. [ABSTRACT FROM AUTHOR]

In this work, we present the operation of a femtosecond-laser-written diode-pumped visible waveguide laser based on praseodymium-doped lithium lutetium fluoride. The refractive index modification induced by the femtosecond laser in the crystal exhibits an anisotropic behavior, thus enabling the fabrication of different types of waveguides from single-track structures to stress-induced waveguides and depressed cladding structures. All the waveguides were characterized by realizing transmission measurements and the waveguide design was optimized to obtain extremely low propagation losses, equal to 0.12 d B / c m. Lasing has been achieved at 604 n m and 721 n m from different waveguides. In addition, stable continuous-wave lasing at 698 n m has been obtained in a depressed cladding waveguide. This wavelength corresponds to the one needed for the transition of the atomic clock based on the neutral strontium atom. In the end, we report the observation of laser emission at 645 n m from a depressed cladding waveguide. [ABSTRACT FROM AUTHOR]

Traditional laser diodes operating at 650 nm are more prone to high-order mode excitation, resulting in poorer beam quality. In this paper, we designed GaInP–AlGaInP laser diodes (LD) with a 650 nm range and a trench mode-modulation structure based on the structure of edge-emitting laser (EEL) diodes. The effect of the three-trench structure was investigated theoretically and experimentally. The right trench structure laser chips demonstrated good beam quality while maintaining a high power output. An electro-optical conversion efficiency of 56% was demonstrated with a slope efficiency of 1.32 W/A at a 40 mA current. The maximum optical output power reached 40.8 mW. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) ternary transition-metal dichalcogenides (TMDCs) are of great research interest because their superior layer-dependent optical modulation properties. In this work, three different kinds of TMDC nanosheets, including hafnium diselenide (HfSe2), titanium diselenide (TiSe2) and zirconium diselenide (ZrSe2), are prepared by liquid phase exfoliation (LPE) technique. The high-quality material properties of these TMDC nanosheets are confirmed by Raman spectroscopy and X-ray diffraction analysis. Furthermore, the bandgap information of five-layer MSe2 has been investigated via utilizing density functional theory. The calculation results exhibit ultra-narrow bandgap structure (lower than 1.1 eV) for all these three materials, indicating that MSe2 is suitable for broadband photonic applications. By applying the fabricated MSe2 as saturable absorbers, high-performance Q-switched mode-locked laser operation has been realized. The laser gain media are Nd:GdVO4 cladding waveguides fabricated by femtosecond laser direct writing. As a result, the pulsed waveguide lasers are able to deliver approximately 6-GHz laser pulses with a signal-to-noise ratio of over 45 dB. The minimum pulse width is determined to be as short as 26 ps. The results demonstrated in this work exhibit the great potential of TMDCs and waveguide structures in applications of pulsed lasers with compact footprints.

The recent development of perovskite-based lasers showcased the outstanding optical properties of the material such as high absorption coefficient and high quantum yield. The lasers were demonstrated in the form of nanowires and nanoplates, which are difficult to be integrated on a chip in the form of high-density arrays due to the difficulties in positioning them on the chip. The solution to this problem should be to use the well-known lithography process in the fabrication process of the lasers. In this work, we demonstrate several perovskite-based plasmonic lasers that were fabricated by using the lithographic in-mold patterning method that relies on the electron beam lithography process. The lasers utilized CsPbBr3 perovskite nanocrystals as the gain material and plasmonic distributed Bragg reflector grating structure as the optical feedback provider to achieve a low lasing threshold of 42.5 μJ/cm2 with a linewidth of 0.6 nm (FWHM) at room temperature. The use of the lithographic process in the fabrication of the lasers makes it possible to fabricate and integrate them on a chip in a relatively high-density manner, so that they can be used extensively in quantum optics and on-chip integrated photonics applications. [ABSTRACT FROM AUTHOR]

The modulation of light within microscopic devices is the key to designing versatile and powerful photonic integrated circuits (PICs). Contemporary techniques are able to generate a wide range of waveguiding and waveforming elements. They are implemented by the etching of trenches, laser induced waveguide writing, and many other techniques. However, most of the fabricated structures feature a static waveguiding behavior that remains unaltered after processing the devices. In this work, we demonstrate the simulation, design, and experimental behavior of truly switchable microscopic waveguides. We demonstrate the presence of waveguiding and forming elements by localized heating, leading to a tunable refractive index profile in GaAs based devices. We give insights into the microscopic behavior by multi-physics simulations in the mechanical, thermal, and optical domains. This approach opens the way to further possibilities in the design of PICs and useful modifications within existing diode laser and amplifier setups. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) carbides of transition metals, so called "MXenes", maintain excellent optical properties and unique layer stacking form via hydrogen bonds in contrast to other low-dimensional materials. These promising features have attracted increasingly research interest in the field of ultrafast photonics. In this work, titanium carbide (Ti3C2Tx) and tantalum carbide (Ta4C3Tx), as two promising MXene materials for photonic applications, are experimentally synthesized by the ultrasound-assisted liquid phase exfoliation technique. The morphology of prepared few-layer Ti3C2Tx and Ta4C3Tx has been systematically characterized by transmission electron microscopy and X-ray diffraction analysis. Density functional theory is performed to obtain their electronic band structures, demonstrating metallic properties and verifying their optical absorption at 1 μm. Their tempting optical modulation properties for multi-gigahertz pulsed laser emission are demonstrated by using them as saturable absorbers in a waveguide laser cavity. Particularly, high-performance Q-switched mode-locked lasers with/without laser mirrors are realized based on the hybrid waveguide laser configuration, delivering 1 μm laser pulses with durations as short as 30 ps. The results presented in this work show the great potential of metallic MXenes and waveguide structures for applications in functional photonic devices. [ABSTRACT FROM AUTHOR]

A readily configurable and scalable 2 µm laser source with multi-channel/wavelength fiber output could be advantageous to 2 µm applications such as spectral-beam combination or fiber communications. We report the first experimental realization and characterization of a two-channel holmium-doped zirconium fluoride glass waveguide array laser pumped by a single thulium fiber laser at 1945 nm. Specific laser wavelengths are selected by fiber Bragg gratings (2076.7 nm and 2074.4 nm), and single channel powers of >100 mW are achieved. Design and assembly details, and considerations for future improvements are discussed, including the potential extension to and beyond a 12 channel source. [ABSTRACT FROM AUTHOR]

GaSb-based single-transverse-mode narrow ridge waveguide (RW) lasers with high power and simultaneous good beam quality have broad application prospects in the mid-infrared wavelength region. Yet its design and formation have not been investigated systematically, while the beam characteristics that affect their suitability for specific applications remain rarely analyzed and optimized. The present work addresses these issues by theoretically establishing a waveguide parameter domain that generalizes the overall possible combinations of ridge widths and etch depths that support single-transverse-mode operation for GaSb-based RW lasers. These results are applied to develop two distinct and representative waveguide designs derived from two proposed major optimization routes of model gain expansion and index-guiding enhancement. The designs were evaluated experimentally based on prototype 1-mm cavity-length RW lasers in the 1950 nm wavelength range, which were fabricated with waveguides having perpendicular ridge and smooth side-walls realized through optimized dry etching conditions. The model gain expanded RW laser design with a relatively shallow-etched (i.e., 1.55 μ m) and wide ridge (i.e., 7 μ m) yielded the highest single-transverse-mode power to date of 258 mW with a narrow lateral divergence angle of 11.1 ∘ full width at half maximum at 800 mA under room-temperature continuous-wave operation, which offers promising prospects in pumping and coupling applications. Meanwhile, the index-guiding enhanced RW laser design with a relatively deeply etched (i.e., 2.05 μ m) and narrow ridge (i.e., 4 μ m) provided a highly stable and nearly astigmatism-free fundamental mode emission with an excellent beam quality of M 2 factor around 1.5 over the entire operating current range, which is preferable for seeding external cavity applications and complex optical systems. [ABSTRACT FROM AUTHOR]

A new insight into capillary channel formation with a high aspect ratio in the translucent matter by nanosecond UV laser pulses is discussed based on our experiments on KrF laser multi-pulse drilling of polymethyl methacrylate and K8 silica glass. The proposed mechanism includes self-consistent laser beam filamentation along a small UV light penetration depth caused by a local refraction index increase due to material densification by both UV and ablation pressure, followed by filamentation-assisted ablation. A similar mechanism was shown to be realized in highly transparent media, i.e., KU-1 glass with a multiphoton absorption switched on instead of linear absorption. Waveguide laser beam propagation in long capillary channels was considered for direct electron acceleration by high-power laser pulses and nonlinear compression of excimer laser pulses into the picosecond range. [ABSTRACT FROM AUTHOR]

Symmetric narrow waveguide structure has been developed and fabricated to achieve low beam divergence and improved coupling performance of the 1.95 μm GaSb-based single-transverse-mode diode lasers. The near-field expansion effect of the narrowed 150 nm vertical waveguide design leads to a reduced fast-axis beam divergence of 44.2° full width at half maximum (FWHM) as well as 62% single-mode fiber (SMF) coupling efficiency, which has 55% relative promotion compared to the 40% efficiency of the conventional 270 nm waveguide design with 60.4° FWHM. The highest SMF coupling power of 113 mW was obtained by the 210 nm narrow waveguide lasers with lower internal optical loss at a 55% coupling efficiency, which performed balanced optimal performance with a narrowed divergence of 53.4° and a relatively high optical power of 206 mW. The high coupling efficiency and power will provide more promising prospects for the GaSb-based single-transverse-mode lasers in the widespread fiber-based and external-cavity applications. [ABSTRACT FROM AUTHOR]

[Display omitted] • The graphene-based van der Waals heterostructures are selected to enhance the light-matter interaction and improve the mid-infrared (MIR) optical modulation capability in multilayer semimetal PtSe 2 and metallic-like ReSe 2. The graphene layer can accelerate the electron-hole recombination process necessary for optical switching recovery time and optimize the saturated absorption performance of multilayer PtSe 2 /ReSe 2 in the 2-μm region. After combining with the waveguide laser system, the stable Q -switched laser operation at 1.9 μm has been established, paving the way for on-chip integration of MIR pulsed laser sources. Mid-infrared (MIR) ultrafast photonics has received significant interest due to the development of compact and robust MIR laser sources capable of emitting wavelengths beyond 2 μm. Transition metal selenides (TMSes), with the properties of feasibly tunable bandgaps, desirable photocarrier transmission property, and broadband nonlinear optical response, have become a research focus on ultrafast photonic applications. However, the relatively large bandgap (around 1 eV) of the TMSes greatly restricts their applications in the MIR region. Here, the synergetic interaction between multilayer graphene (Gr) and semimetal or metallic-like (PtSe 2 and ReSe 2) is employed to tune the optical properties and to further optimize the optical performance of TMSes in the MIR region. Benefiting from the ultrafast photocarrier relaxation time, appropriate modulation depth, and almost zero non-saturated loss of Gr-PtSe 2 and Gr-ReSe 2 heterostructures, stable Q -switched laser operation at 1.9 μm has been achieved in an integrated design based on waveguide laser platform. The results demonstrate that combining the semimetal or metallic-like TMSes with van der Waals (vdW) heterostructures is a promising strategy to extend the photonic applications of TMSes into the MIR region, indicating the potential applications of graphene-based TMSes vdW heterostructures for MIR integrated photonics. [ABSTRACT FROM AUTHOR]

We are delighted to present this Special Issue of "Advancements in Semiconductor Lasers", which features a remarkable collection of 14 papers that explore the diverse and cutting-edge aspects of semiconductor lasers. The first section of this Special Issue presents advancements in understanding the underlying determinism of semiconductor lasers, and a new method to distinguish chaotic regimes in a semiconductor laser with feedback is presented. Bian et al. proposed a simple method using mutually coupled free-running VCSELs to generate broadband polarization chaos [[9]], while the locking map of a semiconductor laser under the injection of a frequency comb was studied [[10]]. [Extracted from the article]

The design of a single-mode interband cascade laser (ICL) using a slotted waveguide is presented. This technique was explored as an inexpensive alternative to distributed feedback lasers since standard photolithography can be used in fabrication and complex techniques, such as e-beam lithography, re-growth steps, and/or metal gratings, can be avoided. The design of slotted waveguides must be carefully simulated before fabrication to ensure the efficacy of the photolithography masks with each ICL growth. Limitations and the behavior of key design parameters are discussed. Single-mode emission was achieved for certain temperature and injected current conditions, validating the operation of an Sb based slotted laser. The slotted ICLs were emitting from a single longitudinal mode at 3.5 μm and 2 mW of power per facet output at 20 °C with threshold currents around 80 mA. [ABSTRACT FROM AUTHOR]

Featured Application: Silicon photonics. In recent years, silicon photonics has achieved great success in optical communication area. More and more on-chip optoelectronic devices have been realized and commercialized on silicon photonics platform, such as silicon-based modulators, filters and detectors. However, on-chip light sources are still not achieved because that silicon is an indirect bandgap material. To solve this problem, the rare earth element erbium (Er) is considered, which emits light covering 1.5 μm to 1.6 μm and has been widely used in fiber amplifiers. Compared to Er-doped fiber amplifiers (EDFA), the Er ion concentration needs to be more than two orders higher for on-chip Er-based light sources due to the compact size integration requirements. Therefore, the choice of the host material is crucially important. In this paper, we review the recent progress in on-chip Er-based light sources and the advantages and disadvantages of different host materials are compared and analyzed. Finally, the existing challenges and development directions of the on-chip Er-based light sources are discussed. [ABSTRACT FROM AUTHOR]

Four-mode multiplexing and manipulation technologies are reviewed in the context of space-division multiplexing (SDM) optical communication systems. These are multiplane light conversion (MPLC), fused fiber devices, such as photonic lanterns and tapered fiber bundles, 3-D waveguides fabricated using ultrafast laser inscription, and free-space imaging systems. Each device has its unique strengths and use cases. MPLC can create very complex transformations between two arbitrary sets of spatial modes and leverages mature gray-scale lithographic techniques. Photonic lanterns and tapered fiber bundles are all-fiber devices that can convert beams on single-mode fiber inputs into spatial modes. The all-fiber construction leads to very low losses and high-power handling. 3-D waveguides are inscribed into a glass block using ultrashort lasers and can arbitrarily route light in 3-D. Finally, free-space systems using lenses can also relay many multicore and multimode beams through a single free-space device, such as a thin film filter or an optical isolator. These four technologies have enabled hero transmission experiments in the multimode, multicore, and multimode fiber. [ABSTRACT FROM AUTHOR]

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We simulate the optical coupling between $2.3\ {\boldsymbol{\mu m}}$ GaSb-based diode lasers (DLs) epitaxially grown on on-axis silicon (001) and passive waveguides in the butt-coupling geometry. 3D FDTD simulations reveal how the optical coupling is affected by the air gap between the laser cavity and the waveguide that arises from the laser etched-facet definition. We also model alternative approaches consisting in filling the gap with higher-refractive index materials transparent in the mid-infrared window. Finally, because of their fabrication flexibility, we propose to implement polymeric waveguides in order to achieve improved coupling performances. [ABSTRACT FROM AUTHOR]

We report a $D$ -band waveguide diplexer, with two passbands of 130–134 and 151.5–155.5 GHz, fabricated using micro laser sintering (MLS) additive manufacturing with stainless steel. This is the first demonstration of metal 3-D printing technology for multiport filtering devices at a sub-terahertz (THz) frequency. For comparison, the same diplexer design has also been implemented using computer numerical controlled (CNC) milling. The diplexer, designed using coupling matrix theory, employs an all-resonator and $E$ -plane split-block structure. The two channels are folded for compactness. A staircase coupled structure is used in one channel to increase the isolation performance. The printed waveguide flanges are modified to adapt to the limited printing volume from the MLS. Effects of fabrication tolerance on the diplexer are investigated. An effective and unconventional electroless plating process is developed. The measured average insertion losses of the gold-coated diplexer are 1.31 and 1.37 dB, respectively. The respective frequency shifts from design values are 0.92% and 1.1%, and bandwidth variations are 4% and 15%. From a comprehensive treatment of the end-to-end manufacturing process, the work demonstrates MLS to be a promising fabrication technique for complex waveguide devices at a sub-THz frequency range. [ABSTRACT FROM AUTHOR]

Reconfigurable waveguide components are promising building blocks for photonic neural networks and as an optical analogue to field-programmable gate arrays. By changing the effective index of the waveguide, reconfigurable waveguide components can achieve on-chip light routing and modulation. In this paper, we design and demonstrate an Sb2S3-reconfigurable InP membrane Machâ€"Zehnder interferometer (MZI) on a silicon substrate. Sb2S3, which has tunable refractive index and low absorption in the near-infrared spectrum, was patterned on the InP waveguide MZIs to make an optical switch in the telecoms conventional-band. By laser induced crystallisation of the Sb2S3, it was possible to control interference in the MZI and achieve 18 dB on/off switching at 1540 nm. Laser reamorphisation and reversible switching of the Sb2S3 layer resulted in damage to the waveguide structure. However, simulations show that transition metal di-chalcogenide two-dimensional crystal layers can act as efficient thermal barriers that prevent thermal damage to the waveguide during laser amorphisation. Therefore, combining Sb2S3 with InP waveguides seems to be a feasible approach to achieve low-loss reprogrammable waveguide components for on-chip photonics routing and neural networks. [ABSTRACT FROM AUTHOR]

The integration of stabilized lasers, sources that generate spectrally pure light, will provide compact, low-cost solutions for applications including quantum information sciences, precision navigation and timing, metrology, and high-capacity fiber communications. We report a significant advancement in this field, demonstrating stabilization of an integrated waveguide Brillouin laser to an integrated waveguide reference cavity, where both resonators are fabricated using the same CMOS-compatible integration platform. We demonstrate reduction of the free running Brillouin laser linewidth to a 292 Hz integral linewidth and carrier stabilization to a 4.9 × 10−13 fractional frequency at 8 ms reaching the cavity-intrinsic thermorefractive noise limit for frequencies down to 80 Hz. We achieve this level of performance using a pair of 56.4 × 106 quality factor Si3N4 waveguide ring-resonators that reduce the high-frequency noise by the nonlinear Brillouin process and the low-frequency noise by Pound–Drever–Hall locking to the ultra-low loss resonator. These results represent an important step toward integrated stabilized lasers with reduced sensitivity to environmental disturbances for atomic, molecular, and optical physics (AMO), quantum information processing and sensing, and other precision scientific, sensing, and communications applications. [ABSTRACT FROM AUTHOR]