Cite
Transient and Thermal Analysis on Disturbance Immunity for 4 \mathrmF^2 Surrounding Gate 1T-DRAM With Wide Trenched Body.
MLA
Lin, Jyi-Tsong, et al. “Transient and Thermal Analysis on Disturbance Immunity for 4 \mathrmF^2 Surrounding Gate 1T-DRAM With Wide Trenched Body.” IEEE Transactions on Electron Devices, vol. 62, no. 1, Jan. 2015, pp. 61–68. EBSCOhost, https://doi.org/10.1109/TED.2014.2372789.
APA
Lin, J.-T., Lin, P.-H., Haga, S. W., Wang, Y.-C., & Lu, D.-R. (2015). Transient and Thermal Analysis on Disturbance Immunity for 4 \mathrmF^2 Surrounding Gate 1T-DRAM With Wide Trenched Body. IEEE Transactions on Electron Devices, 62(1), 61–68. https://doi.org/10.1109/TED.2014.2372789
Chicago
Lin, Jyi-Tsong, Po-Hsieh Lin, Steve W. Haga, Yu-Chun Wang, and Dai-Rong Lu. 2015. “Transient and Thermal Analysis on Disturbance Immunity for 4 \mathrmF^2 Surrounding Gate 1T-DRAM With Wide Trenched Body.” IEEE Transactions on Electron Devices 62 (1): 61–68. doi:10.1109/TED.2014.2372789.