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Novel Designed SiC Devices for High Power and High Efficiency Systems.
- Source :
-
IEEE Transactions on Electron Devices . Feb2015, Vol. 62 Issue 2, p382-389. 8p. - Publication Year :
- 2015
-
Abstract
- Two types of 4H-silicon carbide (SiC) MOSFETs are proposed in this paper. One is the novel designed V-groove trench MOSFET that utilizes the 4H-SiC (0-33-8) face for the channel region. The MOS interface using this face shows the extremely low interface state density (<italic/> D\mathrm {\mathbf {it}} ) of 3\times 10^11 \mathrmcm^-2~\mathrmeV^-1 , which causes the high channel mobility of 80 \mathrmcm^2~\mathrmV^-1~\mathrms^-1 results in very low channel resistance. The buried p+ regions located close to the trench bottom can effectively alleviate the electric field crowding without the significant sacrifice of the increase of the resistance. The low specific ON-state resistance of 3.5 m \Omega ~\mathrmcm^\mathrm \mathbf 2 with sufficiently high blocking voltage of 1700 V is obtained. The other is the double implanted MOSFET with the carefully designed junction termination extension and field-limiting rings for the edge termination region, and the additional doping into the junction FET region. With a high-quality and high-uniformity epitaxial layer, 6 mm $\times 6$ mm devices are fabricated. The well balanced specific ON-state resistance of 14.2 m \Omega ~\mathrm{cm}^{2} and the blocking voltage of 3850 V are obtained for 3300 V application. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 100608432
- Full Text :
- https://doi.org/10.1109/TED.2014.2362537