Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1−xAs/GaAs1−yPy superlattice on vicinal substrates.

MLA

Fujii, Hiromasa, et al. “Low-Temperature MOVPE Using TEGa for Suppressed Layer Undulation in InxGa1−xAs/GaAs1−yPy Superlattice on Vicinal Substrates.” Journal of Crystal Growth, vol. 414, Mar. 2015, pp. 3–9. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2014.10.043.

APA

Fujii, H., Sodabanlu, H., Sugiyama, M., & Nakano, Y. (2015). Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1−xAs/GaAs1−yPy superlattice on vicinal substrates. Journal of Crystal Growth, 414, 3–9. https://doi.org/10.1016/j.jcrysgro.2014.10.043

Chicago

Fujii, Hiromasa, Hassanet Sodabanlu, Masakazu Sugiyama, and Yoshiaki Nakano. 2015. “Low-Temperature MOVPE Using TEGa for Suppressed Layer Undulation in InxGa1−xAs/GaAs1−yPy Superlattice on Vicinal Substrates.” Journal of Crystal Growth 414 (March): 3–9. doi:10.1016/j.jcrysgro.2014.10.043.