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Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures.
- Source :
-
Journal of Applied Physics . 2014, Vol. 116 Issue 23, p234508-1-234508-7. 7p. 1 Black and White Photograph, 1 Chart, 9 Graphs. - Publication Year :
- 2014
-
Abstract
- GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates which were characterized by powder X-ray diffraction, field emission scanning electron microscopy, and photoluminescence. The current-voltage characteristics of the GaN nanorods on Si (111) heterojunction were obtained from 138 to 493K which showed the inverted rectification behavior. The I-V characteristics were analyzed in terms of thermionic emission model. The temperature variation of the apparent barrier height and ideality factor along with the non-linearity of the activation energy plot indicated the presence of lateral inhomogeneities in the barrier height. The observed two temperature regimes in Richardson's plot could be well explained by assuming two separate Gaussian distribution of the barrier heights. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 116
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 100097320
- Full Text :
- https://doi.org/10.1063/1.4904749