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Electric Field and Interface Charge Extraction in Field-Plate Assisted RESURF Devices.
- Source :
-
IEEE Transactions on Electron Devices . Feb2015, Vol. 62 Issue 2, p622-629. 8p. - Publication Year :
- 2015
-
Abstract
- A methodology for extracting the lateral electric field ( \boldsymbol E\boldsymbol {x} ) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 100608471
- Full Text :
- https://doi.org/10.1109/TED.2014.2383360