Synthesis and Characterization of Monodispersed β-Ga2O3Nanospheres via Morphology Controlled Ga4(OH)10SO4Precursors.

To our best knowledge, monodispersedβ-Ga2O3nanospheres were successfullysynthesized for first time via morphology-controlled gallium precursorsusing the forced hydrolysis method, followed by thermal calcinationprocesses. The morphology and particle sizes of the gallium precursorswere strongly dependent on the varying (R= SO42–/NO3–) concentrationratios. As Rdecreased, the size of the preparedgallium precursors decreased and morphology was altered from sphereto rod. The synthesized S2 (R= 0.33) consists ofuniform and monodispersed amorphous nanospheres with diameters ofabout 200 nm. The monodispersed β-Ga2O3nanospheres were synthesized using thermal calcination processesat various temperatures ranging from 500 to 1000 °C. Monodispersedβ-Ga2O3nanospheres (200 nm) consist ofsmall particles of approximately 10–20 nm with rough surfaceat 1000 °C for 1 h. The UV (375 nm) and broad blue (400–450nm) emission indicate recombination via a self-trapped exciton andthe defect band emission. Our approach described here is to show theexploration of β-Ga2O3nanospheres asan automatic dispersion, three-dimensional support for fabricationof hierarchical materials, which is potentially important for a broadrange of optoelectronic applications. [ABSTRACT FROM AUTHOR]