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Atomic-layer-deposited WN[sub x]C[sub y] thin films as diffusion barrier for copper metallization.
- Source :
-
Applied Physics Letters . 6/23/2003, Vol. 82 Issue 25, p4486. 3p. 2 Diagrams, 2 Graphs. - Publication Year :
- 2003
-
Abstract
- The properties of WN[SUBx]C[SUBy] films deposited by atomic layer deposition (ALD) using WF[SUB6], NH[SUB3], and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm[SUP3]. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ∼ 48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC[SUB1-x] and β-W[SUB2]N with an equiaxed microstructure. The barrier property of this ALD-WN[SUBx]C[SUBy] film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min. [ABSTRACT FROM AUTHOR]
- Subjects :
- *COPPER diffusion rate
*TRANSMISSION electron microscopy
*SPECTROMETRY
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 82
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 10024432
- Full Text :
- https://doi.org/10.1063/1.1585111