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Radial InP/InAsP/InP heterostructure nanowires on patterned Si substrates using self-catalyzed growth for vertical-type optical devices.
- Source :
-
Applied Physics Letters . 1/1/2015, Vol. 106 Issue 1, p1-4. 4p. 2 Black and White Photographs, 2 Graphs. - Publication Year :
- 2015
-
Abstract
- Radial InP/InAsP/InP heterostructure nanowires (NWs) on SiO2-mask-pattered Si substrates were reported using self-catalyzed InP NWs. Self-catalyzed growth was performed using low growth temperatures and high group-III flow rates, and vertical InP NWs were formed on the mask openings. The diameter and tapering of the self-catalyzed InP NWs were controlled by the introduction of HCl and H2S gases during the NW growth, and InP NWs that have a straight region with decreased diameter were formed. Radial InP/InAsP/InP quantum wells (QWs) were grown on the sidewall of the vertical InP NWs on Si substrates. Room-temperature photoluminescence of single NWs from the QW was clearly observed, which exhibited the potential of building blocks for vertical-type optical devices on Si substrates. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 106
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 100416761
- Full Text :
- https://doi.org/10.1063/1.4905555