Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging.

We present a method based on steady state photoluminescence (PL) imaging and modelling of the PL intensity profile across a grain boundary (GB) using 2D finite element analysis, to quantify the recombination strength of a GB in terms of the effective surface recombination velocity (Seff). This quantity is a more meaningful and absolute measure of the recombination activity of a GB compared to the commonly used signal contrast, which can strongly depend on other sample parameters, such as the intra-grain bulk lifetime. The method also allows the injection dependence of the Seff of a given GB to be explicitly determined. The method is particularly useful for studying the responses of GBs to different cell processing steps, such as phosphorus gettering and hydrogenation. The method is demonstrated on double-side passivated multicrystalline wafers, both before and after gettering, and single-side passivated wafers with a strongly non-uniform carrier density profile depth-wise. Good agreement is found between the measured PL profile and the simulated PL profile for both cases. We demonstrate that single-side passivated wafers allow more recombination active grain boundaries to be analysed with less unwanted influence from nearby features. The sensitivity limits and other practical constraints of the method are also discussed. [ABSTRACT FROM AUTHOR]