Back to Search
Start Over
Characterization and Enhancement of High-Voltage Cascode GaN Devices.
- Source :
-
IEEE Transactions on Electron Devices . Feb2015, Vol. 62 Issue 2, p270-277. 8p. - Publication Year :
- 2015
-
Abstract
- Gallium nitride (GaN) devices are gathering momentum, with a number of recent market introductions for a wide range of applications such as point-of-load converters, OFF-line switching power supplies, battery chargers, and motor drives. This paper studies the basic characteristics of a 600 V cascode GaN switch, such as voltage distribution during the turn-ON and turn-OFF transition. The switching loss mechanism of the cascode GaN switch is analyzed in detail, including the impact of the package parasitic inductance in both hard- and soft-switching modes. A soft-switching 5 MHz boost converter is developed and shows the advantages and the potential of the cascode GaN. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 100608420
- Full Text :
- https://doi.org/10.1109/TED.2014.2358534