Defect reduction in semipolar {1013} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth.

MLA

Jiankun Yang, et al. “Defect Reduction in Semipolar {1013} GaN Grown on M-Sapphire via Two-Step Nanoepitaxial Lateral Overgrowth.” CrystEngComm, vol. 16, no. 21, June 2014, pp. 4562–67. EBSCOhost, https://doi.org/10.1039/c3ce42663g.

APA

Jiankun Yang, Tongbo Wei, Ziqiang Huo, Yonghui Zhang, Qiang Hu, Xuecheng Wei, Baojuan Sun, Ruifei Duan, & Junxi Wang. (2014). Defect reduction in semipolar {1013} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth. CrystEngComm, 16(21), 4562–4567. https://doi.org/10.1039/c3ce42663g

Chicago

Jiankun Yang, Tongbo Wei, Ziqiang Huo, Yonghui Zhang, Qiang Hu, Xuecheng Wei, Baojuan Sun, Ruifei Duan, and Junxi Wang. 2014. “Defect Reduction in Semipolar {1013} GaN Grown on M-Sapphire via Two-Step Nanoepitaxial Lateral Overgrowth.” CrystEngComm 16 (21): 4562–67. doi:10.1039/c3ce42663g.