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Efficiency Evaluation of the Modular Multilevel Converter Based on Si and SiC Switching Devices for Medium/High-Voltage Applications.

Authors :
Wu, Liyao
Qin, Jiangchao
Saeedifard, Maryam
Wasynczuk, Oleg
Shenai, Krishna
Source :
IEEE Transactions on Electron Devices. Feb2015, Vol. 62 Issue 2, p286-293. 8p.
Publication Year :
2015

Abstract

The modular multilevel converter (MMC) is the most promising converter topology for medium- and high-power applications. One of the main concerns in the operation of the MMC, particularly for high-power applications, is its efficiency, which should be maximized. Silicon Carbide (SiC)-based devices have the potential to provide significant efficiency improvement compared with silicon devices. However, the possibility and impact of using SiC-based devices instead of silicon devices for high-power conversion have not been thoroughly explored. This paper reports on the results obtained from a detailed study to evaluate the performance of MMCs based on medium-voltage SiC MOSFETs and diodes with hybrid MMCs that employ silicon IGBTs and SiC diodes. The results are based on detailed circuit simulations that use simple physics-based circuit models. The study suggests the potential for significant efficiency gain for MMCs based on SiC power devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
62
Issue :
2
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
100608445
Full Text :
https://doi.org/10.1109/TED.2014.2375875