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Characterization and Enhancement of High-Voltage Cascode GaN Devices.

Authors :
Huang, Xiucheng
Liu, Zhengyang
Lee, Fred C.
Li, Qiang
Source :
IEEE Transactions on Electron Devices. Feb2015, Vol. 62 Issue 2, p270-277. 8p.
Publication Year :
2015

Abstract

Gallium nitride (GaN) devices are gathering momentum, with a number of recent market introductions for a wide range of applications such as point-of-load converters, OFF-line switching power supplies, battery chargers, and motor drives. This paper studies the basic characteristics of a 600 V cascode GaN switch, such as voltage distribution during the turn-ON and turn-OFF transition. The switching loss mechanism of the cascode GaN switch is analyzed in detail, including the impact of the package parasitic inductance in both hard- and soft-switching modes. A soft-switching 5 MHz boost converter is developed and shows the advantages and the potential of the cascode GaN. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
62
Issue :
2
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
100608420
Full Text :
https://doi.org/10.1109/TED.2014.2358534