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Comparative Study of a Single Inverter Bridge for Dual-Frequency Induction Heating Using Si and SiC MOSFETs.

Authors :
Esteve, Vicente
Jordan, Jose
Sanchis-Kilders, Esteban
Dede, Enrique J.
Maset, Enrique
Ejea, Juan B.
Ferreres, Agustin
Source :
IEEE Transactions on Industrial Electronics. Mar2015, Vol. 62 Issue 3, p1440-1450. 11p.
Publication Year :
2015

Abstract

The induction surface hardening of parts with nonuniform cylindrical shape requires a multifrequency process in order to obtain a uniform surface hardened depth. This paper presents an induction heating high power supply composed by a single inverter circuit and a specially designed output resonant circuit. The whole circuit supplies simultaneously both medium- and high-frequency power signals to the heating inductor. An initial study is made to select the most appropriated topology for this application. The resonant output circuit is analyzed, and a design procedure is presented. The selected inverter operation is described and simulated. Simulations are experimentally verified on a 10-kW dual-frequency resonant inverter operating at 10 and 100 kHz using MOSFETs of silicon (Si) and silicon carbide (SiC) technology. A comparative study is presented based on the measurements of power losses and the energy efficiency of the inverter using both types of MOSFETs. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
02780046
Volume :
62
Issue :
3
Database :
Academic Search Index
Journal :
IEEE Transactions on Industrial Electronics
Publication Type :
Academic Journal
Accession number :
100949067
Full Text :
https://doi.org/10.1109/TIE.2014.2359411