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Integrating high-k dielectrics: etched polysilicon or metal gates?

Authors :
Schram, Tom
Beckx, Stephan
De Gendt, Stefan
Vertommen, Johan
Lee, Steve
Source :
Solid State Technology. Jun2003, Vol. 46 Issue 6, p61. 3p.
Publication Year :
2003

Abstract

Assesses the compatibility of dielectric layers with conventional polysilicon gate electrodes. Use of standard processing equipment; Power capacity; Level of performance.

Subjects

Subjects :
*DIELECTRICS
*SILICON
*ELECTRODES
*ELECTRIC capacity

Details

Language :
English
ISSN :
0038111X
Volume :
46
Issue :
6
Database :
Academic Search Index
Journal :
Solid State Technology
Publication Type :
Academic Journal
Accession number :
10026282

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